SMD Type
NPN Transistors
PZT4401
(KZT4401)
SOT-223
Transistors
Unit:mm
。
10
6.50±0.2
3.00±0.1
4
7.0±0.3
3.50±0.2
■
Features
●
Low Voltage and Low Current
●
Linear Amplifier and Switch Applications
●
Complementary to PZT4403
1
2
3
2.30 (typ)
1.80 (max)
0.250
Gauge Plane
0.02 ~ 0.1
1.Base
2.Collector
0.70±0.1
4.60 (typ)
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
T
stg
Rating
60
40
6
600
1
125
150
-55 to 150
mA
W
℃/W
℃
V
Unit
3.Emitter
4.Collector
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE(1)
DC current gain
h
FE(2)
h
FE(3)
h
FE(4)
Emitter input capacitance
Collector output capacitance
Transition frequency
C
ib
C
ob
f
T
Test Conditions
Ic= 100 μA， I
E
= 0
Ic= 1 mA， I
B
= 0
I
E
= 100μA， I
C
= 0
V
CB
= 60 V , I
E
= 0
V
EB
= 6V , I
C
=0
I
C
=150 mA, I
B
=15mA
I
C
= 500 mA, I
B
= 50mA
I
C
=150 mA, I
B
=15mA
I
C
= 500 mA, I
B
= 50mA
V
CE
= 1V, I
C
= 0.1mA
V
CE
= 1V, I
C
= 1mA
V
CE
= 1V, I
C
= 10mA
V
CE
= 1V, I
C
= 150mA
V
EB
= 0.5V, I
C
= 0,f=1MHz
V
CB
= 5V, I
E
= 0,f=1MHz
V
CE
= 10V, I
C
= 20mA,f=100MHz
250
20
40
80
100
300
30
8
pF
MHz
Min
60
40
6
100
100
0.4
0.75
0.95
1.2
V
nA
V
Typ
Max
Unit
■
Marking
Marking
ZT4401
．
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1
SMD Type
NPN Transistors
PZT4401
■
Typical Characterisitics
250
Transistors
(KZT4401)
h
FE
COMMON EMITTER
V
CE
= 1V
Static Characteristic
COMMON
EMITTER
T
a
=25
℃
1000
——
I
C
COLLECTOR CURRENT I
C
(mA)
200
1mA
0.8mA
DC CURRENT GAIN h
FE
0.9mA
T
a
=100
℃
T
a
=25
℃
100
150
0.7mA
0.6mA
100
0.5mA
0.4mA
0.3mA
50
0.2mA
I
B
=0.1mA
0
0
1
2
3
4
10
1
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
10
I
C
100
(mA)
600
1000
V
BEsat
β=10
——
I
C
1000
V
CEsat
β=10
——
I
C
800
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(mV)
T
a
=25
℃
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
600
T
a
=100
℃
100
T
a
=100
℃
400
T
a
=25
℃
200
0
0.1
1
10
100
600
10
0.5
0.1
1
10
100
600
COLLECTOR CURREMT
I
C
(mA)
COLLECTOR CURREMT
I
C
(mA)
600
I
C
COMMON EMITTER
V
CE
=1V
——
V
BE
TRANSITION FREQUENCY f
T
(MHz)
500
f
T
COMMON EMITTER
V
CE
=10V
T
a
=25
℃
——
I
C
COLLECTOR CURRENT I
C
(mA)
100
T =1
00
℃
a
10
1
0.1
T =2
5
℃
a
100
0
200
400
600
800
1000
1200
10
10
BASE-EMMITER VOLTAGE V
BE
(mV)
COLLECTOR CURRENT
20
I
C
(mA)
30
40
100
C
ob
/C
ib
——
V
CB
/V
EB
f=1MHz
I
E
=0/I
C
=0
T
a
=25
℃
1200
P
C
——
T
a
CAPACITANCE C (pF)
C
ib
COLLECTOR POWER DISSIPATION
P
C
(mW)
1000
800
10
600
C
ob
400
200
1
0.1
0
1
10
30
0
25
50
75
100
125
150
REVERSE VOLTAGE
V
(V)
AMBIENT TEMPERATURE
T
a
(
℃
)
2
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