MURF20040 thru MURF20060R
Silicon Super Fast
Recovery Diode
Features
• High Surge Capability
• Types from 400 V to 600 V V
RRM
• Not ESD Sensitive
TO-244 Package
V
RRM
= 400 V - 600 V
I
F(AV)
= 200 A
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
Symbol
V
RRM
V
RMS
V
DC
T
j
T
stg
Conditions
MURF20040(R)
400
280
400
-55 to 150
-55 to 150
MURF20060(R)
600
420
600
-55 to 150
-55 to 150
Unit
V
V
V
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Average forward current (per pkg)
Peak forward surge current (per leg)
Maximum instantaneous forward
voltage (per leg)
Maximum reverse current at rated DC
blocking voltage (per leg)
Maximum reverse recovery time (per
leg)
Symbol
I
F(AV)
I
FSM
V
F
I
R
T
rr
Conditions
T
C
= 140 °C
t
p
= 8.3 ms, half sine
I
FM
= 100 A, T
j
= 25 °C
T
j
= 25 °C
T
j
= 125 °C
I
F
=0.5 A, I
R
=1.0 A,
I
RR
= 0.25 A
MURF20040(R)
200
2000
1.30
25
3
90
MURF20060(R)
200
2000
1.70
25
3
110
Unit
A
A
V
μA
mA
nS
Thermal characteristics
Maximum thermal resistance, junction -
case (per leg)
R
ΘJC
0.45
0.45
°C/W
www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/
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MURF20040 thru MURF20060R
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/
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