Plastic-Encapsulate Transistors
FEATURES
As complementary type the PNP transistor MMBT3904 is recommended
MMBT3906
(PNP)
Epitaxial planar die construction
MARKING
:
2A
MAXIMUM RATINGS (TA=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
Tj
Tstg
Value
-40
-40
6
-200
200
625
150
-55 to +150
Unit
V
V
V
mA
mW
/W
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Delay Time
Rise Time
Storage Time
Fall Time
unless otherwise specified)
Test conditions
I
C
= 10μA, I
E
=0
I
C
= 1mA, I
B
=0
I
E
=10μA, I
C
=0
V
CB
=60V, I
E
=0
V
CE
=30V,V
BE(off
)=3V
V
EB
=5V, I
C
=0
V
CE
=1V, I
C
=10mA
V
CE
=1V, I
C
= 100mA
I
C
=50mA, I
B
= 5mA
I
C
= 50mA, I
B
= 5mA
V
CE
=20V, I
C
=10mA,f=100MHz
V
CC
=3V,V
BE
=-0.5V
I
C
=10mA, I
B1
=-IB2=1.0mA
V
CC
=3V,I
C
=10mA,
I
B1
=-I
B2
=1mA
300
35
35
225
75
100
30
-0.4
-0.95
v
v
MH
Z
nS
nS
nS
nS
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
fT
td
tr
ts
tf
Min
-40
-40
-5
Max
Unit
v
v
v
-0.1
50
-0.1
300
uA
uA
uA
CLASSIFICATION OF
Rank
Range
O
120-200
Y
200-300
MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/
Page:P2-P1
Plastic-Encapsulate Transistors
MMBT3906
Typical Characteristics
MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/
Page:P2-P2
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