GB02SHT03-46
V
RRM
I
F (Tc=25°C)
Q
C
Package
RoHS Compliant
High Temperature Silicon Carbide
Power Schottky Diode
Features
300 V Schottky rectifier
210 °C maximum operating temperature
Zero reverse recovery charge
Superior surge current capability
Positive temperature coefficient of V
F
Temperature independent switching behavior
Lowest figure of merit Q
C
/I
F
Available screened to Mil-PRF-19500
=
=
=
300 V
4A
9 nC
1
2
TO – 46
Advantages
High temperature operation
Improved circuit efficiency (Lower overall cost)
Low switching losses
Ease of paralleling devices without thermal runaway
Smaller heat sink requirements
Industry’s lowest reverse recovery charge
Industry’s lowest device capacitance
Ideal for output switching of power supplies
Best in class reverse leakage current at operating temperature
Applications
Down Hole Oil Drilling
Geothermal Instrumentation
Solenoid Actuators
General Purpose High-Temperature Switching
Amplifiers
Solar Inverters
Switched-Mode Power Supply (SMPS)
Power Factor Correction (PFC)
Maximum Ratings at T
j
= 210 °C, unless otherwise specified
Parameter
Repetitive peak reverse voltage
Continuous forward current
Continuous forward current
RMS forward current
Surge non-repetitive forward current, Half Sine
Wave
Non-repetitive peak forward current
2
I t value
Power dissipation
Operating and storage temperature
Symbol
V
RRM
I
F
I
F
I
F(RMS)
I
F,SM
I
F,max
2
∫i dt
P
tot
T
j
, T
stg
Conditions
T
C
= 25 °C
T
C
≤ 180 °C
T
C
≤ 180 °C
T
C
= 25 °C, t
P
= 10 ms
T
C
= 25 °C, t
P
= 10 µs
T
C
= 25 °C, t
P
= 10 ms
T
C
= 25 °C
Values
300
4
2
4
10
65
0.5
64
-55 to 210
Unit
V
A
A
A
A
A
2
AS
W
°C
Electrical Characteristics at T
j
= 210 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Total capacitive charge
Switching time
Total capacitance
Symbol
V
F
I
R
Q
C
t
s
C
Conditions
I
F
= 1 A, T
j
= 25 °C
I
F
= 1 A, T
j
= 210 °C
V
R
= 300 V, T
j
= 25 °C
V
R
= 300 V, T
j
= 210 °C
I
F
≤ I
F,MAX
V
R
= 300 V
dI
F
/dt = 200 A/μs
V
R
= 300 V
T
j
= 210 °C
V
R
= 1 V, f = 1 MHz, T
j
= 25 °C
V
R
= 300 V, f = 1 MHz, T
j
= 25 °C
min.
Values
typ.
1.6
2.6
1
5
9
< 17
76
15
max.
Unit
V
5
50
µA
nC
ns
pF
Thermal Characteristics
Thermal resistance, junction - case
R
thJC
5.55
°C/W
Mechanical Properties
Mounting torque
M
0.6
Nm
Dec 2014
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-schottky-rectifiers/
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GB02SHT03-46
Figure 1: Typical Forward Characteristics
Figure 2: Typical Reverse Characteristics
Figure 3: Power Derating Curve
Figure 4: Current Derating Curves (D = t
P
/T, t
P
= 400 µs)
(Considering worst case Z
th
conditions )
Figure 5: Current vs Pulse Duration Curves at T
C
= 190 °C
Dec 2014
Figure 6: Transient Thermal Impedance
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Package Dimensions:
TO-46
PACKAGE OUTLINE
GB02SHT03-46
NOTE
1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER.
2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS
Revision History
Date
2014/08/29
Revision
0
Comments
Initial release
Supersedes
Published by
GeneSiC Semiconductor, Inc.
43670 Trade Center Place Suite 155
Dulles, VA 20166
GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice.
GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any
intellectual property rights is granted by this document.
Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft
navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal
injury and/or property damage.
Dec 2014
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-schottky-rectifiers/
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GB02SHT03-46
SPICE Model Parameters
This is a secure document. Copy this code from the SPICE model PDF file on our website into a SPICE
software program for simulation of the GB02SHT03-46.
*
MODEL OF GeneSiC Semiconductor Inc.
*
*
$Revision:
1.0
$
*
$Date:
29-AUG-2014
$
*
*
GeneSiC Semiconductor Inc.
*
43670 Trade Center Place Ste. 155
*
Dulles, VA 20166
*
*
COPYRIGHT (C) 2014 GeneSiC Semiconductor Inc.
*
ALL RIGHTS RESERVED
*
* These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY
* OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED
* TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A
* PARTICULAR PURPOSE."
* Models accurate up to 2 times rated drain current.
*
* Start of GB02SHT03-46 SPICE Model
*
.SUBCKT GB02SHT03ANODE KATHODE
D1 ANODE KATHODE GB02SHT03_25C; Call the Schottky Diode Model
D2 ANODE KATHODE GB02SHT03_PIN; Call the PiN Diode Model
.MODEL GB02SHT03_25C D
+ IS
3.57E-18
RS
0.49751
+ TRS1
0.0057
TRS2
2.40E-05
+ N
1
IKF
322
+ EG
1.2
XTI
3
+ CJO
9.12E-11
VJ
0.371817384
+ M
1.527759838
FC
0.5
+ TT
1.00E-10
BV
300
+ IBV
1.00E-03
VPK
300
+ IAVE
2
TYPE
SiC_Schottky
+ MFG
GeneSiC_Semiconductor
.MODEL GB02SHT03_PIN D
+ IS
5.73E-11
RS
0.72994
+ N
5
IKF
800
+ EG
3.23
XTI
-14
+ FC
0.5
TT
0
+ BV
300
IBV
1.00E-03
+ VPK
300
IAVE
2
+ TYPE
SiC_PiN
.ENDS
*
* End of GB02SHT03 SPICE Model
Dec 2014
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-schottky-rectifiers/
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