SMD Type
P-Channel
MOSFET
SI2301BDS-HF
(KI2301BDS-HF)
■
Features
●
V
DS (V)
=-20V
●
R
DS(ON)
＜
100mΩ (V
GS
=-4.5V)
+0.1
2.4
-0.1
MOSFET
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
●
Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
+0.1
1.3
-0.1
●
R
DS(ON)
＜
150mΩ (V
GS
=-2.5V)
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
G
1
+0.1
0.38
-0.1
1.Gate
2.Source
0-0.1
3
S
2
D
3.Drain
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current *1
Pulsed Drain Current *2
Power Dissipation
*1
Ta=25℃
Ta=70℃
Thermal Resistance.Junction- to-Ambient *1
*3
Junction Temperature
Storage Temperature Range
*1 Surface Mounted on FR4 Board, t
≤
5 sec.
*2 Pulse width limited by maximum junction temperature.
*3 Surface Mounted on FR4 Board.
Ta=25℃
Ta=70℃
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
T
J
T
stg
0.9
0.57
120
140
150
-55 to 150
-2.4
-1.9
-10
0.7
0.45
145
175
W
5 sec
-20
±8
-2.2
-1.8
A
Steady State
Unit
V
℃/W
℃
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1
SMD Type
P-Channel
MOSFET
SI2301BDS-HF
(KI2301BDS-HF)
■
Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
On state drain current *1
Forward Transconductance *1
Input Capacitance *2
Output Capacitance *2
Reverse Transfer Capacitance *2
Total Gate Charge *2
Gate Source Charge *2
Gate Drain Charge *2
Turn-On DelayTime *3
Turn-On Rise Time *3
Turn-Off DelayTime *3
Turn-Off Fall Time *3
Maximum Body-Diode Continuous Current
Diode Forward Voltage
Symbol
V
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(O
n
)
I
D(ON)
g
FS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
V
SD
5 sec
Steady State
I
S
=-0.75A,V
GS
=0V
V
GS
=-4.5V V
DS
=-6V, R
L
=6Ω,R
GEN
=6Ω
,
I
D
=-1.0A
V
GS
=-4.5V, V
DS
=-6V, I
D
=-2.8A
V
GS
=0V, V
DS
=-6V, f=1MHz
Test Conditions
I
D
=-250μA, V
GS
=0V
V
DS
=-20V, V
GS
=0V
V
DS
=-20V, V
GS
=0V, T
J
=55℃
V
DS
=0V, V
GS
=±8V
V
DS
=V
GS
I
D
=-250μA
V
GS
=-4.5V, I
D
=-2.8A
V
GS
=-2.5V, I
D
=-2.0A
V
GS
=-4.5V, V
DS
≤
-5V
V
GS
=-2.5V, V
DS
≤
-5V
V
DS
=-5V, I
D
=-2.8A
-6
-3
-0.45
Min
-20
MOSFET
Typ
Max
-1
-10
±100
-0.95
100
150
Unit
V
μA
nA
V
mΩ
A
6.5
375
95
65
4.5
0.7
1.1
20
40
30
20
30
60
45
30
-0.72
-0.6
-0.8
-1.2
10
S
pF
nC
ns
A
V
*1 Pulse test: PW
≤
300us duty cycle
≤
2%.
*2 For DESIGN AID ONLY, not subject to production testing.
*3 Switching time is essentially independent of operating temperature.
■
Marking
Marking
L1*
F
2
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SMD Type
P-Channel
MOSFET
SI2301BDS-HF
(KI2301BDS-HF)
■
Typical Characterisitics
10
MOSFET
Ou t p u t Ch ar ac t er i s t i c s
10
Tr an s f er Ch ar ac t er i s t i c s
T
C
= -55
。
C
8
I D - Drain Current (A)
V
GS
= 5 thru 2.5 V
I D - Drain Current (A)
8
2 V
25 C
6
6
125 C
4
1.5 V
2
1 V
0
0
1
2
3
4
5
V
DS
- Drain-to-Source Voltage (V)
4
2
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
- Gate-to-Source Voltage (V)
0.5
On-Resistance vs. Drain Current
800
Capacitance
)
0.4
C - Capacitance (pF)
600
r DS(on)- On-Resistance (
0.3
400
C
iss
0.2
V
GS
= 2.5 V
0.1
V
GS
= 4.5 V
0.0
0
2
4
6
8
10
I
D
- Drain Current (A)
200
C
oss
C
rss
0
4
8
12
16
20
0
V
DS
- Drain-to-Source Voltage (V)
5
V
DS
= 10 V
I
D
= 2.8 A
V GS - Gate-to-Source Voltage (V)
Gate Charge
1.6
On-Resistance vs. Junction Temperature
V
GS
= 4.5 V
I
D
= 2.8 A
3
r DS(on)- On-Resistance (
(Normalized)
0
1
2
3
4
5
)
4
1.4
1.2
2
1.0
1
0.8
0
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature ( C)
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3
SMD Type
P-Channel
MOSFET
SI2301BDS-HF
(KI2301BDS-HF)
■
Typical Characterisitics
Source-Drain Diode Forward Voltage
10
0.6
MOSFET
On-Resistance vs. Gate-to-Source Voltage
0.5
I S - Source Current (A)
r DS(on)- On-Resistance (
T
J
= 150 C
)
0.4
I
D
= 2.8 A
0.3
1
T
J
= 25 C
0.2
0.1
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
0.0
0
1
2
3
4
5
V
GS
- Gate-to-Source Voltage (V)
Threshold Voltage
0.4
10
Single Pulse Power
0.3
V GS(th)Variance (V)
8
0.2
I
D
= 250 A
0.1
Power (W)
6
4
T
A
= 25 C
0.0
2
.
- 0.1
- 0.2
- 50
0
- 25
0
25
50
75
100
125
150
0.01
0.1
1
10
100
1000
T
J
- Temperature (
C
)
100
Time (sec)
Safe Operating Area
I
D
- Drain Current (A)
10
10 s
100 s
1
1 ms
10 ms
T
A
= 25 C
Single Pulse
0.1
100 ms
dc, 100 s, 10 s, 1 s
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
Square Wave Pulse Duration (sec)
4
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SMD Type
P-Channel
MOSFET
SI2301BDS-HF
(KI2301BDS-HF)
■
Typical Characterisitics
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
MOSFET
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
Notes:
0.1
0.1
0.05
0.02
P
DM
t
1
t
2
t
1
1. Duty Cycle, D =
t
2
2. Per Unit Base = R
thJA
= 62.5 C/W
3. T - T
A
= P
DM
Z
thJA(t)
JM
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
4. Surface Mounted
10
100
600
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