SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N1188, Rev. A
201CNQ SERIES
Green Products
201CNQ035/201CNQ040/201CNQ045/201CNQ050
SCHOTTKY RECTIFIER
Applications:
●
High current switching power supply
●
Plating power supply
●
Free-Wheeling diodes
●
Reverse battery protection
●
Converters
●
UPS System
●
Welding
Features:
•
•
•
•
•
•
•
•
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175
℃
T
J
operation
Center tap module
High purity, high temperature epoxy encapsulation for enhanced mechanical strength and
moisture resistance
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term reliability
This is a Pb
−
Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
Mechanical Dimensions: In mm/ Inches
PRM4 (Non-Isolated)
MARKING,MOLDING RESIN
st
nd
Marking for 201CNQ035/040/045/050, 1 row SS YYWWL, 2 row 201CNQ035/040/045/050
Where YY is the manufacture year
WW is the manufacture week code
L is the wafer’s Lot Number
Molding resin
Epoxy resin UL:94V-0
•
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907
•
•
FAX (86) 25-87123900
•
World Wide Web Site - http://www.sangdest.com.cn
•
E-Mail Address - sales@ sangdest.com.cn
•
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N1188, Rev. A
201CNQ SERIES
Green Products
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Symbol
V
RWM
Condition
-
35
40
45
50
100
200
Max.
201CNQ035
201CNQ040
201CNQ045
201CNQ050
per leg
per device
3840
135
20
Units
V
Max. Average Forward
Max. Peak One Cycle Non-
Repetitive Surge Current
(per leg)
Non-Repetitive Avalanche
Energy(peg leg)
Repetitive Avalanche
Current(peg leg)
I
F(AV)
I
FSM
E
AS
I
AR
50% duty cycle @T
C
=121°C,
rectangular wave form
8.3 ms, half Sine pulse
T
J
=25℃,I
AS
=20A,L=0.67mH
Current decaying linearly to
zero in 1
μsec
Frequency
limited by T
J
max. V
A
=1.5×
V
R
typical
Condition
@ 100A, Pulse, T
J
= 25
°C
@ 200A, Pulse, T
J
= 25
°C
@ 100A, Pulse, T
J
= 125
°C
@ 200A, Pulse, T
J
= 125
°C
@V
R
= rated V
R
T
J
= 25
°C
@V
R
= rated V
R
T
J
= 125
°C
@V
R
= 5V, T
C
= 25
°C
f
SIG
= 1MHz
Measured lead to lead 5 mm
from package body
-
A
A
mJ
A
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop
(per leg) *
Symbol
V
F1
V
F2
Max. Reverse Current (per
leg) *
Max. Junction Capacitance
(per leg)
Typical Series Inductance
(per leg)
Max. Voltage Rate of Change
*
Pulse Width < 300µs, Duty Cycle <2%
I
R1
I
R2
C
T
L
S
dv/dt
Max.
0.67
0.81
0.58
0.71
10
90
5200
7.0
10,000
Units
V
V
mA
mA
pF
nH
V/μs
Thermal-Mechanical Specifications:
Characteristics
Max. Junction Temperature
Max. Storage Temperature
Maximum Thermal
Resistance Junction to Case
(per leg)
Maximum Thermal
Resistance Junction to Case
(per package)
Typical Thermal Resistance,
case to Heat Sink
Mounting Torque
Approximate Weight
Case Style
Symbol
T
J
T
stg
R
θJC
R
θJC
R
θcs
Condition
-
-
DC operation
DC operation
Mounting surface, smooth
and greased
Specification
-55 to +175
-55 to +175
0.50
0.25
0.10
24(min)
35(max)
35(min)
46(max)
Units
°C
°C
°C/W
°C/W
°C/W
T
M
wt
Mounting
Torque
-
Terminal
Torque
-
79
PRM4 Non-Isolated
Kg-cm
g
•
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907
•
•
FAX (86) 25-87123900
•
World Wide Web Site - http://www.sangdest.com.cn
•
E-Mail Address - sales@ sangdest.com.cn
•
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N1188, Rev. A
201CNQ SERIES
Green Products
•
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907
•
•
FAX (86) 25-87123900
•
World Wide Web Site - http://www.sangdest.com.cn
•
E-Mail Address - sales@ sangdest.com.cn
•
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N1188, Rev. A
201CNQ SERIES
Green Products
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC
- Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
•
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907
•
•
FAX (86) 25-87123900
•
World Wide Web Site - http://www.sangdest.com.cn
•
E-Mail Address - sales@ sangdest.com.cn
•
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