Freescale Semiconductor
Technical Data
Document Number: MRF8P26080H
Rev. 0, 12/2010
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA and LTE base station applications with frequencies
from 2500 to 2700 MHz. Can be used in Class AB and Class C for all typical
cellular base station modulation formats.
•
Typical Doherty Single--Carrier W--CDMA Characterization Performance:
V
DD
= 28 Volts, I
DQA
= 300 mA, V
GSB
= 1.3 Vdc, P
out
= 14 Watts Avg., IQ
Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR =
7.5 dB @ 0.01% Probability on CCDF.
Frequency
2570 MHz
2595 MHz
2620 MHz
G
ps
(dB)
15.4
15.2
15.0
η
D
(%)
39.1
38.2
36.9
Output PAR
(dB)
6.8
6.8
6.8
ACPR
(dBc)
--33.6
--36.0
--40.0
MRF8P26080HR3
MRF8P26080HSR3
2500-
-2700 MHz, 14 W AVG., 28 V
W-
-CDMA, LTE
LATERAL N-
-CHANNEL
RF POWER MOSFETs
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 2595 MHz, 109 Watts CW
Output Power (3 dB Input Overdrive from Rated P
out
)
•
Typical P
out
@ 3 dB Compression Point
≃
83 Watts CW
Features
•
Production Tested in a Symmetrical Doherty Configuration
•
100% PAR Tested for Guaranteed Output Power Capability
•
Characterized with Large--Signal Load--Pull Parameters and Common
Source S--Parameters
•
Internally Matched for Ease of Use
•
Integrated ESD Protection
•
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
•
Designed for Digital Predistortion Error Correction Systems
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
For R5 Tape and Reel option, see p. 13.
CASE 465M-
-01, STYLE 1
NI-
-780-
-4
MRF8P26080HR3
CASE 465H-
-02, STYLE 1
NI-
-780S-
-4
MRF8P26080HSR3
RF
inA
/V
GSA
3
1 RF
outA
/V
DSA
RF
inB
/V
GSB
4
2 RF
outB
/V
DSB
(Top View)
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
CW Operation @ T
C
= 25°C
Derate above 25°C
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
CW
Value
--0.5, +65
--6.0, +10
32, +0
--65 to +150
150
225
140
1.26
Unit
Vdc
Vdc
Vdc
°C
°C
°C
W
W/°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
©
Freescale Semiconductor, Inc., 2010. All rights reserved.
MRF8P26080HR3 MRF8P26080HSR3
1
RF Device Data
Freescale Semiconductor
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 77°C, 14 W CW, 28 Vdc, I
DQA
= 300 mA, V
GSB
= 1.3 Vdc, 2620 MHz
Case Temperature 90°C, 80 W CW
(3)
, 28 Vdc, I
DQA
= 300 mA, V
GSB
= 1.3 Vdc, 2620 MHz
Symbol
R
θJC
Value
(1,2)
0.88
0.56
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
2 (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
(4)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
(4)
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 75
μAdc)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
DA
= 300 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 0.75 Adc)
V
GS(th)
V
GS(Q)
V
DS(on)
1.0
1.9
0.1
1.8
2.6
0.23
2.5
3.4
0.3
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(5,6)
(In Freescale Doherty Production Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQA
= 300 mA, V
GSB
= 1.3 Vdc,
P
out
= 14 W Avg., f = 2620 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
ACPR measured on 3.84 MHz Channel Bandwidth @
±5
MHz Offset.
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
G
ps
η
D
PAR
ACPR
13.8
34.0
6.4
—
15.0
36.9
6.8
--40.0
16.8
—
—
--33.0
dB
%
dB
dBc
Typical Broadband Performance
(6)
(In Freescale Doherty Characterization Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQA
= 300 mA,
V
GSB
= 1.3 Vdc, P
out
= 14 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on
CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @
±5
MHz Offset.
Frequency
2570 MHz
2595 MHz
2620 MHz
G
ps
(dB)
15.4
15.2
15.0
η
D
(%)
39.1
38.2
36.9
Output PAR
(dB)
6.8
6.8
6.8
ACPR
(dBc)
--33.6
--36.0
--40.0
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf. Select
Documentation/Application Notes -- AN1955.
3. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
4. Each side of device measured separately.
5. Part internally matched both on input and output.
6. Measurement made with device in a Symmetrical Doherty configuration.
(continued)
MRF8P26080HR3 MRF8P26080HSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances
(1)
(In Freescale Doherty Characterization Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQA
= 300 mA,
V
GSB
= 1.3 Vdc, 2570--2620 MHz Bandwidth
P
out
@ 1 dB Compression Point, CW
P
out
@ 3 dB Compression Point, CW
IMD Symmetry @ 12 W PEP, P
out
where IMD Third Order
Intermodulation
30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 50 MHz Bandwidth @ P
out
= 14 W Avg.
