SMD Type
NPN Transistors
MMST4401
(KMST4401)
Transistors
■
Features
●
Small Surface Mount Package
●
Complementary to MMST4403
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
ΘJA
T
J
T
stg
Rating
60
40
6
600
200
625
150
-55 to 150
mA
mW
℃/W
℃
V
Unit
1.Base
2.Emitter
3.Collector
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector-emitter cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE(1)
h
FE(2)
DC current gain
h
FE(3)
h
FE(4)
h
FE(5)
Collector output capacitance
Transition frequency
C
ob
f
T
Test Conditions
Ic= 100 μA， I
E
= 0
Ic= 1 mA， I
B
= 0
I
E
= 100μA， I
C
= 0
V
CB
= 60 V , I
E
= 0
V
CE
= 35 V , I
B
=0
V
EB
= 5V , I
C
=0
I
C
=150 mA, I
B
=15mA
I
C
= 500 mA, I
B
= 50mA
I
C
=150 mA, I
B
=15mA
I
C
= 500 mA, I
B
= 50mA
V
CE
= 1V, I
C
= 0.1mA
V
CE
= 1V, I
C
= 1mA
V
CE
= 1V, I
C
= 10mA
V
CE
= 1V, I
C
= 150mA
V
CE
= 2V, I
C
= 500mA
V
CB
= 5V, I
E
= 0,f=1MHz
V
CE
= 10V, I
C
= 20mA,f=100MHz
250
20
40
80
100
40
6.5
pF
MHz
300
0.75
Min
60
40
6
100
500
100
0.4
0.75
0.95
1.2
V
nA
V
Typ
Max
Unit
■
Marking
Marking
K3X
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