SMD Type
Transistors
NTA4151P, NTE4151P
Small Signal MOSFET
−20 V, −760 mA, Single P−Channel,
Gate Zener, SC−75, SC−89
Features
V
(BR)DSS
R
DS(on)
TYP
0.26
W
@ −4.5 V
−20 V
0.35
W
@ −2.5 V
0.49
W
@ −1.8 V
−760 mA
I
D
MAX
•
•
•
•
•
•
•
•
•
Low R
DS(on)
for Higher Efficiency and Longer Battery Life
Small Outline Package (1.6 x 1.6 mm)
SC−75 Standard Gullwing Package
ESD Protected Gate
Pb−Free Packages are Available
P−Channel MOSFET
D
Applications
High Side Load Switch
DC−DC Conversion
Small Drive Circuits
Battery Operated Systems such as Cell Phones, PDAs, Digital
Cameras, etc.
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current
(Note 1)
Power Dissipation (Note 1)
SC−75
SC−89
Pulsed Drain Current
Steady State
Symbol
V
DSS
V
GS
I
D
P
D
Steady State
tp =10
ms
I
DM
T
J
,
T
STG
I
S
T
L
ESD
301
313
Value
−20
±6.0
−760
G
S
Units
V
V
mA
mW
±1000
−55 to
150
−250
260
1800
mA
Operating Junction and Storage Temperature
Continuous Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8 in from case for 10 s)
Gate−to−Source ESD Rating −
(Human Body Model, Method 3015)
°
C
mA
°C
V
THERMAL RESISTANCE RATINGS
Junction−to−Ambient − Steady State (Note 1)
SC−75
SC−89
R
qJA
415
400
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
SMD Type
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise stated)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
Drain−to−Source On Resistance
V
GS(TH)
R
DS(on)
V
DS
= V
GS
, I
D
= −250
mA
V
GS
= −4.5 V, I
D
= −350 mA
V
GS
= −2.5 V, I
D
= −300 mA
V
GS
= −1.8 V, I
D
= −150 mA
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
SWITCHING CHARACTERISTICS
(Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V, I
S
= −250 mA
td
(ON)
t
r
td
(OFF)
t
f
V
GS
= −4.5 V, V
DD
= −10 V,
I
D
= −200 mA, R
G
= 10
W
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GS
= −4.5 V, V
DD
= −10 V,
I
D
= −0.3 A
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= −5.0 V
g
FS
V
DS
= −10 V, I
D
= −250 mA
−0.45
V
(BR)DSS
I
DSS
I
GSS
V
GS
= 0 V, I
D
= −250
mA
V
GS
= 0 V, V
DS
= −16 V
V
DS
= 0 V, V
GS
=
±4.5
V
−20
Symbol
Test Condition
Min
Transistors
Typ
Max
Unit
V
−1.0
$1.0
−100
$10
nA
mA
V
0.26
0.35
0.49
0.4
0.36
0.45
1.0
S
W
156
28
18
2.1
0.125
0.325
0.5
pF
nC
8.0
8.2
29
20.4
ns
−0.72
−1.1
V
2. Pulse Test: pulse width
≤
300
ms,
duty cycle
≤
2%.
3. Switching characteristics are independent of operating junction temperatures.
SMD Type
Transistors
0.7
T
J
= 25°C
−I
D,
DRAIN CURRENT (AMPS)
−I
D,
DRAIN CURRENT (AMPS)
0.6
−1.5 V
0.5
0.4
0.3
0.2
0.1
0
0
0.5
1.0
1.5
2.0
−1.0 V
2.5
3.0
V
GS
= −1.75 V to −4.5 V
−1.25 V
0.6
0.5
0.4
0.3
0.2
V
DS
w
−10 V
T
J
= 125°C
0.1
T
J
= 25°C
T
J
= −55°C
0
0
0.4
0.8
1.2
1.6
2.0
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
−V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
0.6
V
GS
= −4.5 V
0.5
0.4
0.3
0.2
0.1
0
0
T
J
= 125°C
T
J
= 25°C
T
J
= −55°C
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
0.6
Figure 2. Transfer Characteristics
V
GS
= −2.5 V
0.5
0.4
0.3
0.2
0.1
0
0
T
J
= 125°C
T
J
= 25°C
T
J
= −55°C
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.1
0.2
0.3
0.4
0.5
0.6
0.7
−I
D,
DRAIN CURRENT (AMPS)
−I
D,
DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Drain Current and
Temperature
1.6
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
I
D
= − 0.35 A
V
GS
= −4.5 V
C, CAPACITANCE (pF)
Figure 4. On−Resistance vs. Drain Current and
Temperature
250
T
J
= 25°C
200
C
ISS
150
1.4
1.2
1.0
100
C
OSS
C
RSS
0
4
8
12
16
20
0.8
50
0.6
−50
−25
0
25
50
75
100
125
150
0
T
J
, JUNCTION TEMPERATURE (°C)
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Capacitance Variation
SMD Type
Transistors
−V
GS,
GATE−TO−SOURCE VOLTAGE (VOLTS)
5
−I
S
, SOURCE CURRENT (AMPS)
Q
T
4
0.7
V
GS
= 0 V
0.6
0.5
0.4
0.3
0.2
0.1
T
J
= 25°C
0
0
0.2
0.4
0.6
0.8
1.0
T
J
= 125°C
3
Q
GS
Q
GD
2
1
0
0
0.4
V
DS
= −10 V
I
D
= −0.3 A
T
A
= 25°C
2.0
0.8
1.2
1.6
Q
G
, TOTAL GATE CHARGE (nC)
2.4
−V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 7. Gate−to−Source Voltage vs. Total
Gate Charge
Figure 8. Diode Forward Voltage vs. Current
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE
1.0
D = 0.5
0.2
0.1
0.05
0.02
0.1
0.01
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
1.0
10
100
1000
Figure 9. Normalized Thermal Response
SMD Type
Transistors
−E−
2
3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS
MIN
NOM MAX
0.70
0.80
0.90
0.00
0.05
0.10
0.15
0.20
0.30
0.10
0.15
0.25
1.55
1.60
1.65
0.70
0.80
0.90
1.00 BSC
0.10
0.15
0.20
1.50
1.60
1.70
INCHES
NOM
0.031
0.002
0.008
0.006
0.063
0.031
0.04 BSC
0.004 0.006
0.061 0.063
MIN
0.027
0.000
0.006
0.004
0.059
0.027
e
1
−D−
b
3 PL
0.20 (0.008)
M
D
H
E
0.20 (0.008) E
DIM
A
A1
b
C
D
E
e
L
H
E
MAX
0.035
0.004
0.012
0.010
0.067
0.035
0.008
0.065
C
A
L
A1
STYLE 5:
PIN 1. GATE
2. SOURCE
3. DRAIN
SOLDERING FOOTPRINT*
0.356
0.014
1.803
0.071
0.787
0.031
0.508
0.020
1.000
0.039
SCALE 10:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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