Preliminary
Datasheet
BCR1AM-12A
600V-1A-Triac
Low Power Use
Features
•
I
T (RMS)
: 1 A
•
V
DRM
: 600 V
•
I
FGTI
, I
RGTI
, I
RGT III
: 7 mA
•
Non-Insulated Type
•
Planar Passivation Type
R07DS0177EJ0400
Rev.4.00
Jul 31, 2014
Outline
RENESAS Package code: PRSS0003EA-A
(Package name: TO-92*)
2
1. T
1
Terminal
2. T
2
Terminal
3. Gate Terminal
3
1
1
3
2
Applications
Washing machine, electric fan, air purifier, electric pot, rice-cooker, electric blanket, refrigerator, Solid State Relay,
and other general purpose AC control applications
Maximum Ratings
Parameter
Repetitive peak off-state voltage
Note1
Non-repetitive peak off-state voltage
Note1
Parameter
RMS on-state current
Surge on-state current
I
2
t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Notes: 1. Gate open.
Symbol
I
T (RMS)
I
TSM
I
2
t
P
GM
P
G (AV)
V
GM
I
GM
Tj
Tstg
—
Symbol
V
DRM
V
DSM
Ratings
1.0
10
0.41
1
0.1
6
0.5
– 40 to +125
– 40 to +125
0.23
Unit
A
A
A
2
s
W
W
V
A
°C
°C
g
Voltage class
12
600
720
Conditions
Commercial frequency, sine full wave
Note3
360° conduction, Tc = 56°C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Unit
V
V
Typical value
R07DS0177EJ0400 Rev.4.00
Jul 31, 2014
Page 1 of 6
BCR1AM-12A
Preliminary
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Note2
Ι
ΙΙ
ΙΙΙ
Ι
ΙΙ
ΙΙΙ
Symbol
I
DRM
V
TM
V
FGT
Ι
V
RGT
Ι
V
RGT
ΙΙΙ
I
FGT
Ι
I
RGT
Ι
I
RGT
ΙΙΙ
V
GD
R
th (j-c)
(dv/dt)c
Rated value
Min.
—
—
—
—
—
—
—
—
0.1
—
2
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
0.5
1.6
2.0
2.0
2.0
7
7
7
—
50
—
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/W
V/μs
Test conditions
Tj = 125°C, V
DRM
applied
Tc = 25°C, I
TM
= 1.5 A,
Instantaneous measurement
Tj = 25°C, V
D
= 6 V, R
L
= 6
Ω,
R
G
= 330
Ω
Tj = 25°C, V
D
= 6 V, R
L
= 6
Ω,
R
G
= 330
Ω
Tj = 125°C, V
D
= 1/2 V
DRM
Junction to case
Note3
Tj = 125°C
Gate trigger current
Note2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
Note4
commutating voltage
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured at the T
2
terminal 1.5 mm away from the molded case.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
(di/dt)c
Time
Time
V
D
Test conditions
1. Junction temperature
Tj = 125°C
2. Rate of decay of on-state commutating current
(di/dt)c = – 0.5 A/ms
3. Peak off-state voltage
V
D
= 400 V
Main Current
Main Voltage
(dv/dt)c
R07DS0177EJ0400 Rev.4.00
Jul 31, 2014
Page 2 of 6
BCR1AM-12A
Preliminary
Performance Curves
Maximum On-State Characteristics
10
2
7
Tj = 25°C
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4
10
Rated Surge On-State Current
Surge On-State Current (A)
On-State Current (A)
8
6
4
2
0
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Trigger Current (Tj = t°C)
×
100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Characteristics
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
7
5
3
2
Gate Trigger Current vs.
Junction Temperature
10
3
7
5
4
3
2
10
2
7
5
4
3
2
V
GM
= 6V
P
G(AV)
= 0.1W
P
GM
=
1W
Typical Example
Gate Voltage (V)
I
GM
= 0.5A
I
FGT I
I
RGT I
I
RGT III
V
GD
= 0.1V
I
FGT I
, I
RGT I
I
RGT III
10
–2
10
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
10
1
–60 –40 –20 0 20 40 60 80 100 120 140
Gate Current (mA)
Junction Temperature (°C)
Maximum Transient Thermal
Impedance Characteristics
(Junction to case, Junction to ambient)
Gate Trigger Voltage (Tj = t°C)
×
100 (%)
Gate Trigger Voltage (Tj = 25°C)
Gate Trigger Voltage vs.
