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GBJ1005

产品描述10 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
产品类别半导体    分立半导体   
文件大小63KB,共2页
制造商Goodwork Semiconductor ( GW )
官网地址http://www.goodwork.com.tw/
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GBJ1005概述

10 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE

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GBJ1001
THRU
GBJ1007
SINGLE PHASE 10.0 AMP BRIDGE RECTIFIERS
VOLTAGE RANGE
50 to 1000 Volts
CURRENT
10.0 Amperes
GBJ
1.193(30.3)
1.169(29.7)
.134(3.4)
.122(3.1)
.189(4.8)
.173(4.4)
.150(3.8)
.134(3.4)
.441(11.2)
.425(10.8)
FEATURES
* Ideal for printed circuit board
* Low forward voltage
* Low leakage current
* Mounting position: Any
.094(2.4)
.078(2.0)
.043(1.1)
.035(0.9)
~
~
.165(4.2)
.142(3.6)
.708(18.0)
.669(17.0)
.800(20.3)
.776(19.7)
.189
(4.8)
.402(10.2) .303(7.7) .303(7.7)
SPACING
.386(9.8) .287(7.3) .287(7.3)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature uniess otherwies specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
+
.114(2.9)
.098(2.5)
.031(0.8)
.023(0.6)
Dimensions in inches and (millimeters)
TYPE NUMBER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward (with heatsink Note 2)
Rectified Current at Tc=100 C (Without heatsink)
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Forward Voltage Drop per Bridge Element at 5.0A D.C.
Maximum DC Reverse Current
Ta=25 C
at Rated DC Blocking Voltage
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance R
JC
(Note 2)
Operating Temperature Range, T
J
Storage Temperature Range, T
STG
NOTES:
GBJ1001 GBJ1002 GBJ1003 GBJ1004 GBJ1005 GBJ1006 GBJ1007
UNITS
V
V
V
A
A
A
V
A
A
PF
C/W
C
C
50
35
50
100
70
100
200
140
200
400
280
400
10.0
3.0
220
1.1
5.0
500
55
2.3
-55 +150
-55 +150
600
420
600
800
560
800
1000
700
1000
Ta=100 C
1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Thermal Resistance from Junction to Case with device mounted on 150mm x 150mm x 1.6mm Cu Plate Heatsink.
304

GBJ1005相似产品对比

GBJ1005 GBJ1003 GBJ1004 GBJ1001 GBJ1002 GBJ1006 GBJ1007
描述 10 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 10 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 10 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 3 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 3 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 3 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 10 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
Reach Compliance Code - unknown unknow unknow unknow unknow -
配置 - BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS -
二极管类型 - BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE -
最大正向电压 (VF) - 1.05 V 1.05 V 1.05 V 1.05 V 1.05 V -
最大非重复峰值正向电流 - 170 A 170 A 170 A 170 A 170 A -
元件数量 - 4 4 4 4 4 -
最高工作温度 - 150 °C 150 °C 150 °C 150 °C 150 °C -
最大输出电流 - 3 A 3 A 3 A 3 A 3 A -
最大重复峰值反向电压 - 200 V 400 V 50 V 100 V 800 V -
表面贴装 - NO NO NO NO NO -

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