SMD Type
NPN Transistors
PZTA42
(KZTA42)
SOT-223
6.50±0.2
3.00±0.1
Transistors
Unit:mm
。
10
4
7.0±0.3
3.50±0.2
■
Features
●
High breakdown voltage
●
Low collector-emitter saturation voltage
●
Complementary to PZTA92
1
2
3
2.30 (typ)
1.80 (max)
0.250
Gauge Plane
0.02 ~ 0.1
1.Base
2.Collector
0.70±0.1
4.60 (typ)
3.Emitter
4.Collector
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
stg
Rating
300
300
6
200
500
1
150
-55 to 150
mA
W
℃
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE(1)
h
FE(2)
h
FE(3)
C
ob
f
T
Test Conditions
Ic= 100 μA， I
E
= 0
Ic= 1 mA， I
B
= 0
I
E
= 100μA， I
C
= 0
V
CB
= 200 V , I
E
= 0
V
EB
= 6V , I
C
=0
I
C
=20 mA, I
B
=2mA
I
C
=20 mA, I
B
=2mA
V
CE
= 10V, I
C
= 1mA
V
CE
= 10V, I
C
= 10mA
V
CE
= 10V, I
C
= 30mA
V
CB
= 20V, I
E
= 0,f=1MHz
V
CE
= 20V, I
C
= 10mA,f=100MHz
50
25
40
40
3
pF
MHz
Min
300
300
6
100
100
0.5
0.9
nA
V
V
Typ
Max
Unit
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