EMB9 / UMB9N / IMB9A
Transistors
General purpose
(dual digital transistors)
EMB9 / UMB9N / IMB9A
Features
1) Two DTA144Ys in a EMT or UMT or SMT package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
External dimensions
(Unit : mm)
EMB9
0.22
(4)
(5)
(6)
(3)
(2)
1.2
1.6
(1)
0.13
Each lead has same dimensions
ROHM : EMT6
Structure
Epitaxial planar type
PNP silicon transistor (Built-in resistor type)
Abbreviated symbol : B9
0.65
1.3
0.65
0.8
1.1
0.95 0.95
1.9
2.9
0.7
0.9
(4)
(3)
UMB9N
0.2
0.5
0.5 0.5
1.0
1.6
2.0
(6)
(5)
1.25
The following characteristics apply to both DTr
1
and
DTr
2
.
2.1
0.15
0.1Min.
0to0.1
Each lead has same dimensions
Equivalent circuit
EMB9 / UMB9N
(3) (2) (1)
R
1
R
2
DTr
1
R
1
=10kΩ
R
2
=47kΩ
DTr
2
R
2
R
1
(4) (5)
DTr
2
R
2
R
1
(3) (2)
ROHM : UMT6
EIAJ : SC-88
IMB9A
(4) (5) (6)
R
1
R
2
DTr
1
R
1
=10kΩ
R
2
=47kΩ
(1)
Abbreviated symbol : B9
IMB9A
(6)
0.3
(4)
(5)
(6)
1.6
2.8
0.15
0.3to0.6
0to0.1
Each lead has same dimensions
Absolute maximum ratings
(Ta = 25°C)
Parameter
Supply voltage
Input voltage
Symbol
V
CC
V
IN
I
O
I
C (Max.)
Pd
Tj
Tstg
Limits
−50
−40
6
Output current
EMB9, UMB9N
Power
dissipation IMB9A
Junction temperature
Storage temperature
−70
−100
150 (TOTAL)
300 (TOTAL)
150
−55
to
+150
mA
∗
1
Unit
V
V
ROHM : SMT6
EIAJ : SC-74
Abbreviated symbol : B9
mW
˚C
˚C
∗
2
∗
1 120mW per element must not be exceeded.
∗
2 200mW per element must not be exceeded.
(3)
(2)
(1)
(1)
(2)
1/2
EMB9 / UMB9N / IMB9A
Transistors
Electrical characteristics
(Ta = 25°C)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
Symbol
V
I (off)
V
I (on)
V
O (on)
I
I
I
O (off)
G
I
f
T
R
1
R
2
/ R
1
Min.
−
−1.4
−
−
−
68
−
7
3.7
Typ.
−
−
−0.1
−
−
−
250
10
4.7
Max.
−0.3
−
−0.3
−0.88
−0.5
−
−
13
5.7
Unit
V
V
mA
µA
−
MHz
kΩ
−
Conditions
V
CC
=
−5V,
I
O
=
−100µA
V
O
=
−0.3V,
I
O
=
−1mA
I
O
/I
I
=
−5mA/−0.25mA
V
I
=
−5V
V
CC
=
−50V,
V
I
=0V
V
O
=
−5V,
I
O
=
−5mA
V
CE
=
−10mA,
I
E
=5mA,
f=100MHz
−
−
∗
∗
Transition frequency of the device
Packaging specifications
Package
Code
Type
EMB9
UMB9N
IMB9A
Basic ordering
unit (pieces)
T2R
8000
Taping
TN
3000
T148
3000
Electrical characteristic curves
−100
−50
V
O
=−0.3V
−10m
−5m
−2m
V
CC
=−5V
1k
500
V
O
=−5V
Ta=100˚C
25˚C
−40˚C
INPUT VOLTAGE : V
I (on)
(V)
OUTPUT CURRENT : Io
(A)
−20
−10
−5
−2
−1
DC CURRENT GAIN : G
I
−1m
200
100
50
20
10
5
2
1
−500µ
−200µ
−100µ
−50µ
−20µ
−10µ
−5µ
−2µ
Ta=−40˚C
25˚C
100˚C
Ta=100˚C
25˚C
−40˚C
−500m
−200m
−100m
−100µ −200µ −500µ −1m
−2m
−5m −10m −20m −50m −100m
−1µ
0
−0.5
−1
−1.5
−2
−2.5
−3
−100µ −200µ −500µ −1m
−2m
−5m −10m −20m −50m−100m
OUTPUT CURRENT : I
O
(A)
INPUT VOLTAGE : V
I (off)
(V)
OUTPUT CURRENT : I
O
(A)
Fig.1 Input voltage vs. output current
(ON characteristics)
Fig.2 Output current vs. input voltage
(OFF characteristics)
Fig.3 DC current gain vs. output
current
−
1000m
l
O
/l
I
=20
−
500m
OUTPUT VOLTAGE : V
O (on)
(V)
−
200m
−
100m
−
50m
−
20m
−
10m
−
5m
−
2m
−
1m
−100µ −200µ −500µ −1m
Ta=100˚C
25˚C
−40˚C
−2m
−5m −10m −20m −50m−100m
OUTPUT CURRENT : I
O
(A)
Fig.4 Output voltage vs. output
current
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