SMD Type
NPN Transistors
MMBT2222AT
(K MBT2222AT)
SOT-523
1.6
+0.
1
-0.
1
+0.1
1.0
-0.1
+0.05
0.2
-0.05
Transistors
U n it: m m
0.15±0.05
0.55 (REF.)
■
Features
●
Small Package
●
Complementary to MMBT2907AT
3
0.3±0.05
+0.1
0.5
-0.1
2
1
1.
-0.15
6
+0.15
0.
36±0.1
1. Base
0.
-0.05
75
+0.05
0.
-0.11
8
+0.
2. Emitter
3. Collecter
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
T
stg
Rating
75
40
6
600
150
833
150
-55 to 150
mA
mW
°C/W
℃
V
Unit
0.
8±0.1
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1
SMD Type
NPN Transistors
MMBT2222AT
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEX
I
EBO
V
CE(sat)
V
BE(sat)
h
FE(1)
h
FE(2)
DC current gain
h
FE(3)
h
FE(4)
h
FE(5)
Delay time
Rise time
Storage time
Fall time
Collector output capacitance
Transition frequency
t
d
t
r
t
s
t
f
C
ob
f
T
Test Conditions
Ic= 100
μA，
I
E
= 0
Ic= 10 mA， I
B
= 0
I
E
= 100μA， I
C
= 0
V
CB
= 75 V , I
E
= 0
V
CE
= 60 V , V
EB(off)
=3V
V
EB
= 6V , I
C
=0
I
C
=150 mA, I
B
=15mA
I
C
= 500 mA, I
B
= 50mA
I
C
=150 mA, I
B
=15mA
I
C
= 500 mA, I
B
= 50mA
V
CE
= 10V, I
C
= 0.1mA
V
CE
= 10V, I
C
= 1mA
V
CE
= 10V, I
C
= 10mA
V
CE
= 10V, I
C
= 150mA
V
CE
= 10V, I
C
= 500mA
VC
C
=30V, V
BE(off)
=-0.5V
I
C
=150mA, I
B1
=15mA
V
CC
=30V, I
C
=150mA, I
B1
=I
B2
=15mA
V
CB
= 10V, I
E
= 0,f=1MHz
V
CE
= 20V, I
C
= 20mA,f=100MHz
Transistors
(K MBT2222AT)
Min
75
40
6
Typ
Max
Unit
V
100
100
100
0.3
1
1.2
2
35
50
75
100
40
10
25
225
60
8
300
pF
MHz
nS
300
V
nA
■
Marking
Marking
1P
2
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