COMMERCIAL LASERS
50 to 200 mW, 810/830/852 nm Single-mode Diode Lasers
5400 Series
Key Features
• Up to 200 mW continuous wave (CW) output power
• Various operating wavelength ranges within the 800 to
862 nm region
• Diffraction-limited beam
• TEM
00
single transverse mode
Applications
• Image recording
• Printing
• Spectral analysis
• Optical data storage
• Point-to-point communications
High-resolution applications including optical data storage, image recording,
spectral analysis, printing, point-to-point free-space communications and
frequency doubling all require diffraction-limited sources. Faster writing, wider
dynamic range and better signal-to-noise ratio may be achieved with JDSU’s
high-reliability 5400 series single-mode diode lasers.
Available in power levels up to 200 mW kink-free, this advanced diode laser
combines a quantum well structure and a real-refractive index-guided single-
mode waveguide to provide high power, low astigmatism, narrow spectral width
and a single spatial mode Gaussian far field. 5400 series diode lasers are among the
most reliable high-power diode lasers available in the industry today.
The 5400 series diode lasers operate in single longitudinal mode under some
conditions. Like in all Fabry-Perot index-guided diode lasers, spectral broadening,
mode hopping and longitudinal mode instability may occur due to small changes
in drive current, diode junction temperature or optical feedback.
The unique diode structure features high reliability with long operating life and
very low early failure rate. Very high brightness (20 MW/cm
2
steradian) is
provided by the 5430.
Useful packaging options include open heatsink, SOT or TO-3 packages, internal
photodiode, thermoelectric cooler and wavelength selection.
NORTH AMERICA
:
800 498-JDSU (5378)
WORLDWIDE
:
+800 5378-JDSU
WEBSITE
:
www.jdsu.com
5400 SERIES DIODE LASERS
2
Dimensions Diagram
(Specifications in inches [mm] unless otherwise noted.)
Standard Tolerances
inches: x.xx = ±0.02
mm: x.x = ±0.5
x.xxx = ±0.010
x.xx = ±0.25
Package Style: Open Heatsink (C)
0.086 (2.18)
0.40 Nom. (10.0)
0.03
(0.7)
Case is
anode ( + )
θ
θ
0.02
(0.51)
Protective Tab
Laser
Output
0.31
(8.0)
0.157
(3.98)
Cathode
Lead (
−
)
0.110 (2.8)
Insulator
Stand-off
0.125
(3.18)
0.25 (6.4)
Hole, 0.09 (2.3) Dia.
Counterbore, 0.18 (4.4) Dia.
0.05 (1.2) Deep
Package Style: SOT-148 Window (G1)
0.05 (1.3)
Pinout
0.26
Nom.
(6.6)
0.20
(5.1)
0.14 (3.5)
Laser Facet Depth
= 0.04 (1.0) Nom.
0.354
±0.005
(9.00
±0.13)
0.260
±0.005
(6.60
±0.13)
0.14 (3.6)
Pin
1
2
3
Description
2
3
0.10
(2.5)
1
Laser
Output
θ
θ
Laser cathode (–)
Laser anode, MPD cathode
and case ground
Monitor photodiode anode (+)
Window: AR Coating, Both Surfaces
Thickness: 0.0100
±0.002
(0.25
±0.05)
Package Style: TO-3 Window (H1)
0.12
(3.0)
∅
0.04
(1.0) Typ.
0.50
(12.7)
0.27
(6.7)
Window
0.10 (2.5) Dia.
Laser
Output
Within 0.02 (0.5)
of Package Axis
1.00 (25.4) Dia.
0.03 (0.7)
Depth of Laser
Output Facet
0.16 (4.0) Dia.
2 PLCS
Bolt Circle
0.50 (12.7) Dia.
LID O.D.
0.75 (19.0)
Pinout
Pin
1
2
3
4
5
6
7
8
Description
TEC (+)
Thermistor (1)
Thermistor (2)
Laser cathode (–)
Laser anode (+), case
Monitor photodiode anode
Monitor photodiode cathode
TEC (–)
1.187
(30.15)
1.53
(38.1)
θ
θ
40
Typ.
1
8
5400 SERIES DIODE LASERS
3
Available Configurations
5400 Series
5400-C
5401-G1
5402-H1
5410 Series
5410-C
5411-G1
5412-H1
5420 Series
5420-C
5421-G1
5422-H1
5430 Series
5430-C
5431-G1
5432-H1
Electro-optical Specifications
Parameter
Laser Characteristics
CW output power, kink-free
Center wavelength
Spectral width
1
Slope efficiency
Conversion efficiency
Emitting dimensions
FWHM beam divergence
Parallel to junction
Perpendicular to junction
Threshold current
Operating current
Operating voltage
Series resistance
Thermal resistance
Recommended case temperature
Absolute Maximum Ratings
Reverse voltage
Case operating temperature
Storage temperature range
Lead soldering temperature
Monitor Photodiode
2
Sensitivity
Capacitance
Breakdown voltage
Operating voltage
Thermoelectric Cooler
2,3
Drive current
Drive voltage
Thermal resistance
Thermistor resistance
1.
