F10C20A thru F10C60A
Pb
®
Pb Free Plating Product
F10C20A thru F10C60A
10.0 Ampere Dual Common Anode Ultra Fast Recovery Rectifiers
Features
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
TO-220AB
.419(10.66)
.387(9.85)
.139(3.55)
MIN
Unit : inch (mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
.269(6.85)
.226(5.75)
.624(15.87)
.50(12.7)MIN
Mechanical Data
Case: Heatsink TO-220AB
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.2 gram approximately
.038(0.96)
.019(0.50)
.177(4.5)MAX
Automotive Inverters/Solar Inverters
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
.548(13.93)
.025(0.65)MAX
.1(2.54)
.1(2.54)
Case
Case
Case
Positive
Common Cathode
Suffix "C"
Negative
Common Anode
Suffix "A"
Doubler
Tandem Polarity
Suffix "D"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
o
C
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current T
C
=100
C
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
@ 5.0 A
Maximum DC Reverse Current @T
J
=25
C
At Rated DC Blocking Voltage @T
J
=125
C
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Junction and Storage
Temperature Range
o
o
o
F10C20C
F10C20A
F10C20D
200
140
200
F10C40C
F10C40A
F10C40D
400
280
400
10.0
F10C60C
F10C60A
F10C60D
600
420
600
UNIT
V
V
V
A
V
RRM
V
RMS
V
DC
IF
(AV)
I
FSM
100
A
V
F
I
R
Trr
C
J
R
JC
T
J
, T
STG
0.98
1.3
10.0
250
35
65
2.2
-55 to +150
1.7
V
uA
uA
nS
pF
o
CW
o
C
NOTES : (1) Reverse recovery test conditions I
F
= 0.5A, I
R
= 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
Rev.04/2014
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/
F10C20A thru F10C60A
®
FIG.1 - FORWARD CURRENT DERATING CURVE
10
100
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT,
AMPERES
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
8
80
6
60
4
40
2
60 Hz Resistive or
Inductive load
0
0
50
100
o
20
0
150
1
10
100
CASE TEMPERATURE, C
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
IINSTANTANEOUS FORWARD CURRENT,
AMPERES
50
F10C20A
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
1000
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
5
F10C40A
F10C60A
100
T
J
=125 C
o
10
T
J
=25 C
1
o
1
0.1
0.2
0.4
0.6
0.8
T
J
=25 C
PULSE WIDTH=300uS
1% DUTY CYCLE
1.0
1.2
1.4
1.6
o
0.1
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
JUNCTION CAPACITANCE, pF
T
J
= 25 C
f = 1.0 MHZ
Vsig = 50mVp-p
o
100
10
0.1
1.0
4.0
10
100
REVERSE VOLTAGE, VOLTS
Rev.04/2014
© 2006 Thinki Semiconductor Co.,Ltd.
Page 2/2
http://www.thinkisemi.com/
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