SMD Type
PNP Transistors
MMBT6520
(KMBT6520)
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
Unit: mm
■
Features
+0.1
2.4
-0.1
●
High Voltage Transistor
+0.1
1.3
-0.1
●
Collector-Emitter Voltage: V
CEO
= -350V
1
2
0.95
+0.1
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
+0.1
-0.1
1.9
+0.1
0.97
-0.1
3
COLLECTOR
1.Base
2.Emitter
+0.1
0.38
-0.1
0-0.1
1
BASE
2
EMITTER
3.collector
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Base Current
Total Device Dissipation FR– 5 Board (Note.1)
Derate above 25 °C
Total Device Dissipation Alumina Substrate (Note.2)
Derate above 25 °C
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature range
Note.1: FR–5 = 1.0 x 0.75 x 0.062 in.
Note.2: Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
(Note.1)
(Note.2)
R
θJA
T
J
T
stg
P
D
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
D
Rating
-350
-350
-5
-500
-250
225
1.8
300
2.4
556
417
150
-55 to 150
mA
mW
mW/℃
mW
mW/℃
℃/W
V
Unit
℃
www.kexin.com.cn
1
SMD Type
PNP Transistors
MMBT6520
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
Test Conditions
Ic= -100
μA，
I
E
=0
Ic= -1 mA， I
B
=0
I
E
= -100μA， I
C
=0
V
CB
= -250 V , I
E
=0
V
EB
= -4V , I
C
=0
I
C
=-10 mA, I
B
=-1mA
Collector-emitter saturation voltage
V
CE(sat)
I
C
=-20 mA, I
B
=-2mA
I
C
=-30 mA, I
B
=-3mA
I
C
=-50 mA, I
B
=-5mA
I
C
=-10 mA, I
B
=-1mA
Base - emitter saturation voltage
Base-Emitter On Voltage
V
BE(sat)
V
BE(on)
I
C
=-20 mA, I
B
=-2mA
I
C
=-30 mA, I
B
=-3mA
V
CE
= -10V, I
C
= -100mA
V
CE
= -10V, I
C
= -1mA
V
CE
=- 10V, I
C
= -10mA
DC current gain
h
FE
V
CE
=- 10V, I
C
= -30mA
V
CE
=- 10V, I
C
= -50mA
V
CE
=- 10V, I
C
= -100mA
Emitter-base capacitance
Collector output capacitance
Transition frequency
C
eb
C
ob
f
T
V
EB
= -0.5V, I
C
= 0,f=1MHz
V
CB
= -20V, I
E
= 0,f=1MHz
V
CE
= -20V, I
C
= -10mA,f=20MHz
40
20
30
30
20
15
Min
-350
-350
-5
Transistors
(KMBT6520)
Typ
Max
Unit
V
-50
-50
-0.3
-0.35
-0.5
-1
-0.75
-0.85
-0.9
-2
nA
V
200
200
100
6
200
pF
MHz
■
Marking
Marking
2Z
2
www.kexin.com.cn
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