Emission bandwidth for 90% integrated power.
Symbol
5400 Series
Min.
Typ.
Max.
–
–
–
0.75
–
–
–
–
–
–
–
–
–
-20
–
-20
-40
–
0.1
–
–
–
–
–
–
–
–
(note
7
)
3
0.85
30
3x1
9
30
35
95
(note
6
)
4.0
60
–
–
–
–
–
–
6
25
10
2.0
4.0
15
10
50
–
5
–
–
–
–
–
45
105
–
6.0
–
30
3
50
80
250
20
–
–
–
–
–
–
–
5410 Series
Min.
Typ.
Max.
–
–
–
0.75
–
–
–
–
–
–
–
–
–
-20
–
-20
-40
–
0.1
–
–
–
–
–
–
–
–
(note
7
)
3
0.85
30
3x1
9
30
35
160
(note
6
)
4.0
60
–
–
–
–
–
–
6
25
10
2.0
4.0
15
10
100
–
5
–
–
–
–
–
45
170
–
6.0
–
30
3
50
80
250
20
–
–
–
–
–
–
–
Unit
Po
λ
c
∆λ
η
D = Po/(Iop–Ith)
η
= Po/(IopVop)
WxH
θ
//
θ⊥
Ith
Iop
Vop
Rs
Rth
Tc
Vrl
Top
Tstg
Tis
–
–
Vbd
Vop
ITE
VTE
Rth
Rtherm
mW
nm
mW/mA
%
µm
degrees
degrees
mA
mA
Ω
°C/W
°C
V
°C
°C
°C (5 sec.)
µA/mW
pF
V
V
A
V
°C/W
kΩ
2. Not available on C package.
3. Not available on G1 package.
4. Typical values at 25 °C and 0.6 NA collection optics.
5. Features common to all 5400 series diode lasers include:
a. Duty factor of 100%.
b. Temperature coefficient of wavelength is approximately 0.3 nm/°C.
c. Temperature coefficient of threshold current can be modeled as:
I
TH2
= I
TH1
exp [(T
2
– T
1
)/T
0
] where T
0
is a device constant of about 110 °K.
d. Temperature coefficient of operating current is approximately 0.5 to
0.7% per °C.
6. Forward voltage is typically: V
f
= 1.5 V + I
op
x R
s
.
7. Wavelength ranges for the 5400 and 5410 series:
800-820 nm
810-850 nm
842-862 nm
A variety of part numbers are available that each designate a particular subset within these wavelength ranges. Consult tables on page 5.
8. Astigmatism is less than 5 µm.
5400 SERIES DIODE LASERS
4
Electro-optical Specifications
Continued
Parameter
Laser Characteristics
CW output power, kink-free
Center wavelength
Spectral width
1
Slope efficiency
Conversion efficiency
Emitting dimensions
FWHM beam divergence
Parallel to junction
Perpendicular to junction
Threshold current
Operating current
Operating voltage
Series resistance
Thermal resistance
Recommended case temperature
Absolute Maximum Ratings
Reverse voltage
Case operating temperature
Storage temperature range
Lead soldering temperature
Monitor Photodiode
2
Sensitivity
Capacitance
Breakdown voltage
Operating voltage
Thermoelectric Cooler
2,3
Drive current
Drive voltage
Thermal resistance
Thermistor resistance
1.
Emission bandwidth for 90% integrated power.
Symbol
5420 Series
Min.
Typ.
Max.
–
–
–
0.75
–
–
–
–
–
–
–
–
–
-20
–
-20
-40
–
0.1
–
–
–
–
–
–
–
–
(note
7
)
3
0.85
30
3x1
9
30
35
210
(note
6
)
4.0
60
–
–
–
–
–
–
6
25
10
2.0
4.0
15
10
150
–
5
–
–
–
–
–
45
230
–
6.0
–
30
3
50
80
250
20
–
–
–
–
–
–
–
5430 Series
Min.
Typ.
Max.
–
–
–
0.75
–
–
–
–
–
–
–
–
–
-20
–
-20
-40
–
0.1
–
–
–
–
–
–
–
–
(note
7
)
3
0.85
30
3x1
9
30
40
270
(note
6
)
4.0
60
–
–
–
–
–
–
6
25
10
2.0
4.0
15
10
200
–
5
–
–
–
–
–
50
300
–
6.0
–
30
3
50
80
250
20
–
–
–
–
–
–
–
Unit
Po
λ
c
∆λ
η
D = Po/(Iop–Ith)
η
= Po/(IopVop)
WxH
θ
//
θ⊥
Ith
Iop
Vop
Rs
Rth
Tc
Vrl
Top
Tstg
Tis
–
–
Vbd
Vop
ITE
VTE
Rth
Rtherm
mW
nm
mW/mA
%
µm
degrees
degrees
mA
mA
Ω
°C/W
°C
V
°C
°C
°C (5 sec.)
