ISSUED DATE :2004/09/20
REVISED DATE :
GD751SD
Description
S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E
V O LT A G E 4 0 V, C U R R E N T 0 . 0 3 A
Package Dimensions
The GD751SD is designed for high speed switching for detection and high reliability.
REF.
A
A1
A2
D
E
HE
Millimeter
Min.
Max.
0.85
1.05
0
0.10
0.80
1.00
1.15
1.45
1.60
1.80
2.30
2.70
REF.
L
b
c
Q1
Millimeter
Min.
Max.
0.20
0.25
0.10
0.40
0.40
0.18
0.15 BSC.
:
Parameter
Junction Temperature
Storage Temperature
Maximum Peak Repetitive Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Peak Forward Surge Current at 8.3mSec single half sine-wave
Typical Junction Capacitance between Terminal (Note 1)
Maximum Average Forward Rectified Current
Total Power Dissipation
Symbol
Tj
Tstg
V
RRM
V
RMS
V
DC
I
FSM
C
J
Io
PD
Ratings
+125
-40 ~ +125
40
28
40
0.2
2.0
0.03
225
V
V
V
A
pF
A
mW
Unit
Characteristics
at Ta = 25 :
Symbol
V
F
IR
Max
0.37
0.5
Unit
V
uA
Test Condition
IF = 1mA
VR = 30V
Characteristics
Maximum Instantaneous Forward Voltage
Maximum Average Reverse Current
2. ESD sensitive product handling required.
Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 1.0 volt.
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ISSUED DATE :2004/09/20
REVISED DATE :
Characteristics Curve
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan:
No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China:
(201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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