MURTA50060 thru MURTA500120R
Silicon Super Fast
Recovery Diode
Features
• High Surge Capability
• Types from 600 V to 1200 V V
RRM
• Isolation Type Package
• Electrically Isolated Base Plate
• Not ESD Sensitive
Heavy Three Tower Package
V
RRM
= 600 V - 1200 V
I
F(AV)
= 500 A
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
Symbol
V
RRM
V
RMS
V
DC
T
j
T
stg
Conditions
MURTA50060(R)
600
424
600
-55 to 150
-55 to 150
MURTA500120(R)
1200
---
1200
-55 to 150
-55 to 150
Unit
V
V
V
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Average forward current (per pkg)
Peak forward surge current (per leg)
Maximum instantaneous forward
voltage (per leg)
Maximum instantaneous reverse
current at rated DC blocking voltage
(per leg)
Maximum reverse recovery time (per
leg)
Symbol
I
F(AV)
I
FSM
V
F
I
R
T
rr
Conditions
T
C
= 100 °C
t
p
= 8.3 ms, half sine
I
FM
= 250 A, T
j
= 25 °C
T
j
= 25 °C
T
j
= 125 °C
I
F
=0.5 A, I
R
=1.0 A,
I
RR
= 0.25 A
MURTA50060(R)
500
3800
1.7
25
5
250
MURTA500120(R)
500
3800
2.6
25
5
250
Unit
A
A
V
μA
mA
ns
Thermal characteristics
Maximum thermal resistance, junction -
case (per leg)
R
ΘJC
0.30
0.30
°C/W
www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/
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MURTA50060 thru MURTA500120R
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/
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