Silizium-Fotodiode
Silicon Photodiode
BPW 33
0.6
0.4
1.2
0.7
0.8
0.6
Cathode marking
4.0
3.7
5.4
4.9
4.5
4.3
Chip position
0.6
0.4
0.8
0.6
0.5
0.3
0.35
0.2
0.6
0.4
0 ... 5˚
5.08 mm
spacing
Photosensitive area
2.65 mm x 2.65 mm
GEO06643
1.8
1.4
3.5
3.0
0.6
0.4
2.2
1.9
Approx. weight 0.1 g
Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Wesentliche Merkmale
q
Speziell geeignet für Anwendungen im
Bereich von 350 nm bis 1100 nm
q
Sperrstromarm (typ. 20 pA)
q
DIL-Plastikbauform mit hoher
Packungsdichte
Anwendungen
q
Belichtungsmesser
q
Farbanalyse
Features
q
Especially suitable for applications from
350 nm to 1100 nm
q
Low reverse current (typ. 20 pA)
q
DIL plastic package with high packing
density
Applications
q
Exposure meters
q
Color analysis
Typ
Type
BPW 33
Bestellnummer
Ordering Code
Q62702-P76
Semiconductor Group
1
1997-11-19
feo06643
BPW 33
Grenzwerte
Maximum Ratings
Bezeichnung
Description
Betriebs- und Lagertemperatur
Operating and storage temperature range
Sperrspannung
Reverse voltage
Verlustleistung,
T
A
= 25
°C
Total power dissipation
Symbol
Symbol
Wert
Value
– 40 ... + 85
7
150
Einheit
Unit
°C
V
mW
T
op
;
T
stg
V
R
P
tot
Kennwerte
(
T
A
= 25
°C,
Normlicht A,
T
= 2856 K)
Characteristics
(
T
A
= 25
°C,
standard light A,
T
= 2856 K)
Bezeichnung
Description
Fotoempfindlichkeit,
V
R
= 5 V
Spectral sensitivity
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
Spektraler Bereich der Fotoempfindlichkeit
S
= 10 % von
S
max
Spectral range of sensitivity
S
= 10 % of
S
max
Bestrahlungsempfindliche Fläche
Radiant sensitive area
Abmessung der bestrahlungsempfindlichen
Fläche
Dimensions of radiant sensitive area
Abstand Chipoberfläche zu Gehäuseober-
fläche
Distance chip front to case surface
Halbwinkel
Half angle
Dunkelstrom,
V
R
= 1 V
Dark current
Nullpunktsteilheit,
E
= 0
Zero crossover
Symbol
Symbol
Wert
Value
75 (≥ 35)
800
350 ... 1100
Einheit
Unit
nA/Ix
nm
nm
S
λ
S max
λ
A
L
×
B
L
×
W
H
7.34
2.71
×
2.71
mm
2
mm
×
mm
0.5
mm
ϕ
±
60
20 (≤ 100)
≤
2.5
Grad
deg.
pA
pA/mV
I
R
S
0
Semiconductor Group
2
1997-11-19
BPW 33
Kennwerte
(
T
A
= 25
°C,
Normlicht A,
T
= 2856 K)
Characteristics
(
T
A
= 25
°C,
standard light A,
T
= 2856 K) (cont’d)
Bezeichnung
Description
Spektrale Fotoempfindlichkeit,
λ
= 850 nm
Spectral sensitivity
Quantenausbeute,
λ
= 850 nm
Quantum yield
Leerlaufspannung,
E
v
= 1000 Ix
Open-circuit voltage
Kurzschlußstrom,
E
v
= 1000 Ix
Short-circuit current
Anstiegs- und Abfallzeit des Fotostromes
Rise and fall time of the photocurrent
R
L
= 1 kΩ;
V
R
= 5 V;
λ
= 850 nm;
I
p
= 70
µA
Durchlaßspannung,
I
F
= 100 mA,
E
= 0
Forward voltage
Kapazität,
V
R
= 0 V,
f
= 1 MHz,
E
= 0
Capacitance
Temperaturkoeffizient von
V
O
Temperature coefficient of
V
O
Temperaturkoeffizient von
I
SC
Temperature coefficient of
I
SC
Rauschäquivalente Strahlungsleistung
Noise equivalent power
V
R
= 1 V,
λ
= 850 nm
Nachweisgrenze,
V
R
= 1 V,
λ
= 850 nm
Detection limit
Symbol
Symbol
Wert
Value
0.59
0.86
440 (≥ 375)
72
1.5
Einheit
Unit
A/W
Electrons
Photon
mV
µA
µs
S
λ
η
V
O
I
SC
t
r
,
t
f
V
F
C
0
TC
V
TC
I
NEP
1.3
630
– 2.6
0.2
4.3
×
10
– 15
V
pF
mV/K
%/K
W
√Hz
cm ·
√Hz
W
D*
6.3
×
10
13
Semiconductor Group
3
1997-11-19
BPW 33
Relative spectral sensitivity
S
rel
=
f
(λ)
100
OHF00062
Photocurrent
I
P
=
f
(E
v
),
V
R
= 5 V
Open-circuit voltage
V
O
=
f
(E
v
)
Ι
P
10
3
µ
A
OHF01064
Total power dissipation
P
tot
=
f
(T
A
)
10
4
mV
S
rel
%
80
V
O
10
3
160
mW
P
tot
140
120
100
OHF00958
10
2
V
O
60
10
1
40
10
2
80
60
Ι
P
10
0
20
10
1
40
20
0
400
600
800
1000 nm 1200
λ
10
-1 0
10
10
0
10
1
10
2
10
3
lx 10
4
0
0
20
40
60
E
e
80 ˚C 100
T
A
Dark current
I
R
=
f
(V
R
),
E
= 0
80
OHF00073
Capacitance
C
=
f
(V
R
),
f
= 1 MHz,
E
= 0
1000
OHF01065
Dark current
I
R
=
f
(T
A
),
V
R
= 1 V,
E
= 0
Ι
R
10
4
pA
OHF00075
Ι
R
pA
60
C
pF
800
700
600
10
3
40
500
400
300
10
2
20
200
100
10
1
0
0
1
2
3
4
5
6
7
8
V 10
0
-2
10
10
-1
10
0
10
1
V 10
2
10
0
0
20
40
60
V
R
V
R
80 ˚C 100
T
A
Directional characteristics
S
rel
=
f
(ϕ)
40
30
20
10
ϕ
0
1.0
OHF01402
50
0.8
60
0.6
70
0.4
80
0.2
0
90
100
1.0
0.8
0.6
0.4
0
20
40
60
80
100
120
Semiconductor Group
4
1997-11-19
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