Gain Variation over Temperature
(--30°C to +85°C)
Output Power Variation over Temperature
(--30°C to +85°C)
1. Measurement made with device in a Symmetrical Doherty configuration.
P1dB
P3dB
IMD
sym
—
—
—
54
83
40
—
—
—
W
W
MHz
VBW
res
G
F
∆G
∆P1dB
—
—
—
—
70
0.5
0.01
0.002
—
—
—
—
MHz
dB
dB/°C
dB/°C
MRF8P26080HR3 MRF8P26080HSR3
RF Device Data
Freescale Semiconductor
3
C17
C9
V
GA
C1
C3
CUT OUT AREA
Z1
C
C15
C5
C7
R2
C11
V
DA
C13
MRF8S26080H
Rev. 3A
P
C16
C6
R1
C4
V
GB
C10
R3
C2
C8
C14
V
DB
C12
C18
Figure 2. MRF8P26080HR3(HSR3) Test Circuit Component Layout
Table 5. MRF8P26080HR3(HSR3) Test Circuit Component Designations and Values
Part
C1, C2, C3, C4, C5, C6, C7, C8
C9, C10
C11, C12
C13, C14
C15, C16
C17, C18
R1
R2, R3
Z1
PCB
Description
22 pF Chip Capacitors
3.3
μF,
50 V Chip Capacitors
10
μF,
50 V Chip Capacitors
4.7
μF,
50 V Chip Capacitors
0.6 pF Chip Capacitors
330
μF,
35 V Electrolytic Capacitors
50
Ω,
8 W Chip Resistor
4.75
Ω,
1/4 W Chip Resistors
2500 MHz Band 90°, 3 dB Chip Hybrid Coupler
0.020″,
ε
r
= 3.5
Part Number
ATC600F220JT250XT
GRM32DR71H335KA88B
GRM55DR61H106KA88L
GRM31CR71H475KA12L
ATC600F0R6BT250XT
MCGPR35V337M10x16--RH
060120A15Z50--2
CRCW12064R75FNEA
GSC356--HYB2500
RF35A2
Manufacturer
ATC
Murata
Murata
Murata
ATC
Multicomp
Anaren
Vishay
Soshin
Taconic
Single--ended
λ
λ
4
4
Quadrature combined
λ
4
Doherty
λ
2
λ
2
Push--pull
Figure 3.
Possible Circuit Topologies
MRF8P26080HR3 MRF8P26080HSR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
V
DD
= 28 Vdc, P
out
= 14 W (Avg.)
I
DQA
= 300 mA, V
GSB
= 1.3 Vdc
Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
η
D
G
ps
η
D
, DRAIN
EFFICIENCY (%)
--0.5
ACPR (dBc)
--0.9
--1.1
--1.3
--1.5
PARC (dB)
ACPR (dBc)
--0.7
--10
--15
--20
--25
--30
--35
--40
η
D
,
DRAIN EFFICIENCY (%)
16
15.5
15
G
ps
, POWER GAIN (dB)
14.5
14
13.5
13
12.5
12
11.5
11
2570
2590
2610
2630
2650
2670
PARC
2690
2710
ACPR
45
40
35
30
25
--25
--30
--35
--40
--45
--50
2730
f, FREQUENCY (MHz)
Figure 4. Output Peak- -Average Ratio Compression (PARC)
-to-
Broadband Performance @ P
out
= 14 Watts Avg.
--20
--30
IM3--L
IM3--U
V
DD
= 28 Vdc, P
out
= 12 W (PEP), I
DQA
= 300 mA
--40 V
GSB
= 1.3 Vdc, Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2595 MHz
--50
--60
--70
IM5--U
IMD, INTERMODULATION DISTORTION (dBc)
IM5--L
IM7--L
10
IM7--U
1
100
TWO--TONE SPACING (MHz)
Figure 5. Intermodulation Distortion Products
versus Two-
-Tone Spacing
17
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
16
G
ps
, POWER GAIN (dB)
15
14
13
12
11
0
--1
--2
--3
--2 dB = 20.5 W
--4
--5
ACPR
--6
5
15
25
35
PARC
45
--3 dB = 26.5 W
G
ps
70
60
50
40
30
20
10
55
V
DD
= 28 Vdc, I
DQA
= 300 mA, V
GSB
= 1.3 Vdc
f = 2595 MHz, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF
--1 dB = 15.5 W
η
D
P
out
, OUTPUT POWER (WATTS)
Figure 6. Output Peak- -Average Ratio
-to-
Compression (PARC) versus Output Power
MRF8P26080HR3 MRF8P26080HSR3
RF Device Data
Freescale Semiconductor
5
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