SMD Type
PNP Transistors
BC859~BC860
(KC859~KC860)
SOT-23-3
+0.2
2.9
-0.1
+0.1
0.4
-0.1
Transistors
Unit: mm
■
Features
+0.2
2.8
-0.1
3
●
NPN complements: BC849 and BC850.
1
2
0.55
●
Low voltage (max. 45 V).
0.95
+0.1
-0.1
+0.1
1.9
-0.2
+0.2
1.6
-0.1
●
Low current (max. 100 mA)
0.4
+0.02
0.15
-0.02
+0.2
1.1
-0.1
1. Base
2. Emitter
+0.1
0.68
-0.1
0-0.1
3. Collector
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Peak Collector Current
Peak Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Note.1: Transistor mounted on an FR4 printed-circuit board.
(Note.1)
Thermal Resistance From Junction to Ambient (Note.1)
BC859
BC860
BC859
BC860
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
C
R
thja
T
J
T
stg
Rating
-30
-50
-30
-45
-5
-100
-200
-200
250
500
150
-55 to 150
W
K/W
℃
mA
V
Unit
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SMD Type
PNP Transistors
BC859~BC860
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
DC current gain
Collector capacitance
Emitter capacitance
BC859B:BC860B
BC859C:BC860C
BC859
BC860
BC859
BC860
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE
h
FE
C
c
C
e
Test Conditions
Ic= -100
μA，
I
E
=0
Ic= -1 mA， I
B
=0
I
E
= -100μA， I
C
=0
V
CB
= -30 V , I
E
=0
V
CB
= -30 V , I
E
=0,T
J
= 150℃
V
EB
= -5V , I
C
=0
I
C
=-10 mA, I
B
=-0.5mA
I
C
=-100 mA, I
B
=-5mA
I
C
=-10 mA, I
B
=-0.5mA
I
C
=-100 mA, I
B
=-5mA
V
CE
= -5V, I
C
= -2mA
(Note.1)
(Note.1)
(Note.2)
Transistors
(KC859~KC860)
Min
-30
-50
-30
-45
-5
Typ
Max
Unit
V
-1
-15
-4
-100
nA
uA
nA
-75
-250
-700
-850
-600
220
420
4.5
10
-650
-300
-600
mV
-750
-820
475
800
pF
4
dB
4
V
CE
= -5 V, I
C
= -10mA (Note.2)
V
CE
= -5V, I
C
= -2mA
V
CB
= -10V, I
E
=Ie= 0,f=1MHz
V
EB
= -0.5 V, I
C
=Ic= 0,f=1MHz
V
CE
= -5V, I
C
= -200uA,RS=2KΩ
f=30HZ to 15KHz
V
CE
= -5V, I
C
= -200uA,RS=2KΩ
f=1 KHz,B=200HZ
V
CE
= -5V, I
C
= -10mA,f=100MHz
100
Noise Figure
NF
Transition frequency
f
T
MHz
Note.1: V
BEsat
decreases by about
−1.7
mV/K with increasing temperature.
Note.2: V
BE
decreases by about
−2
mV/K with increasing temperature.
■
Classification of h
fe
Type
Range
Marking
BC859B
220-475
4B*
BC859C
420-800
4C*
BC860B
220-475
4F*
BC860C
420-800
4G*
2
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SMD Type
PNP Transistors
BC859~BC860
■
Typical Characterisitics
handbook, full pagewidth
Transistors
(KC859~KC860)
400
hFE
VCE =
−5
V
300
200
100
0
−10
−2
BC859B; BC860B.
−10
−1
−1
−10
−10
2
IC (mA)
−10
3
Fig.2 DC current gain; typical values.
handbook, full pagewidth
600
hFE
500
VCE =
−5
V
400
300
200
100
0
−10
−2
BC859C; BC860C.
−10
−1
−1
−10
−10
2
IC (mA)
−10
3
Fig.3 DC current gain; typical values.
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