,
One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
BC177,8,9
BC257,8,9
.BC307,8,9
BC320,1,2
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
THE ABOVE TYPES ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL
SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS,
BC177, 8, 9 are complementary to BC107, 8, 9.
BC257, 8, 9 are complementary to BC167, 8, 9.
BC307, 8, 9 are complementary to BC237, 8, 9.
BC320, 1, 2 are complementary to BC317, 8, 9.
TO-18
CASE
TO-92B
TO-92F
TO-92A
CBS
ECB
BC257,8,9
CEB
SSC
BC177,8,9
ABSOLUTE MAXIMUM RATINGS
TYPE
BC307,8,9
BC320
f
l,2
-VCBO
(v)
50
-VCES
(v)
50
30
25
50
30
25
50
30
25
-VCEO
(v)
45
-VEBO
(v)
5
5
5
5
5
5
5
5
6
5
5
-IC(DC)
(mA)
100
100
100
100
100
100
100
100
100
p
tot
*
Tjt T
8
tg
(mW)
300
300
300
300
300
300
300
300
300
310
310
BC177
BC178
BC179
BC257
BC258
BC259
3C307
BCJ08
3C309
BC320
BC321
BC322
*
30
25
25
20
-55 to 175°C
50
30
25
50
30
25
45
25
20
-55 to 150°C
45
25
20
-55 to 150°C
50
45
30
45
30
20
2°C
150
150
150
-55 to 150°C
310
Tstal Power Dissipation
®
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Informat.on hirnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
3IjP6TRICAL CHARACTERISTICS
PARAMETER
(TA=25°C
unless otherwise noted)
SYMBOL
-BVCBO
-LVCEO *
-BVEBO
Note 1
MIN
TYP
MAX
UNIT
TEST CONDITIONS
-IC=10uA
-IC=2mA
-lE-ljiA
lE-0
IB-O
Ic-0
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Smitter-Base Breakdown Voltage
V
V
V
onl
y
1
15
4
30
15
0.1 0.3
Collector Cutoff Current
-ICES
BC177, 178, 179 "\, 258, 259 |
BC307, 308, 309
J
Collector Cutoff Current
BC320, 321, 322 only
Collector-Emitter Saturation Voltage
types
nA
uA
VCE-VCES VBE-O
T
A
=125°C
-VCB-20V lE-0
-VcB=20V I
E
=0
VCS=VCES VBE-O
-ICBO
-VCE(sat)*
nA
uA
TA=IOOQC
V
V
V
-IC=10mA -!B=0.5mA
-IC=100mA -lB=5mA
0.25
Collector-Emitter Knee Voltage
-VCEK
0.3 0.6
BC177, 178, 1791
onl
^
BC307, 308, 309
\r Saturation Voltage
-VBE(sat)*
All types
0.72
0.92
-I(3=10mA,lB*value at
which -lc=llmA -VcE
=
lV
-IC-10mA -lB=0-5mA
-1C -100mA -lB-5mA
-IC=2mA
-VCE-5V
V
V
Base-Emitter Voltage
All types
BC320, 321, 322 only
Current Gain-Bandwidth Product
Collector-Base Capacitance
BC177. 178, 179
-VBB
*
-VBE
*
fT
Cob
0.6 0.65 0.75'
V
0.7
180
0 7
V
. 7
MHz
-IC-lOmA -VcB=5V
-IC=10mA
f-lMHz
-VcE=5V
-V
C
B=IOV I
E
-O
3.6
J.2
7
6
BC257, 258, 259
3C307, 308, 309
BC320, 321, 322
3-2
3-2
NF
2
2
2
2
6
4
10
10
10
6
PF
PF
pF
PF
PP
dB
dB
dB
dB
dB
Noise Figure
BC177, 178
BC257, 258
BC307, 308
BC320, 321
-IC-0.2mA
RG-2KA
Af.200Hz
-VCE=5V
f-lkHz
* &ilse
Test
t
Pulse Width=0.3mS, Duty Cycle=l/
0
1 : equal_to_the value of absolute maximum ratings
PARAMETER
No/5e
Figure
BC179 "I
BC259 > only
BCJ09
BC322
1
D.C. CURRENT GAIN (
H
FE) @ -V£8""57
SYMBOL
MIH
TYP MAX
1.2
4
UNIT
TEST CONDITIONS
-1C =0. 2mA
RG=2K&
Af-200Hz
-7CE-57
f-lKHz
NF
dB
1.2
4
dB
-IC=0.2mA -703=5^
RG=2KA f=30Hz-15KHz
TA=25°C
at-Ic
(Pulsed)
0.01mA
2mA
100mA
HFE G-ROUP vi
KIN
70
TYP
70
110
60
MAX
140
HFE GROUP A
MIN TYP MAX
110
110
170
220
HFE GROUP B
MIN TYP MAX
'
200
HFE GROUP C
MIN
TYP
MAX
200
300
140
330
450
420
520
800
80
-VCE=57 f-lkHz TA=25°C
HFE GROUP 71
SYMBOL
MIN TYP MAX
20
4
h - PARAMETERS © -IC=2mA
^
h - PARAMETER
HFE GROUP A HFE GROUP B HFE GROUP c
MIN TYP MAX MIN TYP MAX
MIN TYP MAX
2.7
3
4-5
•
UNIT
Kfl
xlO-
4
Injwt Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
hie
n
re
1.4
2.5
8.7
hfe
h
oe
75 HO 150
20
4
3.5
125 190 260 240 330 500 450 580 900
60
35
25
r
v
TYPICAL CHARACTERISTICS AT TA=25°C (Pulse Test)
D.C. CURRENT GAIN
VS COLLECTOR CURRENT
AND
v
CE(sat)
VS COLLECTOR CURRENT
V
BE
200
0.01
100
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