SMD Type
N-Channel
MOSFET
SI4056DY
(KI4056DY)
MOSFET
■
Features
●
V
DS (V)
= 100V
●
I
D
= 11.1 A (V
GS
= 10V)
●
R
DS(ON)
＜
23mΩ (V
GS
= 10V)
●
R
DS(ON)
＜
24mΩ (V
GS
= 7.5V)
G
D
SOP-8
1.50
0.15
+0.04
0.21
-0.02
●
R
DS(ON)
＜
31 mΩ (V
GS
= 4.5V)
1
2
3
4
Source
Source
Source
Gate
5
6
7
8
Drain
Drain
Drain
Drain
S
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Tc=25℃
Continuous Drain Current
Tc=100℃
Ta=25℃
*1,2
Ta=100℃ *1,2
Pulsed Drain Current
Avalanche Current
L=0.1mH
Tc=25℃
Power Dissipation
Tc=100℃
Ta=25℃
L=0.1mH
t
≤
10s *1,3
Steady State
*1,2
Ta=100℃ *1,2
Single Pulsed Avalanche Energy
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Foot
Junction Temperature
Storage Temperature Range
*1.Surface mounted on 1" x 1" FR4 board.
*2.t = 10 s.
*3.Maximum under steady state conditions is 85 °C/W.
E
AS
R
thJA
R
thJF
TJ
Tstg
P
D
I
DM
I
AS
I
D
Symbol
V
DS
V
GS
Rating
100
±20
11.1
8.8
7.3
5.8
70
15
5.7
3.6
2.5
1.6
11.2
50
22
150
-55 to 150
mJ
℃/W
W
A
Unit
V
℃
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1
SMD Type
N-Channel
MOSFET
SI4056DY
(KI4056DY)
■
Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On-State Drain Current *1
Gate Threshold Voltage
Static Drain-Source On-Resistance *1
Forward Transconductance *1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Gate Resistance
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Maximum Body-Diode Continuous Current
Maximum Pullsed Drain-Source Current
Diode Forward Voltage
Symbol
V
DSS
I
DSS
I
GSS
I
D(on)
V
GS(th)
R
DS(O
n
)
g
FS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
t
a
t
b
I
S
I
SM
V
SD
I
S
=4A
Tc=25℃
I
F
= 5A, d
I
/d
t
= 100A/μs ,T
J
=25℃
I
D
=10A, V
DS
=50V, ,R
GEN
=5Ω,
V
GED
=10V ,Rg=1Ω *2
I
D
=10A, V
DS
=50V, ,R
GEN
=5Ω,
V
GED
=7.5V ,Rg=1Ω *2
f = 1 MHz
0.2
V
GS
=10V, V
DS
=50V, I
D
=10A *2
V
GS
=4.5V, V
DS
=50V, I
D
=10A *2
V
GS
=0V, V
DS
=50V, f=1MHz *2
Test Conditions
I
D
=250μA, V
GS
=0V
V
DS
=100V, V
GS
=0V
V
DS
=100V, V
GS
=0V, Ta=55℃
V
DS
=0V, V
GS
=±20V
V
DS
≥
5V, V
GS
=10V
V
DS
=V
GS
, I
D
=250μA
V
GS
=10V, I
D
=15A
V
GS
=7.5V, I
D
=12A
V
GS
=4.5V, I
D
=10A
V
DS
=15V, I
D
=15A
30
1.5
Min
100
MOSFET
Typ
Max
1
10
±100
Unit
V
μA
nA
A
V
mΩ
S
pF
2.8
17
18
22
26
900
340
31
19.6
9.7
2.8
4.3
0.85
13
14
19
10
11
10
20
9
34
34
20
14
5.1
70
0.77
1.1
1.7
26
28
38
20
22
20
40
18
65
65
29.5
15
23
24
31
nc
Ω
ns
nc
ns
A
V
*1. Pulse Test:Pulse width≤300us,Duty cycle≤2%
*2. Essentially independent of operating temperature
■
Marking
Marking
4056
KC****
2
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SMD Type
N-Channel
MOSFET
SI4056DY
(KI4056DY)
■
Typical Characterisitics
70
V
GS
= 10 V thru 5 V
56
I
D
- Drain Current (A)
I
D
- Drain Current (A)
40
50
MOSFET
42
V
GS
= 4 V
28
30
T
C
= 25
°C
20
