1N3212 thru 1N3214R
Silicon Standard
Recovery Diode
Features
• High Surge Capability
• Types from 400 V to 600 V V
RRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
DO-5 Package
V
RRM
= 400 V - 600 V
I
F
= 15 A
Maximum ratings, at T
j
= 25 °C, unless otherwise specified
Parameter
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
Symbol
V
RRM
V
RMS
V
DC
I
F
I
F,SM
T
j
T
stg
T
C
≤
150 °C
T
C
= 25 °C, t
p
= 8.3 ms
Conditions
("R" devices have leads reversed)
1N3212 (R)
400
280
400
15
297
-55 to 150
-55 to 150
1N3213 (R)
500
350
500
15
297
-55 to 150
-55 to 150
1N3214 (R)
600
420
600
15
297
-55 to 150
-55 to 150
Unit
V
V
V
A
A
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Symbol
V
F
I
R
Conditions
I
F
= 15 A, T
j
= 25 °C
V
R
= 50 V, T
j
= 25 °C
V
R
= 50 V, T
j
= 150 °C
1N3212 (R)
1.5
10
10
0.65
1N3213 (R)
1.5
10
10
0.65
1N3214 (R)
1.5
10
10
0.65
Unit
V
μA
mA
°C/W
Thermal characteristics
Thermal resistance, junction - ca
R
thJC
www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
1
1N3212 thru 1N3214R
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
M
DO- 5 (DO-203AB)
J
K
P
D
B
N
C
G
F
A
E
Inches
Min
A
B
C
D
E
F
G
J
K
M
N
P
0.669
-----
-----
0.422
0.115
-----
-----
0.236
-----
-----
0.140
0.687
0.794
1.020
0.453
0.200
0.460
0.280
-----
0.589
0.063
0.175
Max
1/4 –28 UNF
17.19
-----
-----
10.72
2.93
-----
-----
6.00
-----
-----
3.56
Min
Millimeters
Max
17.44
20.16
25.91
11.50
5.08
11.68
7.00
-----
14.96
1.60
4.45
www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
3
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