SMD Type
N-Channel
MOSFET
SI4410DY
(KI4410DY)
SOP-8
MOSFET
■
Features
●
V
DS (V)
= 30V
●
I
D
= 10 A (V
GS
= 10V)
0.21
-0.02
+0.04
1.50
0.15
●
R
DS(ON)
＜
13.5mΩ (V
GS
= 10V)
●
R
DS(ON)
＜
20mΩ (V
GS
= 4.5V)
D
1
2
3
4
Source
Source
Source
Gate
5
6
7
8
Drain
Drain
Drain
Drain
G
S
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Case
Junction Temperature
Storage Temperature Range
Note.1:Surface Mounted on FR4 Board, t
≤
10 sec.
TA=25℃
TA=70℃
(Note.1)
(Note.1)
TA=25℃
TA=70℃
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
R
thJC
T
J
T
stg
Rating
30
±20
10
8
50
2.5
1.6
50
22
150
-55 to 150
W
A
Unit
V
℃/W
℃
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1
SMD Type
N-Channel
MOSFET
SI4410DY
(KI4410DY)
■
Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
On State Drain Current
Forward Transconductance
Gate Resistance
Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Maximum Body-Diode Continuous Current
Diode Forward Voltage
Symbol
V
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(O
n
)
I
D(ON)
g
FS
R
g
Q
g
Q
gt
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
S
V
SD
I
S
=2.3A,V
GS
=0V
(Note.1)
I
F
= 2.3A, d
I
/d
t
= 100A/μs
V
GS
=10V, V
DS
=25V,I
D
=1A
R
L
=25Ω,R
GEN
=6Ω
V
GS
=10V, V
DS
=15V, I
D
=10A
Test Conditions
I
D
=250μA, V
GS
=0V
V
DS
=30V, V
GS
=0V
V
DS
=30V, V
GS
=0V, T
J
=55℃
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS
, I
D
=250μA
V
GS
=10V, I
D
=10A
V
GS
=4.5V, I
D
=5A
V
GS
=5V, V
DS
=10V
V
DS
=15V, I
D
=5A
(Note.1)
(Note.1)
(Note.1)
(Note.1)
20
1
MOSFET
Min
30
Typ
Max
1
25
±100
3
13.5
20
Unit
V
uA
nA
V
mΩ
A
38
0.5
20
37
7
7
30
20
100
80
80
2.3
1.1
2.6
34
60
S
Ω
V
GS
=0V, V
DS
=0V, f=1MHz
V
DS
= 15 V, V
GS
= 5 V, I
D
= 10 A
nC
ns
A
V
Note.1: Pulse test; pulse width
≤
300us, duty cycle
≤
2%.
■
Marking
Marking
4410
KC****
2
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SMD Type
N-Channel
MOSFET
SI4410DY
(KI4410DY)
■
Typical Characterisitics
50
MOSFET
Output Ch ar ac t er i s t i c s
V
GS
= 10 V thru 4 V
50
Tr an s f er Ch ar ac t er i s t i c s
40
I D - Drain Current (A)
I D - Drain Current (A)
40
30
30
20
20
T
C
= 125 C
10
3 V
10
25 C
- 55 C
0
0
2
4
6
8
10
V
DS
- Drain-to-Source Voltage (V)
0
0
1
2
3
4
5
V
GS
- Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.030
3000
C
iss
Capacitance
0.025
r
DS(on)
- On-Resistance (
C - Capacitance (pF)
2500
0.020
V
GS
= 4.5 V
0.015
V
GS
= 10 V
0.010
2000
1500
1000
C
oss
0.005
500
C
rss
0.000
0
10
20
30
40
50
I
D
- Drain Current (A)
0
0
6
12
18
24
30
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
10
V
DS
= 15 V
I
D
= 10 A
V GS - Gate-to-Source Voltage (V)
8
1.5
6
r
DS(on)
- On-Resistance (
2.0
On-Resistance vs. Junction T emperature
V
GS
= 10 V
I
D
= 10 A
(Normalized)
1.0
4
0.5
2
0
0
8
16
24
32
40
0.0
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature ( C)
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3
SMD Type
N-Channel
MOSFET
SI4410DY
(KI4410DY)
■
Typical Characterisitics
Source-Drain Diode Forward Voltage
40
0.10
MOSFET
On-Resistance vs. Gate-to-Source Voltage
0.08
I S - Source Current (A)
10
r
DS(on)
- On-Resistance (
T
J
= 150 C
)
T
J
= 25 C
0.06
0.04
I = 10 A
D
0.02
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
0.6
0.4
0.2
V GS(th) Variance (V)
- 0.0
- 0.2
- 0.4
- 0.6
- 0.8
Threshold V oltage
80
Single Pulse Power
60
I
D
= 250 A
Power (W)
40
20
.
- 1.0
- 50
- 25
0
25
50
75
100
125
150
0
0.01
0.10
Time (sec)
1.00
10.00
T
J
- Temperature ( C)
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
Notes:
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
Square Wave Pulse Duration (sec)
1
P
DM
t
1
t
2
t
1
1. Duty Cycle, D =
t
2
2. Per Unit Base = R
thJA
= 50 C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
30
4
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