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GBU1001-G

产品描述RECT BRIDGE GPP 1000V 10A GBU
产品类别半导体    分立半导体   
文件大小424KB,共3页
制造商ETC2
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GBU1001-G概述

RECT BRIDGE GPP 1000V 10A GBU

RECT 桥 GPP 1000V 10A GBU

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Glass Passivated Bridge Rectifiers
COMCHIP
GBU10005-G Thru. GBU1010-G
Reverse Voltage: 50 to 1000V
Forward Current: 10A
RoHS Device
Features
-Surge overload rating - 220 amperes peak.
-Ideal for printed circuit board.
0.437(11.1)
0.430(10.9)
GBU
0.874(22.2)
0.860(21.8)
0.126(3.2)*45
°
0.139(3.53)
0.133(3.37)
Chamfer
Mechanical Data
-Epoxy: U/L 94-V0 rate flame retardant.
-Case: Molded plastic, GBU
-Mounting position: Any
-Weight: 3.91grams
(approx.).
0.161(4.1)
0.134(3.4)
0.752(19.1)
0.720(18.3)
0.073(1.85)
0.057(1.45)
0.232(5.90)
0.213(5.40)
0.401(10.2)
0.392(9.80)
0.720(18.29)
0.680(17.27)
0.047(1.2)
0.035(0.9)
0.210(5.3)
0.190(4.8)
0.210(5.3)
0.190(4.8)
0.100(2.54)
0.085(2.16)
0.080(2.03)
0.065(1.65)
0.106(2.7)
0.091(2.3)
0.022(0.56)
0.018(0.46)
0.210(5.3)
0.190(4.8)
Dimensions in inches and (millimeter)
Maximum ratings and electrical characteristics
Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
O
Parameter
Maximum reverse peak repetitive voltage
Maximum RMS bridge input voltage
Maximum DC blocking voltage
Maximum average forward (With heatsink Note2)
rectified current @Tc=100°C (without hestsink)
Symbol
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
GBU
10005-G
50
35
50
GBU
1001-G
100
70
100
GBU
1002-G
200
140
200
GBU
1004-G
400
280
400
10.0
3.0
220
1.0
10.0
500
200
70
2.2
-55 to +150
-55 to +150
GBU
1006-G
600
420
600
GBU
1008-G
800
560
800
GBU
1010-G
1000
700
1000
Unit
V
V
V
A
A
Peak forward surage current ,
8.3ms single half sine-wave
Super imposed on rated load (JEDEC Method)
Maximum forward voltage at 5.0A DC
Maximum DC reverse current
at rate DC blocking voltage
I T rating for fusing (t<8.3ms)
Typical junction capacitance per element (Note 1)
Typical thermal resistance
T
Operating temperature range
Storage temperature range
2
V
F
I
R
It
C
J
R
θJC
T
J
T
STG
2
V
μA
As
pF
°C/W
°C
°C
2
@T
J
=25°C
@T
J
=125°C
Notes:
1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Device mounted on 100mm*100mm*1.6mm Cu plate heatsink.
Company reserves the right to improve product design , functions and reliability without notice.
QW-BBR84
REV:A
Page 1
Comchip Technology CO., LTD.

GBU1001-G相似产品对比

GBU1001-G GBU1004-G GBU1006-G GBU1010-G GBU10005-G GBU1002-G GBU1008-G
描述 RECT BRIDGE GPP 1000V 10A GBU RECT BRIDGE GPP 1000V 10A GBU RECT BRIDGE GPP 1000V 10A GBU RECT BRIDGE GPP 1000V 10A GBU RECT BRIDGE GPP 1000V 10A GBU RECT BRIDGE GPP 1000V 10A GBU RECT BRIDGE GPP 1000V 10A GBU

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