SMD Type
PNP
Transistors
(K MBTA92)
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
MMBTA92
Unit: mm
+0.1
2.4
-0.1
●
Low collector-emitter saturation voltage
●
Complementary to MMBTA42 (NPN)
+0.1
1.3
-0.1
●
High voltage transistor
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
■
Features
3
+0.05
0.1
-0.01
0.97
+0.1
-0.1
1.Base
2.Emitter
+0.1
0.38
-0.1
0-0.1
3.collector
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
T
stg
Rating
-300
-300
-5
-500
350
417
150
-55 to 150
mA
mW
℃/W
℃
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
hfe（1）
hfe（2）
hfe（3）
f
T
Test Conditions
Ic= -100 μA， I
E
=0
Ic= -1 mA， I
B
=0
I
E
= -100μA， I
C
=0
V
CB
= -200 V , I
E
=0
V
EB
= -5V , I
C
=0
I
C
=-20 mA, I
B
=- 2mA
I
C
= -20mA, I
B
= -2mA
V
CE
= -10V, I
C
= -1mA
V
CE
= -10V, I
C
= -10mA
V
CE
= -10V, I
C
=-30mA
V
CE
= -20V, I
C
= -10mA,f=30MHz
60
100
60
50
MHz
300
Min
-300
-300
-5
-0.25
-0.1
-0.2
-0.9
uA
V
V
Typ
Max
Unit
■
Classification of h
fe(2)
Type
Range
Marking
MMBTA92
100-300
2D
MMBTA92-L
100-200
www.kexin.com.cn
1
SMD Type
PNP
■
Typical Characterisitics
70
Transistors
Transistors
(K MBTA92)
1000
MMBTA92
I
C
——
-450uA
-400uA
50
V
CE
COMMON
EMITTER
T
a
=25
℃
h
FE
h
FE
——
I
C
-500uA
(mA)
60
I
C
COLLECTOR CURRENT
40
-300uA
-250uA
-200uA
-150uA
DC CURRENT GAIN
-350uA
T
a
=100
℃
T
a
=25
℃
100
30
20
-100uA
I
B
=-50uA
10
-0.1
10
COMMON EMITTER
V
CE
= -10V
24
-1
-10
-100
-300
0
0
4
8
12
16
20
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
-500
V
CEsat
——
I
C
-900
V
BEsat
——
I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
T
a
=100
℃
-100
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(mV)
T
a
=25
℃
-600
T
a
=25
℃
T
a
=100
℃
-50
-10
-0.1
β=10
-1
-10
-50
-300
-0.1
-1
-10
β=10
-100
COLLECTOR CURREMT
I
C
(mA)
COLLECTOR CURREMT
I
C
(mA)
-100
I
C
——
V
BE
(MHz)
300
f
T
——
I
C
(mA)
I
C
f
T
-1
TRANSITION FREQUENCY
-10
100
COLLECTOR CURRENT
T =1
00
℃
a
T =2
5
℃
a
COMMON EMITTER
V
CE
= -10V
-0.1
-0
-300
-600
-900
-1200
10
-0.1
T
a
=25
℃
-1
-10
COMMON EMITTER
V
CE
=-20V
-100
BASE-EMMITER VOLTAGE V
BE
(mV)
COLLECTOR CURRENT
I
C
C
(mA)
100
C
ob
/C
ib
——
V
CB
/V
EB
COLLECTOR POWER DISSIPATION
P
C
(mW)
f=1MHz
I
E
=0/I
C
=0
400
P
C
——
a
T
(pF)
C
ib
T
a
=25
℃
300
CAPACITANCE
C
10
C
ob
200
100
1
-0.1
-1
-10
-20
0
REVERSE VOLTAGE
V
(V)
0
25
AMBIENT TEMPERATURE
50
75
100
T
a
(
℃
)
125
150
2
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