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1N4005G

产品描述1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
产品类别半导体    分立半导体   
文件大小313KB,共4页
制造商SMC
官网地址http://www.smc-diodes.com/
下载文档 详细参数 选型对比 全文预览

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1N4005G概述

1 A, 600 V, SILICON, SIGNAL DIODE, DO-41

1 A, 600 V, 硅, 信号二极管, DO-41

1N4005G规格参数

参数名称属性值
端子数量2
元件数量1
加工封装描述GREEN, PLASTIC PACKAGE-2
状态ACTIVE
包装形状ROUND
包装尺寸LONG FORM
端子形式WIRE
端子涂层PURE TIN
端子位置AXIAL
包装材料PLASTIC/EPOXY
结构SINGLE
壳体连接ISOLATED
二极管元件材料SILICON
二极管类型SIGNAL DIODE
最大重复峰值反向电压600 V
最大平均正向电流1 A

文档预览

下载PDF文档
1N4001G
THRU
1N4007G
Technical Data
Data Sheet N0544, Rev. A
1.0A GLASS PASSIVATED RECTIFIER
Features
Diffused Junction
Low Forward Voltage Drop
High Current Capability
High Reliability
High Surge Current Capability
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
1N4001G THRU 1N4007G
DO-41
Circuit Diagram
Mechanical Data
Case: molded plastic
Terminals: Plated leads, solderable per MIL-STD-
202, Method 208
Polarity: Cathode band
Mounting Position: Any
Weight:0.34 grams(approx)
Maximum Ratings and Electrical Characteristics
@T
A
=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%
.
Type Number
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average forward rectified output current
@T
A
= 75°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
@I
F
=1.0A
@T
A
= 25°C
@T
A
= 100°C
Symbol
V
RRM
V
RWM
V
R
V
RMS
I
O
I
FSM
V
FM
I
RM
C
J
R
θJA
T
J
T
STG
1N
1N
1N
1N
1N
1N
1N
Units
4001G 4002G 4003G 4004G 4005G 4006G 4007G
50
35
5
100
3
70
1
200
7
140
2
400
1
280
1.0
30
1.0
5.0
50
8
100
-65 to +175
-65 to +175
4
600
2
420
6
800
4
560
8
1000
5
700
1
V
1
V
A
A
V
µA
pF
°C/W
°C
°C
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to
Ambient (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com

1N4005G相似产品对比

1N4005G 1N4001G 1N4004G 1N4006G 1N4002G
描述 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 SILICON, SIGNAL DIODE SIGNAL DIODE
端子数量 2 2 2 - -
元件数量 1 1 1 - -
加工封装描述 GREEN, PLASTIC PACKAGE-2 塑料, DO-41, 2 PIN 塑料 PACKAGE-2 - -
状态 ACTIVE ACTIVE DISCONTINUED - ACTIVE
包装形状 ROUND - -
包装尺寸 LONG FORM LONG FORM LONG FORM - -
端子形式 WIRE 线 线 - -
端子位置 AXIAL AXIAL AXIAL - -
包装材料 PLASTIC/EPOXY 塑料/环氧树脂 塑料/环氧树脂 - -
结构 SINGLE 单一的 单一的 - -
壳体连接 ISOLATED 隔离 隔离 - -
二极管元件材料 SILICON - -
二极管类型 SIGNAL DIODE 信号二极管 信号二极管 - SIGNAL DIODE
最大重复峰值反向电压 600 V 50 V 400 V - -
最大平均正向电流 1 A 1 A 1 A - -

 
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