Junction Temperature
10
3
7
5
4
3
2
10
2
7
5
4
3
2
Typical Example
V
FGT I
, V
RGT I
Transient Thermal Impedance (°C/W)
10
2
2 3 5 7 10
3
2 3 5 7 10
4
2 3 5 7 10
5
10
3
7
5
3
2
Junction to ambient
2
10
7
5
Junction to case
3
2
10
1
7
5
3
2
10
0
10
–1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
V
RGT III
10
1
–60 –40 –20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
Conduction Time (Cycles at 60Hz)
R07DS0177EJ0400 Rev.4.00
Jul 31, 2014
Page 3 of 6
BCR1AM-12A
Preliminary
Allowable Case Temperature vs.
RMS On-State Current
160
Maximum On-State Power Dissipation
2.0
On-State Power Dissipation (W)
1.6
Case Temperature (°C)
140
120
100
80
60
40
Curves apply regardless
of conduction angle
1.2
0.8
0.4
360° Conduction
Resistive,
inductive loads
0
0.4
0.8
1.2
1.6
2.0
0
360° Conduction
20
Resistive,
inductive loads
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current (Tj = t°C)
×
100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Allowable Ambient Temperature vs.
RMS On-State Current
160
Repetitive Peak Off-State Current vs.
Junction Temperature
10
5
7
Typical Example
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
10
2
–60 –40 –20 0 20 40 60 80 100 120 140
Ambient Temperature (°C)
140
120
100
80
60
40
20
0
0
Curves apply
regardless of
conduction angle
Resistive,
inductive loads
Natural convection
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
RMS On-State Current (A)
Junction Temperature (°C)
Holding Current vs.
Junction Temperature
Holding Current (Tj = t°C)
×
100 (%)
Holding Current (Tj = 25°C)
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1
–60 –40 –20 0 20 40 60 80 100 120 140
Latching Current vs.
Junction Temperature
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
Typical Example
Distribution
Latching Current (mA)
T
2
+, G–
Typical Example
T
2
+, G+ Typical Example
T
2
–, G–
10
-1
–60 –40 –20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
Junction Temperature (°C)
R07DS0177EJ0400 Rev.4.00
Jul 31, 2014
Page 4 of 6
BCR1AM-12A
Breakover Voltage vs.
Junction Temperature
Preliminary
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
160
140
120
100
80
60
40
20
0
10
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
160
Breakover Voltage (dv/dt = xV/μs)
×
100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Breakover Voltage (Tj = t°C)
×
100 (%)
Breakover Voltage (Tj = 25°C)
Typical Example
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100120 140
Typical Example
Tj = 125°C
I Quadrant
III Quadrant
Junction Temperature (°C)
Rate of Rise of Off-State Voltage (V/μs)
Commutation Characteristics
Gate Trigger Current vs.
Gate Current Pulse Width
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
10
1
7
5
4
3
2
10
0
7
5
4
3
2
Gate Trigger Current (tw)
×
100 (%)
Gate Trigger Current (DC)
Typical Example
Tj = 125°C
I
T
= 1A
τ
= 500μs
V
D
= 200V
Minimum
Characteristics
Value
III Quadrant
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1 0
10
Typical Example
I
FGT I
I
RGT III
I
RGT I
I Quadrant
10
–1 –1
10
2 3 4 5 7 10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
1
2 3 4 5 7 10
2
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Current Pulse Width (μs)
Gate Trigger Characteristics Test Circuits
6Ω
6Ω
6V
V
A
330Ω
6V
V
A
330Ω
Test Procedure I
6Ω
Test Procedure II
6V
V
A
330Ω
Test Procedure III
R07DS0177EJ0400 Rev.4.00
Jul 31, 2014
Page 5 of 6
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