SMD Type
SMD Type
NPN Transistors
MMBT5551
(KMBT5551)
SOT-23-3
+0.2
2.9
-0.1
+0.1
0.4
-0.1
Transistors
Unit: mm
3
+0.2
2.8
-0.1
High Voltage Transistors
Pb-Free Packages are Available
+0.2
1.6
-0.1
Features
1
2
0.55
0.4
0.95
+0.1
-0.1
+0.02
0.15
-0.02
+0.1
-0.2
1.9
+0.2
1.1
-0.1
1. Base
2. Emitter
+0.1
0.68
-0.1
0-0.1
3. Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base v oltage
Collector-emitter v oltage
Emitter-base v oltage
Collector current-continuous
Collector Power Dissipation
Junction and storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pc
T
J
, T
stg
Rating
180
160
6
0.6
300
-55 to +150
Unit
V
V
V
A
mW
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage *
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Transiston frequency
* Pulse Test: Pulse Width = 300
s, Duty Cycle=2.0%.
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
h
FE
I
C
= 100uA, I
I
E
= 10uA, I
Testconditi ons
E
Min
180
160
6
Typ
Max
Unit
V
V
V
=0
I
C
= 1.0 mA, I
B
= 0
C
=0
V
CB
= 120 V, I
E
= 0
V
EB
= 4.0 V, I
C
= 0
I
C
= 1.0 mA, V
CE
= 5 V
I
C
= 10 mA, V
CE
= 5 V
I
C
= 50 mA, V
CE
= 5 V
80
100
50
50
50
300
0.5
1.0
100
nA
nA
V
CE(sat)
I
C
= 50 mA, I
B
= 5.0 mA
V
BE(sat)
I
C
= 50 mA, I
B
= 5.0 mA
f
T
V
CE
=10V,I
C
=10mA,f=100MHz
V
V
MHz
■
Classification of h
fe(2)
Type
Range
Marking
MMBT5551
100-300
MMBT5551-L
100-200
G1
MMBT5551-H
200-300
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1
SMD Type
SMD Type
MMBT5551
Typical Characteristics
18
Transistors
(KMBT5551)
Static Characteristic
90uA
COMMON
EMITTER
T
a
=25
℃
h
FE
500
h
FE
—— I
C
COMMON EMITTER
V
CE
=5V
T
a
=100
℃
(mA)
15
80uA
70uA
COLLECTOR CURRENT
DC CURRENT GAIN
12
60uA
50uA
40uA
T
a
=25
℃
100
I
C
9
6
30uA
I
B
=20uA
3
0
0
2
COLLECTOR-EMITTER VOLTAGE
4
6
8
V
CE
(V)
10
12
10
1
10
100
200
COLLECTOR CURRENT
I
C
(mA)
1.0
V
BEsat
——
β=10
I
C
0.3
V
CEsat
——
B
β=10
I
C
0.8
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(V)
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
T
a
=25
℃
0.6
0.1
T
a
=100
℃
T
a
=100
℃
T
a
=25
℃
0.4
0.2
0.1
1
10
100
200
0.01
1
10
100
200
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
200
100
V
BE
COMMON EMITTER
V
CE
=5V
——
I
C
100
C
ob
/ C
ib
——
V
CB
/
V
EB
f=1MHz
I
E
=0 / I
C
=0
I
C
(mA)
T
a
=100
℃
COLLECTOR CURRENT
T
a
=25
℃
10
CAPACITANCE
C
(pF)
C
ib
T
a
=25
℃
10
C
ob
1
0.2
0.4
BASE-EMITTER VOLTAGE
0.6
V
BE
(V)
0.8
1.0
1
0.1
REVERSE VOLTAGE
1
V
(V)
10
20
150
f
T
T
a
=25
℃
V
CE
=10V
——
I
C
0.4
P
C
——
T
a
(MHz)
COLLECTOR POWER DISSIPATION
P
C
(W)
10
0.3
f
T
TRANSITION FREQUENCY
100
0.2
0.1
50
1
3
20
30
0.0
0
25
50
75
100
125
150
COLLECTOR CURRENT
I
C
(mA)
AMBIENT TEMPERATURE
T
a
(
℃
)
2
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