DIP Type
N-Channel Enhancement
MOSFET
NDT4N65P
(KDT4N65P)
■
Features
●
V
DS (V)
= 650V
●
I
D
= 3.0 A (V
GS
= 10V)
●
R
DS(ON)
＜
3Ω (V
GS
= 10V)
D
MOSFET
TO-251
1
2 3
G
1
S
2
3
Unit: mm
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Avalanche Current
Power Dissipation
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
( *b)
( *a)
( *c)
( *a)
( *a)
Ta=25℃
Derate above 25℃
Ta=25℃
Ta=100℃
Symbol
V
DS
V
GS
I
D
I
DM
I
AR
P
D
EAS
EAR
dv/dt
R
thJA
R
thJC
R
thJS
TL
TJ
Tstg
Rating
650
±30
3.0
1.8
12
4.5
58
0.46
210
5.8
4.5
110
2.16
50
300
150
-55 to 150
℃
℃/W
W
W/℃
mJ
V/ns
A
Unit
V
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Case
Thermal Resistance.Case-to-Sink Typ
Maximum lead Temperature for soldering purpose,
1/8 from case for 5 seconds
Junction Temperature
Storage Temperature Range
Notes:
a.Repetitive Rating :Pulse width limited by maximum junction temperature
b.I
AS
=4.5A,V
DD
=50V,R
G
=25Ω,Starting T
J
=25℃
c.I
SD
≤4.5A,di/dt≤200A/us,V
DD
≤BV
DSS
,Starting T
J
=25℃
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1
DIP Type
N-Channel Enhancement
MOSFET
MOSFET
NDT4N65P
(KDT4N65P)
■
Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Maximum Body-Diode Continuous Current
Maximum Pullsed Drain-Source Current
Diode Forward Voltage
Symbol
V
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(O
n
)
g
FS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
I
S
I
SM
V
SD
I
S
=3.0A,V
GS
=0V
I
F
= 4.5A, d
I
/d
t
= 100A/μs V
GS
=0V ( *a)
I
D
=4.5A, V
DS
=300V, ,R
GEN
=25Ω ( *a/b)
V
GS
=10V, V
DS
=480V, I
D
=4.5A
( *a/b)
V
GS
=0V, V
DS
=25V, f=1MHz
Test Conditions
I
D
=250μA, V
GS
=0V
V
DS
=650V, V
GS
=0V
V
DS
=520V, V
GS
=0V, Ta=125℃
V
DS
=0V, V
GS
=±30V
V
DS
=V
GS
, I
D
=250μA
V
GS
=10V, I
D
=1.5A
V
DS
=40V, I
D
=1.5A
( *a)
2.0
2.5
4.7
560
55
7
16
2.5
6.5
10
40
40
50
300
2.0
3.0
12
1.4
uC
A
V
ns
nC
pF
Min
650
1
10
±100
4.0
3.0
Typ
Max
Unit
V
μA
nA
V
Ω
S
Notes:
a.Pulse Test:Pulse width≤300us,Duty cycle≤2%
b.Essentially independent of operating temperature
2
www.kexin.com.cn
DIP Type
N-Channel Enhancement
MOSFET
MOSFET
NDT4N65P
(KDT4N65P)
■
Typical Characterisitics
10
1
Top :
I
D
, Drain Current [A]
I
D
, Drain Current [A]
V
GS
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
10
1
150 C
-55 C
o
o
10
0
10
0
25 C
o
10
-1
※
Notes :
1. 250μ s Pulse Test
2. T
C
= 25
℃
10
0
10
1
10
-1
※
Notes :
1. V
DS
= 40V
2.
2 250μ s Pulse Test
2
4
6
8
10
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Figure 1. On-Region Characterist
ics
Figure 2. Transfer Characteirstics
8
7
6
5
4
3
R
DS(ON)
[Ω ],
nce
Drain-Source On-Resistan
10
1
V
GS
= 10V
]
I
DR
, Reverse Drain Current [A]
10
0
V
GS
= 20V
2
1
※
Note : T
J
= 25
℃
150
℃
25
℃
※
Notes :
1. V
GS
= 0V
2. 250μ s Pulse Test
0
2
4
6
8
10
10
-1
I
D
, Drain C
Current [A]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
SD
, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V
GS
, Gate-Source Voltage [V]
1000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
10
V
DS
= 120V
V
DS
= 300V
Capacitance [pF]
C
iss
C
oss
500
※
Notes ;
1. V
GS
= 0 V
2. f = 1 MHz
8
V
DS
= 480V
6
4
C
rss
0
-1
10
2
※
Note : I
D
= 4.5A
0
10
0
10
1
0
4
8
12
16
V
DS
, Drain-Source Voltage [ ]
a Sou ce o age [V]
Q
G
, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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3
DIP Type
N-Channel Enhancement
MOSFET
MOSFET
NDT4N65P
(KDT4N65P)
■
Typical Characterisitics
1.2
3.0
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
e
1.1
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0
※
Notes :
1. V
GS
= 10 V
2. I
D
= 1.5 A
0.9
※
Notes :
1. V
GS
= 0 V
2. I
D
= 250
μ
A
0.5
0.8
08
-100
-50
0
50
100
o
150
200
0.0
-100
-50
0
50
100
o
150
200
T
J
, Junction Temperature [ C]
T
J
, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs Temperature
2
Figure 8. On-Resistance Variation
vs Temperature
10
4
Operation in This Area
is Limited by R
DS(on)
I
D
, Drain Current [A]
10
0
1 ms
10 ms
100 ms
DC
I
D
, Drain Current [A]
3
10
1
100 s
3
2
10
-1
※
Notes :
1
1. T
C
= 25 C
2. T
J
= 150 C
3. Single Pulse
o
o
10
-2
10
0
10
1
10
2
10
0
25
50
75
100
125
150
V
DS
, Drain-Source Voltage [V]
T
C
, Case Temperature [
℃
]
Figure 9. Maximum Safe Operating Area
.
Figure 10. Maximum Drain C
urrent
vs Case Temperature
ponse
Z
θ
JC
Thermal Resp
(t),
10
0
D=0.5
0.2
02
0.1
0.05
10
-1
0.02
0.01
single pulse
※
Notes :
1. Z
θ
JC
= 2.16
℃
/W Max.
(t)
2. Duty Factor, D=t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
θ
JC
(t)
P
DM
t
1
t
2
10
0
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
1
t
1
, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
4
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