Standard SRAM, 4KX1, 85ns, MOS, CDIP18
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | General Electric Solid State |
| 包装说明 | DIP, DIP18,.3 |
| Reach Compliance Code | unknow |
| 最长访问时间 | 85 ns |
| I/O 类型 | SEPARATE |
| JESD-30 代码 | R-XDIP-T18 |
| JESD-609代码 | e0 |
| 内存密度 | 4096 bi |
| 内存集成电路类型 | STANDARD SRAM |
| 内存宽度 | 1 |
| 端子数量 | 18 |
| 字数 | 4096 words |
| 字数代码 | 4000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 组织 | 4KX1 |
| 输出特性 | 3-STATE |
| 封装主体材料 | CERAMIC |
| 封装代码 | DIP |
| 封装等效代码 | DIP18,.3 |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 并行/串行 | PARALLEL |
| 电源 | 5 V |
| 认证状态 | Not Qualified |
| 筛选级别 | 38535Q/M;38534H;883B |
| 最小待机电流 | 4.5 V |
| 最大压摆率 | 0.18 mA |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | MOS |
| 温度等级 | MILITARY |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| Base Number Matches | 1 |
| MD2147/883B | MF2147/883C | MD2147-3/883C | D2147-3 | MD2147-3/C | D2147 | |
|---|---|---|---|---|---|---|
| 描述 | Standard SRAM, 4KX1, 85ns, MOS, CDIP18 | Standard SRAM, 4KX1, 85ns, MOS, CDFP18 | Standard SRAM, 4KX1, 70ns, MOS, CDIP18 | Standard SRAM, 4KX1, 65ns, MOS, CDIP18, | Standard SRAM, 4KX1, 70ns, MOS, CDIP18 | Standard SRAM, 4KX1, 80ns, MOS, CDIP18, |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 包装说明 | DIP, DIP18,.3 | DFP, FL18,.3 | DIP, DIP18,.3 | DIP, DIP18,.3 | DIP, DIP18,.3 | DIP, DIP18,.3 |
| Reach Compliance Code | unknow | unknow | unknown | unknown | unknown | unknown |
| 最长访问时间 | 85 ns | 85 ns | 70 ns | 65 ns | 70 ns | 80 ns |
| I/O 类型 | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE |
| JESD-30 代码 | R-XDIP-T18 | R-XDFP-F18 | R-XDIP-T18 | R-XDIP-T18 | R-XDIP-T18 | R-XDIP-T18 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 |
| 内存密度 | 4096 bi | 4096 bi | 4096 bit | 4096 bit | 4096 bit | 4096 bit |
| 内存集成电路类型 | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
| 内存宽度 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 18 | 18 | 18 | 18 | 18 | 18 |
| 字数 | 4096 words | 4096 words | 4096 words | 4096 words | 4096 words | 4096 words |
| 字数代码 | 4000 | 4000 | 4000 | 4000 | 4000 | 4000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | 70 °C | 125 °C | 70 °C |
| 最低工作温度 | -55 °C | -55 °C | -55 °C | - | -55 °C | - |
| 组织 | 4KX1 | 4KX1 | 4KX1 | 4KX1 | 4KX1 | 4KX1 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC |
| 封装代码 | DIP | DFP | DIP | DIP | DIP | DIP |
| 封装等效代码 | DIP18,.3 | FL18,.3 | DIP18,.3 | DIP18,.3 | DIP18,.3 | DIP18,.3 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | FLATPACK | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 电源 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 最小待机电流 | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 最大压摆率 | 0.18 mA | 0.18 mA | 0.18 mA | 0.18 mA | 0.18 mA | 0.16 mA |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | YES | NO | NO | NO | NO |
| 技术 | MOS | MOS | MOS | MOS | MOS | MOS |
| 温度等级 | MILITARY | MILITARY | MILITARY | COMMERCIAL | MILITARY | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE | FLAT | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子节距 | 2.54 mm | 1.27 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 厂商名称 | General Electric Solid State | - | - | General Electric Solid State | General Electric Solid State | General Electric Solid State |
| 筛选级别 | 38535Q/M;38534H;883B | MIL-STD-883 Class C | MIL-STD-883 Class C | - | MIL-STD-883 Class C | - |
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
