NTE159
Silicon PNP Transistor
Audio Amplifier, Switch
(Compl to NTE123AP)
Absolute Maximum Ratings:
Collector-Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Collector-Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter-Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA
Total Device Dissipation (T
A
= 25°C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/°C
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55° to +150°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55° to +150°C
Thermal Resistance, Junction to Case, R
θJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3°C/W
Thermal Resistance, Junction to Ambient, R
θJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200°C/W
Note 1. Matched complementary pairs are available upon request (NTE159MCP). Matched com‐
plementary pairs have their gain specification (h
FE
) matched to within 10% of each other.
Electrical Characteristics:
(T
A
= +25°C unless otherwise specified)
Parameter
OFF Characteristics
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics
(Note 2)
DC Current Gain
h
FE
V
CE
= 10V, I
C
= 100μA
V
CE
= 10V, I
C
= 1mA
V
CE
= 10V, I
C
= 10mA
V
CE
= 10V, I
C
= 100mA
V
CE
= 10V, I
C
= 500mA
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
V
CE(sat)
V
BE(sat)
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
25
40
50
40
30
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
250
-
-
0.15
0.5
0.9
1.1
V
V
V
V
V
(BR)CEO
I
C
= 10mA, I
B
= 0, Note 2
V
(BR)CBO
I
C
= 10μA, I
E
= 0
V
(BR)EBO
I
E
= 10μA, I
C
= 0
I
CBO
I
EBO
V
CB
= 50V, I
E
= 0
V
CB
= 50V, I
E
= 0, T
A
= +75°C
80
80
5
-
-
-
-
-
-
-
-
-
-
-
-
50
5
100
V
V
V
nA
μA
nA
Symbol
Test Conditions
Min
Typ
Max
Unit
Note 2. Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2%.
stm32/stm8
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