JMnic
Product Specification
Silicon NPN Power Transistors
2SC3296
DESCRIPTION
・With
TO-220Fa package
・Wide
area of safe operation
・Complement
to type 2SA1304
APPLICATIONS
・Power
amplifier applications
・Vertical
output applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
・
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
T
a
=25℃
P
C
Collector power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
20
150
-55~150
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
150
150
5
1.5
0.5
2
W
UNIT
V
V
V
A
A
JMnic
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SC3296
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=10mA , I
B
=0
150
V
V
CEsat
Collector-emitter saturation voltage
I
C
=0.5A ;I
B
=50mA
1.5
V
V
BE
Base-emitter on voltage
I
C
=0.5A ; V
CE
=10V
0.85
V
μA
I
CBO
Collector cut-off current
V
CB
=120V; I
E
=0
10
I
EBO
Emitter cut-off current
V
EB
=5V; I
C
=0
10
μA
h
FE
DC current gain
I
C
=0.5A ; V
CE
=10V
40
140
C
OB
Output capacitance
I
E
=0 ; V
CB
=10V;f=1MHz
35
pF
f
T
Transition frequency
I
C
=0.5A ; V
CE
=10V
4
MHz
2
JMnic
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3296
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
JMnic
Product Specification
Silicon NPN Power Transistors
2SC3296
4
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