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SMBJ17A-TR

产品描述600 W, UNIDIRECTIONAL, SILICON, TVS DIODE
产品类别半导体    分立半导体   
文件大小92KB,共5页
制造商Vishay(威世)
官网地址http://www.vishay.com
下载文档 详细参数 选型对比 全文预览

SMBJ17A-TR概述

600 W, UNIDIRECTIONAL, SILICON, TVS DIODE

600 W, 单向, 硅, 瞬态抑制二极管

SMBJ17A-TR规格参数

参数名称属性值
端子数量2
元件数量1
最大击穿电压27 V
最小击穿电压24.4 V
加工封装描述PLASTIC, SMB, 2 PIN
无铅Yes
欧盟RoHS规范Yes
状态ACTIVE
包装形状RECTANGULAR
包装尺寸SMALL OUTLINE
表面贴装Yes
端子形式C BEND
端子涂层NOT SPECIFIED
端子位置DUAL
包装材料PLASTIC/EPOXY
工艺AVALANCHE
结构SINGLE
二极管元件材料SILICON
最大功耗极限1.5 W
极性UNIDIRECTIONAL
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
关闭电压22 V
最大非重复峰值转速功率600 W

文档预览

下载PDF文档
SMBJ5.0A thru SMBJ188A
www.vishay.com
Vishay General Semiconductor
Surface Mount T
RANS
Z
ORB®
Transient Voltage Suppressors
FEATURES
Low profile package
Ideal for automated placement
Glass passivated chip junction
Available in uni-directional and bi-directional
600 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate (duty
cycle): 0.01 %
Excellent clamping capability
Very fast response time
Low incremental surge resistance
Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DO-214AA (SMB J-Bend)
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
V
WM
P
PPM
I
FSM
(uni-directional only)
T
J
max.
5.0 V to 188 V
600 W
100 A
150 °C
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
MECHANICAL DATA
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional devices use CA suffix (e.g. SMBJ10CA).
Electrical characteristics apply in both directions.
Case:
DO-214AA (SMBJ)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
For uni-directional types the band denotes
cathode end, no marking on bi-directional types
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs waveform
(1)(2)
(fig. 1)
Peak pulse current with a 10/1000 μs waveform
(1)
Peak forward surge current 8.3 ms single half sine-wave uni-directional only
Operating junction and storage temperature range
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2.
A
(2)
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
(2)
SYMBOL
P
PPM
I
PPM
I
FSM
T
J
, T
STG
VALUE
600
See next table
100
- 55 to + 150
UNIT
W
A
A
°C
Revision: 26-Jul-12
Document Number: 88392
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

SMBJ17A-TR相似产品对比

SMBJ17A-TR SMBJ22A SMBJ75A
描述 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
表面贴装 Yes YES YES
极性 UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL
二极管类型 TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
是否Rohs认证 - 不符合 不符合
厂商名称 - Vishay(威世) Vishay(威世)
Reach Compliance Code - unknow unknow
击穿电压标称值 - 25.65 V 87.7 V
最大钳位电压 - 35.5 V 121 V
JESD-609代码 - e0 e0
最大重复峰值反向电压 - 22 V 75 V
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