Datasheet> 器件分类 > 半导体> 分立半导体> BC337_15

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BC337_15: 产品描述800 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92; 产品类别半导体分立半导体; 文件大小794KB，共2页; 制造商KEXIN; 官网地址http://www.kexin.com.cn/html/index.htm

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BC337_15概述

800 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92

800 mA, 45 V, NPN, 硅, 小信号晶体管, TO-92

BC337_15规格参数

参数名称	属性值
端子数量	3
晶体管极性	NPN
最大集电极电流	0.8000 A
最大集电极发射极电压	45 V
状态	ACTIVE
包装形状	ROUND
包装尺寸	CYLINDRICAL
端子形式	WIRE
端子位置	BOTTOM
包装材料	PLASTIC/EPOXY
结构	SINGLE
元件数量	1
晶体管应用	SWITCHING
晶体管元件材料	SILICON
最大环境功耗	0.6250 W
晶体管类型	GENERAL PURPOSE SMALL SIGNAL
最小直流放大倍数	100
额定交叉频率	100 MHz

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DIP Type

NPN Transistors

BC337

(KC337)

TO-92

4.58

–0.15

+0.25

Transistors

Unit: mm

■

Features

●

Collector Emitter Voltage V

CEO

=45V

●

Complement to BC327.

14.47

0.40

●

Collector Current Capability I

=0.5A

0.46

0.10

1.27TYP

[1.27

0.20

]

1 2 3

3.60

0.20

4.58

0.20

1.27TYP

[1.27

0.20

]

0.38

–0.05

+0.10

0.38

–0.05

(R2.29)

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Collector Current - Pulse

Base Current - Pulse

Collector Power Dissipation

Thermal Resistance From Junction to Ambient

Junction Temperature

Storage Temperature Range

Symbol

CBO

CEO

EBO

θJA

stg

Rating

500

200

625

0.2

150

-65 to 150

1.02

1. Emitter

2. Base

3. Collector

3.86MAX

0.10

+0.10

Unit

℃/mw

℃

■

Electrical Characteristics Ta = 25℃

Parameter

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

Collector-emitter saturation voltage

Base - emitter saturation voltage

Base - emitter voltage

BC337

DC current gain

BC337-16

BC337-25

BC337-40

DC current gain

Collector output capacitance

Transition frequency

= 1V, I

= 500mA

= 10V, I

=ie=0,f=1MHz

= 5V, I

= 10mA,f=100MHz

100

= 1V, I

= 100mA

Symbol

CBO

CEO

EBO

CBO

EBO

CE(sat)

BE(sat)

Test Conditions

Ic= 100 μA， I

= 0

Ic= 1 mA， I

= 0

= 100μA， I

= 0

= 50 V , I

= 0

= 50 V , I

= 0 , T

= 150℃

= 5V , I

=500 mA, I

=50mA

= 500 mA, I

= 50mA

= 1V, I

= 500mA

100

160

250

MHz

Min

0.1

0.7

1.2

600

250

400

600

Typ

Max

Unit

(0.25)

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BC337_15相似产品对比

	BC337_15	BC337	BC337-16	BC337-25
描述	800 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92	800 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92	NPN general purpose transistor	800 mA, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
端子数量	3	3	-	3
晶体管极性	NPN	NPN	-	NPN
最大集电极电流	0.8000 A	0.8000 A	-	0.8000 A
状态	ACTIVE	ACTIVE	-	CONSULT MFR
包装形状	ROUND	ROUND	-	圆
包装尺寸	CYLINDRICAL	CYLINDRICAL	-	圆柱形的
端子形式	WIRE	WIRE	-	THROUGH-孔
端子位置	BOTTOM	BOTTOM	-	BOTTOM
包装材料	PLASTIC/EPOXY	PLASTIC/EPOXY	-	塑料/环氧树脂
结构	SINGLE	SINGLE	-	单一的
元件数量	1	1	-	1
晶体管元件材料	SILICON	SILICON	-	硅
晶体管类型	GENERAL PURPOSE SMALL SIGNAL	GENERAL PURPOSE SMALL SIGNAL	-	通用小信号
最小直流放大倍数	100	100	-	40
额定交叉频率	100 MHz	100 MHz	-	200 MHz

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