SMD Type
NPN Transistors
BCW66
(KCW66)
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
Unit: mm
■
Features
+0.1
2.4
-0.1
and H according to DC current gain
●
Complementary to BCW68
+0.1
1.3
-0.1
●
BCW66 is subdivided into three groups F,G
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1.Base
2.Emitter
+0.1
0.38
-0.1
0-0.1
3.collector
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Rating
75
45
5
800
200
150
-55 to 150
mA
mW
℃
V
Unit
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SMD Type
NPN Transistors
BCW66
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage (Note.1)
Base - emitter saturation voltage (Note.1)
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE(1)
V
CE
= 1V, I
C
= 10mA
h
FE(2)
DC current gain
h
FE(3)
V
CE
= 2V, I
C
= 500mA
h
FE(4)
Collector output capacitance
Collector input capacitance
Noise figure
Transition frequency
C
ob
C
ib
NF
f
T
V
CB
= 10V, I
E
= 0,f=1MHz
V
EB
= 0.5V, I
C
= 0,f=1MHz
V
CE
= 5V, I
C
= 0.2mA
R
S
=1KΩ,BW=200Hz
V
CE
= 10V, I
C
= 20mA,f=100MHz
V
CE
= 1V, I
C
= 100mA
Test Conditions
Ic= 100
μA，
I
E
= 0
Ic= 10 mA， I
B
= 0
I
E
= 100μA， I
C
= 0
V
CB
= 45 V , I
E
= 0
V
EB
= 4V , I
C
=0
I
C
=100 mA, I
B
=10mA
I
C
= 500 mA, I
B
= 50mA
I
C
= 500 mA, I
B
= 50mA
V
CE
= 10V, I
C
= 100uA
F
G
H
F
G
H
F
G
H
F
G
H
Transistors
(KCW66)
Min
75
45
5
Typ
Max
Unit
V
20
20
0.3
0.7
2
35
50
80
75
110
180
100
160
250
35
60
100
12
80
10
100
250
400
630
nA
V
pF
dB
MHz
■
Classification of h
fe(3)
Type
Range
Marking
BCW66F
100-250
EF
BCW66G
160-400
EG
BCW66H
250-630
EH
2
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SMD Type
NPN Transistors
BCW66
■
Typical Characterisitics
300
Transistors
(KCW66)
h
FE
—— I
C
V
CE
= 1V
400
Static Characteristic
COMMON
EMITTER
T
a
=25
℃
DC CURRENT GAIN
480uA
400uA
h
FE
560uA
500
(mA)
250
800uA
720uA 640uA
T
a
=100 C
o
200
I
C
COLLECTOR CURRENT
300
T
a
=25 C
o
150
320uA
240uA
160uA
200
100
50
100
I
B
=80uA
0
0
1
2
3
4
5
6
7
8
0
0.1
1
10
100
800
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
1.2
V
BEsat
—— I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
β=10
400
V
CEsat
——
β=10
I
C
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
1.0
300
0.8
T
a
=25
℃
0.6
200
0.4
T
a
=100
℃
100
T
a
=100
℃
T
a
=25
℃
0.2
0.0
0.1
1
10
100
800
0
0.1
1
10
100
800
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
200
180
160
140
120
100
80
60
40
20
0
f
T
——
I
C
100
C
ob
/ C
ib
——
V
CB
/
V
EB
f=1MHz
I
E
=0 / I
C
=0
(MHz)
f
T
TRANSITION FREQUENCY
CAPACITANCE
C
(pF)
T
a
=25 C
o
C
ib
10
C
ob
V
CE
=10V
T
a
=25 C
1
10
100
1
0.1
o
COLLECTOR CURRENT
I
C
(mA)
REVERSE VOLTAGE
1
V
(V)
10
20
0.3
P
c
——
T
a
COLLECTOR POWER DISSIPATION
P
c
(W)
0.2
0.1
0.0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE
T
a
(
℃
)
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