MURH7040 thru MURH7060R
Silicon Super Fast
Recovery Diode
Features
• High Surge Capability
• Types from 400 V to 600 V V
RRM
• Not ESD Sensitive
D-67 Package
V
RRM
= 400 V - 600 V
I
F(AV)
= 70 A
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
Symbol
V
RRM
V
RMS
V
DC
T
j
T
stg
Conditions
MURH7040(R)
400
280
400
-55 to 150
-55 to 150
MURH7060(R)
600
420
600
-55 to 150
-55 to 150
Unit
V
V
V
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Average forward current (per pkg)
Peak forward surge current
Maximum instantaneous forward
voltage
Maximum reverse current at rated
DC blocking voltage
Maximum reverse recovery time
Symbol
I
F(AV)
I
FSM
V
F
I
R
T
rr
Conditions
T
C
= 125 °C
t
p
= 8.3 ms, half sine
I
FM
= 70 A, T
j
= 25 °C
T
j
= 25 °C
T
j
= 125 °C
I
F
=0.5 A, I
R
=1.0 A,
I
RR
= 0.25 A
MURH7040(R)
70
1500
1.30
25
3
90
MURH7060(R)
70
1500
1.70
25
3
110
Unit
A
A
V
μA
mA
nS
Thermal characteristics
Maximum thermal resistance,
junction - case
R
ΘJC
0.60
0.60
°C/W
www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/
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MURH7040 thru MURH7060R
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/
3
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