µA/mW
pF
V
V
A
V
°C/W
kΩ
2. Not available on C package.
3. Not available on G1 package.
4. Typical values at 25 °C and 0.6 NA collection optics.
5. Features common to all 5400 series diode lasers include:
a. Duty factor of 100%.
b. Temperature coefficient of wavelength is approximately 0.3 nm/°C.
c. Temperature coefficient of threshold current can be modeled as:
I
TH2
= I
TH1
exp [(T
2
– T
1
)/T
0
] where T
0
is a device constant of about 110 °K.
d. Temperature coefficient of operating current is approximately 0.5 to
0.7% per °C.
6. Forward voltage is typically: V
f
= 1.5 V + I
op
x R
s
.
7. Wavelength ranges for the 5420 series:
800-820 nm
810-850 nm
842-862 nm
Wavelength range for the 5430 series is limited to 820-840 nm.
A variety of part numbers are available that each designate a particular subset within these wavelength ranges. Consult tables on page 5.
8. Astigmatism is less than 5 µm.
5400 SERIES DIODE LASERS
5
Typical Optical Characteristics
Light vs. Current
Characteristics
Light vs. Current
Characteristics
Light vs. Current
Characteristics
Far Field Energy
Distribution
Far Field Energy
Distribution
5410
5420
150
200
5430
200 mW
160 mW
FWHM
= 30
o
FWHM
= 9
o
100 mW
CW Output Power (mW)
100
50
5400
75
100
0
40
80 120 160 200
Current (mA)
0
50 100 150 200
Current (mA)
0
60 120 180 240 300
Current (mA)
40
θ
20
0
20
40
20 10
(degrees)
θ
0 10
20
(degrees)
Ordering Information
For more information on this or other products and their availability, please contact your local JDSU account manager or
JDSU directly at 1-800-498-JDSU (5378) in North America and +800-5378-JDSU worldwide or via e-mail at
customer.service@jdsu.com.
Sample: 54-00004
Package Style: Open Heat Sink with No MPD
Part Number
54-00004
54-00007
54-00009
54-00176
54-00148
54-00161
54-00162
54-00177
54-00150
54-00053
54-00055
54-00178
54-00070
Wavelength
810 ± 4
nm
830 ± 4
nm
852 ± 4
nm
852 ± 10
nm
810 ± 4
nm
830 ± 10
nm
852 ± 4
nm
852 ± 10
nm
810 ± 4
nm
830 ± 10
nm
852 ± 4
nm
852 ± 10
nm
830 ± 10
nm
Power
50 mW
50 mW
50 mW
50 mW
100 mW
100 mW
100 mW
100 mW
150 mW
150 mW
150 mW
150 mW
200 mW
Package Style: SOT-148 with MPD
Part Number
54-00012
54-00166
54-00015
54-00016
54-00141
54-00001
54-00018
54-00017
54-00201
54-00159
54-00187
54-00038
54-00039
54-00179
54-00163
54-00040
54-00151
54-00076
54-00058
54-00061
54-00200
54-00060
54-00062
54-00180
54-00072
Wavelength
810 ± 4
nm
806-812
nm
810 ± 10
nm
830 ± 10
nm
820-850
nm
830 ± 20
nm
852 ± 4
nm
852 ± 10
nm
806-812
nm
810 ± 4
nm
806-814
nm
810 ± 10
nm
830 ± 10
nm
830 ± 20
nm
852 ± 4
nm
852 ± 10
nm
810 ± 4
nm
805-815
nm
811 ± 4
nm
810 ± 10
nm
809-816
nm
830 ± 10
nm
852 ± 4
nm
852 ± 10
nm
830 ± 10
nm
Power
50 mW
50 mW
50 mW
50 mW
50 mW
50 mW
50 mW
50 mW
100 mW
100 mW
100 mW
100 mW
100 mW
100 mW
100 mW
100 mW
150 mW
150 mW
150 mW
150 mW
150 mW
150 mW
150 mW
150 mW
200 mW
Package Style: TO-3 with TEC and MPD
Part Number
54-00020
54-00023
54-00025
54-00149
54-00164
54-00165
54-00152
54-00067
54-00069
54-00074
Wavelength
810 ± 4
nm
830 ± 10
nm
852 ± 4
nm
810 ± 4
nm
830 ± 10
nm
852 ± 4
nm
810 ± 4
nm
830 ± 10
nm
852 ± 4
nm
830 ± 10
nm
Power
50 mW
50 mW
50 mW
100 mW
100 mW
100 mW
150 mW
150 mW
150 mW
200 mW
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