JMnic
Product Specification
Silicon NPN Power Transistors
2SC3460
DESCRIPTION
・With
TO-3PN package
・High
breakdown voltage and high reliability.
・Fast
switching speed
・Wide
area of safe operation
APPLICATIONS
・800V/6A
switching regulator applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1100
800
7
6
20
3
100
150
-55~150
UNIT
V
V
V
A
A
A
W
℃
℃
JMnic
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
C
ob
f
T
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=5mA ;R
BE
=∞
I
C
=1mA ;I
E
=0
I
E
=1mA ;I
C
=0
I
C
=3A; I
B
=0.6A
I
C
=3A ;I
B
=0.6A
V
CB
=800V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=0.4A ; V
CE
=5V
I
C
=2A ; V
CE
=5V
I
E
=0 ; V
CB
=10V;f=1MHz
I
C
=0.4A ; V
CE
=10V
10
8
120
15
MIN
800
1100
7
2SC3460
TYP.
MAX
UNIT
V
V
V
2.0
1.5
10
10
40
V
V
μA
μA
pF
MHz
Switching times
t
on
t
stg
t
f
Turn-on time
Storage time
Fall time
I
C
=4A;R
L
=100Ω
I
B1
=0.8A; I
B2
=-1.6A
V
CC
=400V
0.5
3.0
0.3
μs
μs
μs
h
FE-1
Classifications
K
10-20
L
15-30
M
20-40
2
JMnic
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3460
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
JMnic
Product Specification
Silicon NPN Power Transistors
2SC3460
4
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