SMD Type
PNP Transistors
CZT2955
(KZT2955)
SOT-223
6.50±0.2
3.00±0.1
Transistors
Unit:mm
。
10
■
Features
7.0±0.3
4
3.50±0.2
●
High Current
●
Low Voltage
●
Surface Mounted Power Amplifier Application
●
Complement to CZT3055
1
2
3
2.30 (typ)
1.80 (max)
0.250
Gauge Plane
0.02 ~ 0.1
1.Base
2.Collector
0.70±0.1
4.60 (typ)
3.Emitter
4.Collector
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
T
stg
Rating
-100
-60
-7
-6
1
125
150
-55 to 150
A
W
℃/W
℃
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base-emitter voltage
DC current gain
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
I
CEV
I
EBO
V
CE(sat)
V
BE(sat)
V
BE
h
FE(1)
h
FE(2)
f
T
Test Conditions
Ic= -1mA， I
E
= 0
Ic= -30 mA， I
B
= 0
Ic= -30 mA， I
B
= 0 , R
BE
=100Ω
I
E
= -1 mA， I
C
= 0
V
CB
= -100 V , I
B
= 0
V
CE
= -30 V , I
E
= 0
V
CE
= -100 V , V
EB
= 1.5V
V
EB
= -5V , I
C
=0
I
C
=-4 A, I
B
=-400mA
I
C
=-4 A, I
B
=-400mA
V
CE
= -44V, I
C
= -4A
V
CE
= -4V, I
C
= -4A
V
CE
= -4V, I
C
= -6A
V
CE
= -10V, I
C
= -500mA,f=1MHz
20
5
2.5
MHz
Min
-100
-60
-70
-7
-100
-700
-1
-5
-1.1
-1.2
-1.5
70
V
uA
mA
mA
V
Typ
Max
Unit
www.kexin.com.cn
1
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
