TIGER ELECTRONIC CO.,LTD
TO-92 Plastic-Encapsulate Transistors
MJE13001
TRANSISTOR (NPN)
TO-92
FEATURE
· power switching applications
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector -Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
600
400
7
0.2
0.75
150
-55~150
Unit
V
V
V
A
W
℃
1. BASE
2. COLLECTOR
3. EMITTER
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Fall time
Storage time
V
CE(sat)
V
BE(sat)
f
T
t
f
t
S
V
CE
= 10V, I
C
= 0.25 mA
I
C
= 50mA, I
B
= 10 mA
I
C
= 50 mA, I
B
= 10mA
V
CE
= 20V, I
C
=20mA
f = 1MHz
I
C
=50mA,
B1
=-I
B2
=5mA,
V
CC
=45V
8
0.3
1.5
5
0.5
1.2
V
V
MHz
μs
μs
Test conditions
I
C
= 100μA , I
E
=0
I
C
= 1mA , I
B
=0
I
E
= 100μA, I
C
=0
V
CB
= 600V , I
E
=0
V
CE
= 400V, I
B
=0
V
EB
=7V, I
C
=0
V
CE
= 20V, I
C
= 20mA
10
Min
600
400
7
100
200
100
40
Typ
Max
Unit
V
V
V
μA
μA
μA
CLASSIFICATION OF h
FE(1)
Range
10-13
13-16
16-19
19-22
22-25
25-28
28-31
31-34
34-37
37-40
A,Dec,2010
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