SMD Type
NPN Transistors
MMSTA42
(KMSTA42)
Transistors
■
Features
●
High Breakdown Voltage
●
Low Collector-Emitter Saturation Voltage
●
Complementary to MMSTA92
1.Base
2.Emitter
3.Collector
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
R
ΘJA
T
J
T
stg
Rating
300
300
5
200
500
300
417
150
-55 to 150
mA
mW
℃/W
℃
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE(1)
h
FE(2)
h
FE(3)
f
T
Test Conditions
Ic= 100 μA， I
E
= 0
Ic= 1 mA， I
B
= 0
I
E
= 100μA， I
C
= 0
V
CB
= 200 V , I
E
= 0
V
EB
= 5V , I
C
=0
I
C
=20 mA, I
B
=2mA
I
C
=20 mA, I
B
=2mA
V
CE
= 10V, I
C
= 1mA
V
CE
= 10V, I
C
= 10mA
V
CE
= 10V, I
C
= 30mA
V
CE
= 20V, I
C
= 10mA,f=30MHz
60
100
75
50
MHz
200
Min
300
300
5
0.25
0.1
0.2
0.9
uA
V
V
Typ
Max
Unit
■
Marking
Marking
K3M
www.kexin.com.cn
1
SMD Type
NPN Transistors
MMSTA42
■
Typical Characterisitics
18
16
Transistors
(KMSTA42)
h
FE
——
I
C
I
C
——
90uA
V
CE
80uA
70uA
60uA
50uA
40uA
30uA
20uA
I
B
=10uA
COMMON
EMITTER
T
a
=25
℃
1000
COLLECTOR CURRENT I
C
(mA)
14
12
10
8
6
4
2
0
DC CURRENT GAIN h
FE
T
a
=100
℃
T
a
=25
℃
100
COMMON EMITTER
V
CE
=10V
0
2
4
6
8
10
12
14
16
18
20
22
10
0.1
1
10
100
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
500
V
CEsat
——
I
C
900
V
BEsat
——
I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(mV)
T
a
=25
℃
600
100
T
a
=100
℃
T
a
=25
℃
T
a
=100
℃
β=10
10
0.1
1
10
100
300
0.1
β=10
COLLECTOR CURREMT
1
COLLECTOR CURREMT
I
C
(mA)
I
C
10
(mA)
100
100
I
C
——
V
BE
300
f
T
——
I
C
TRANSITION FREQUENCY f
T
(MHz)
COLLECTOR CURRENT I
C
(mA)
T =1
00
℃
a
10
100
1
T =2
5
℃
a
COMMON EMITTER
V
CE
=10V
0.1
0
300
600
900
1200
T
a
=25
℃
10
0.1
COMMON EMITTER
V
CE
=20V
BASE-EMMITER VOLTAGE V
BE
(mV)
COLLECTOR CURRENT
1
10
I
C
(mA)
100
100
C
ob
/C
ib
——
V
CB
/V
EB
COLLECTOR POWER DISSIPATION
P
C
(mW)
f=1MHz
I
E
=0/I
C
=0
400
P
C
——
T
a
C
ib
T
a
=25
℃
CAPACITANCE C (pF)
300
10
200
C
ob
100
1
0.1
REVERSE VOLTAGE
1
V
(V)
10
20
0
0
25
AMBIENT TEMPERATURE
50
75
100
T
a
(
℃
)
125
150
2
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