14
V
GS
= 3 V
0
0
1
2
3
4
V
DS
- Drain-to-Source Voltage (V)
5
10
T
C
= 125
°C
0
0.0
1.5
3.0
T
C
= - 55
°C
4.5
6.0
7.5
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.05
1500
Transfer Characteristics
0.04
R
DS(on)
- On-Resistance (Ω)
1200
C - Capacitance (pF)
C
iss
900
C
oss
600
0.03
V
GS
= 4.5 V
V
GS
= 7.5 V
V
GS
= 10 V
0.02
0.01
300
C
rss
0.00
0
10
20
30
I
D
- Drain Current (A)
40
50
0
0
20
40
60
80
V
DS
- Drain-to-Source Voltage (V)
100
On-Resistance vs. Drain Current
10
I
D
= 10 A
R
DS(on)
- On-Resistance (Normalized)
V
GS
- Gate-to-Source Voltage (V)
2.1
Capacitance
I
D
= 15 A
V
DS
= 50 V
1.8
V
GS
= 10 V
8
6
V
DS
= 25 V
4
V
DS
= 75 V
1.5
V
GS
= 4.5 V
1.2
2
0.9
0
0.0
4.4
8.8
13.2
Q
g
- Total Gate Charge (nC)
17.6
22
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
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3
SMD Type
N-Channel
MOSFET
SI4056DY
(KI4056DY)
■
Typical Characterisitics
100
0.15
MOSFET
I
D
= 15 A
10
I
S
- Source Current (A)
R
DS(on)
- On-Resistance (Ω)
T
J
= 150
°C
T
J
= 25 °C
0.12
1
0.09
0.1
0.06
T
J
= 125
°C
0.01
0.03
T
J
= 25
°C
0.001
0.0
0.2
0.4
0.6
0.8
V
SD
- Source-to-Drain Voltage (V)
1.0
1.2
0.00
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
0.5
200
On-Resistance vs. Gate-to-Source Voltage
0.2
160
I
D
= 5 mA
- 0.4
I
D
= 250 µA
- 0.7
Power (W)
150
V
GS(th)
(V)
- 0.1
120
80
40
- 1.0
- 50
.
- 25
0
25
50
75
T
J
- Temperature (°C)
100
125
0
0.001
0.01
0.1
Time (s)
1
10
Threshold Voltage
100
I
DM
Limited
12
10
I
D
- Drain Current (A)
1 ms
I
D
- Drain Current (A)
I
D
Limited
15
Single Pulse Power, Junction-to-Ambient
9
1
Limited by R
DS(on)
*
10 ms
100 ms
1 s
T
A
= 25 °C
Single Pulse
10 s
BVDSS Limited
100
DC
6
0.1
3
0.01
0.01
0.1
1
10
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Safe Operating Area, Junction-to-Ambient
Current Derating*
4
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SMD Type
N-Channel
MOSFET
SI4056DY
(KI4056DY)
■
Typical Characterisitics
7.0
2.0
MOSFET
5.6
1.6
Power (W)
2.8
Power (W)
4.2
1.2
0.8
1.4
0.4
0.0
0
25
50
75
100
125
T
C
- Case Temperature (°C)
150
0.0
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
Power, Junction-to-Foot
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Power, Junction-to-Ambient
0.2
0.1
0.05
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
0.1
0.02
Single Pulse
2. Per Unit Base = R
thJA
= 85 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Im pedance, Junction-to-Ambient
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.05
0.02
Single Pulse
0.1
0.01
0. 001
0
0. 01
0
0. 1
0
0.
1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
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5
stm32/stm8
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