SMD Type
NPN Transistors
Transistors
MMBT3904
(K MBT3904)
SOT-23-3
+0.2
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
3
+0.2
2.8
-0.1
●
Marking:1AM
1
2
0.55
●
Complementary to MMBT3906
+0.2
1.6
-0.1
Features
0.4
0.95
+0.1
-0.1
+0.1
1.9
-0.2
+0.02
0.15
-0.02
+0.2
1.1
-0.1
1. Base
2. Emitter
+0.1
0.68
-0.1
0-0.1
3. Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Rating
60
40
6
0.2
0.2
150
-55 to 150
Unit
V
V
V
A
W
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector- emitter cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEX
I
EBO
V
CE(sat)
V
BE(sat)
hfe（1）
DC current gain
Delay time
Rise time
Storage time
Fall time
hfe（2）
hfe（3）
t
d
t
r
t
s
t
f
Test Conditions
Ic= 100 μA， I
E
= 0
Ic= 1 mA， I
B
= 0
I
E
= 100μA， I
C
= 0
V
CB
= 60 V , I
E
= 0
V
CE
= 30 V , V
EB(off）
=- 3V
V
EB
= 5V , I
C
=0
I
C
= 10 mA, I
B
= 1mA
I
C
= 50 mA, I
B
= 5mA
I
C
= 10 mA, I
B
= 1mA
I
C
= 50 mA, I
B
= 5mA
V
CE
= 1V, I
C
= 10mA
V
CE
= 1V, I
C
= 50mA
V
CE
= 1V, I
C
= 100mA
V
CC
= 3V, V
BE(off)
=- 0.5V
I
C
= 10mA, I
B1
= 1mA
V
CC
= 3V, I
C
= 10mA
I
B1
=I
B2
= 1mA
100
60
30
35
35
200
50
ns
0.65
Min
60
40
6
100
50
100
0.2
0.3
0.85
0.95
400
V
nA
V
Typ
Max
Unit
Collector input capacitance
Collector output capacitance
Transition frequency
C
ib
C
ob
f
T
V
EB
= 0.5V, I
E
= 0,f=1MHz
V
CB
= 5V, I
E
= 0,f=1MHz
V
CE
= 20V, I
C
= 10mA,f=100MHz
300
8
4
pF
MHz
■
Classification of h
fe(1)
Type
Range
MMBT3904
100-300
MMBT3904-L MMBT3904-H MMBT3904-J
100-200
200-300
300-400
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1
SMD Type
MMBT3904
Typical Characteristics
100
Transistors
(K MBT3904)
400
Static Characteristic
500uA
450uA
400uA
350uA
300uA
250uA
COMMON
EMITTER
T
a
=25
℃
h
FE
——
I
C
COMMON EMITTER
V
CE
=1V
(mA)
80
I
C
COLLECTOR CURRENT
60
DC CURRENT GAIN
h
FE
300
T
a
=100
℃
200
T
a
=25
℃
40
200uA
150uA
20
100uA
I
B
=50uA
100
0
0
4
8
12
16
20
0
0.1
0.3
1
3
10
30
100
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
600
V
CEsat
——
I
C
1.2
V
BEsat
——
I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
300
T
a
=25
℃
0.8
.
T
a
=100
℃
100
T
a
=100
℃
T
a
=25
℃
0.4
30
β=10
10
1
3
10
30
100
200
0.0
1
3
10
30
100
β=10
300
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
100
I
C
COMMON EMITTER
V
CE
=1V
—— V
BE
9
C
ob
/ C
ib
——
V
CB
/ V
EB
f=1MHz
I
E
=0/I
C
=0
(mA)
30
10
COLLECTOR CURRENT
CAPACITANCE
C
(pF)
I
C
T
a
=100
℃
C
ib
T
a
=25
℃
3
3
1
T
a
=25
℃
C
ob
0.3
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1
0.1
0.3
1
3
10
20
BASE-EMMITER VOLTAGE V
BE
(V)
300
REVERSE VOLTAGE
V
(V)
f
T
T
a
=25
℃
V
CE
=20V
——
I
C
250
P
C
——
T
a
(MHz)
COLLECTOR POWER DISSIPATION
P
C
(mW)
1
10
200
f
T
TRANSITION FREQUENCY
200
150
100
50
100
3
30
60
0
0
25
50
75
100
125
150
COLLECTOR CURRENT
I
C
(mA)
AMBIENT TEMPERATURE
T
a
(
℃
)
2
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