桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GMBTA44(销售型號 MMBTA44)
■
FEATURES
特點
NPN High Voltage Transistor
■
MAXIMUM RATINGS
最大額定值
Symbol
符號
V
CEO
V
CBO
V
EBO
Ic
P
D
T
J
,
T
stg
Rating
額定值
400
400
7
200
225
-55to+125
Unit
單½
V
V
V
mA
mW
℃
Characteristic
特性參數
Collector-Emitter Voltage
集電極-射極電壓
Collector-Base Voltage
集電極-極電壓
Emitter-Base Voltage
發射極-基極電壓
Collector Current
集電極電流
Device Dissipation
耗散功率
Junction and Storage Temperature
結溫和儲存溫度
■
ELECTRICAL CHARACTERISTICS
電特性
)
(T
A
=25
=25℃ unless otherwise noted
如無特殊說明，溫度爲
25℃)
Characteristic
特性參數
Collector-Emitter Breakdown Voltage
集電極-射極擊穿電壓(I
C
=1mA,I
B
=0)
Collector-Base Breakdown Voltage
集電極-基極擊穿電壓(I
C
=100µA,I
E
=0)
Emitter-Base Breakdown Voltage
發射極-基極擊穿電壓(I
E
= 100µA ,I
C
=0)
Collector Cutoff Current
集電極截止電流
(V
CB
=300VI
E
=0)
DC Current Gain
直流電流增益
(I
c
=10mA,V
CE
=10.0V)
Collector-Emitter Saturation Voltage
集電極-發射極½和壓降
(I
c
=100mA, I
B
=10mA)
Current-Gain-Bandwidth Product
電流增益帶寬乘積
(I
c
=10mA,V
CE
=20V,f=30MHz)
Symbol
符號
Min
最小值
Max
最大值
Unit
單½
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
H
FE
V
CE(sat)
400
400
7
__
40
—
—
__
—
500
300
0.5
V
V
V
nA
—
V
f
T
50
__
MHz
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