TIGER ELECTRONIC CO.,LTD
Product specification
SWITCHMODE Series NPN Silicon Power Transistors
MJE13003
DESCRIPTION
These devices are designed for high
–
voltage, high
–
speed power switching inductive circuits
where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE such
as Switching Regulator s, Inverters, Motor Controls,applications Solenoid/Relay drivers and
Deflection circuits.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25
O
C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Dissipation at
Max. Operating Junction Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
tot
T
j
T
stg
Value
700
400
9
1.5
0.75
40
150
-55~150
Unit
V
V
V
A
A
W
o
o
C
C
TO-126
Storage Temperature
ELECTRICAL CHARACTERISTICS ( Ta = 25 C)
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Sustaining Voltage
DC Current Gain
Symbol
Test Conditions
V
CB
=400V, I
E
=0
V
EB
=9V, I
C
=0
I
C
=10mA, I
B
=0
V
CE
=2V, I
C
=0.5A
V
CE
=2V, I
C
=1.0A
I
C
=0.5A,I
B
=100mA
I
C
=1A,I
B
=250mA
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Storage Time
400
8
5
40
25
0.5
1.0
1.2
4
10
2
4
V
MHz
us
V
Min.
Typ.
Max.
1.0
1.0
Unit
mA
mA
V
O
I
CEO
I
EBO
V
CEO
h
FE(1)
h
FE(2)
Collector-Emitter Saturation Voltage
V
CE(sat)
V
BE(sat)
I
C
=1A,I
B
=250mA
f
T
T
S
V
CE
=10V,I
C
=100mA
I
B1
=I
B2
=0.2A t
p
=25us
嵌入式系统
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