Plastic-Encapsulate Transistors
FEATURES
Epitaxial planar die construction.
Ideal for medium power amplification and switching.
MMBT2907
(PNP)
MAXIMUM RATINGS (TA=25
unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance Junction to Ambient
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
-60
-40
-5
-600
350
360
150
-55 to +150
Unit
V
V
V
mA
mW
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
P
C
R
θJA
T
J
Tstg
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (Tamb=25
unless otherwise specified)
Parameter
Collector-base
Collector-emitter
Emitter-base
breakdown
voltage
voltage
Symbol
VCBO
VCEO
VEBO
ICBO
ICEX
Test conditions
IC=-10μA IE=0
IC=-10mA IB=0
IE=-10μA IC=0
VCB=-50V IE=0
VCE=-30V VBE(OFF)=-0.5V
VCE=-10V IC=-150mA
VCE=-10V IC=-0.1Ma
Min
-60
-40
-5
Typ
Max
Unit
V
V
μV
breakdown
breakdown
voltage
Collector cut-off current
Collector cut-off current
-0.02
-0.05
100
35
50
75
30
-0.4
-1.6
-1.3
-2.6
8.0
30
300
μA
μA
DC current gain
hFE
VCE=-10V IC=-1mA
VCE=-10V IC=-10mA
VCE=-10V IC=-500mA
Collector-emitter
saturation
voltage
VCE(sat)
IC=-150mA IB=-15mA
IC=-500mA IB=-50mA
V
Base-emitter
saturation
voltage
VBE(sat)
IC=-150mA IB=-15mA
IC=-500mA IB=-50mA
V
pF
pF
Output capacitance
Input capacitance
Cob
Cib
VCB=10V
,f=1.0MHz
VEB=10V
,f=1.0MHz
VCE=-20V IC=-50mA
Transition
frequency
fT
f=100MHz
200
MHz
MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/
Page:P2-P1
Plastic-Encapsulate Transistors
Turn-on time
Delay time
Rise time
Turn-off time
Storage time
Fall time
ton
td
tr
toff
ts
tf
VCE=-6V,IC=-150mA
IB1=IB2=-15mA
30
ns
VCE=-30V,IC=-150mA,
IB1=-15mA
40
100
80
ns
ns
ns
45
10
ns
ns
MMBT2907
Typical
Characteristics
MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/
Page:P2-P2