SMD Type
P-Channel
MOSFET
SI4463BDY-HF
(KI4463BDY-HF)
SOP-8
MOSFET
■
Features
●
V
DS (V)
=-20V
●
I
D
=-13.7 A (V
GS
=-10V)
●
R
DS(ON)
＜
11mΩ (V
GS
=-10V)
●
R
DS(ON)
＜
20mΩ (V
GS
=-2.5V)
●
Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
S
0.21
-0.02
1.50
0.15
+0.04
●
R
DS(ON)
＜
14mΩ (V
GS
=-4.5V)
1
2
3
4
Source
Source
Source
Gate
5
6
7
8
Drain
Drain
Drain
Drain
G
D
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Ta = 25℃
Ta = 70℃
Ta = 25℃
Ta = 70℃
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
R
thJF
T
J
T
stg
3
1.9
42
-
150
-55 to 150
-13.7
-11.1
-50
1.5
0.95
84
21
℃/W
W
10 Secs
-20
±12
-9.8
-7.9
A
Steady State
Unit
V
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Foot
Junction Temperature
Junction Storage Temperature Range
℃
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SMD Type
P-Channel
MOSFET
SI4463BDY-HF
(KI4463BDY-HF)
■
Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note.1)
On state drain current
Forward Transconductance
Gate resistance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Maximum Body-Diode Continuous Current
Diode Forward Voltage
Symbol
V
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(O
n
)
I
D(ON)
g
FS
R
g
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
S
V
SD
I
S
=-2.7A,V
GS
=0V (Note.1)
I
F
=-2.3A, d
I
/d
t
=100A/μs
V
DD
=
−10
V, R
L
= 10
Ω
I
D
=−1 A, V
GEN
=
−4.5
V, Rg = 6
Ω
V
GS
=-4.5V, V
DS
=-10V, I
D
=-13.7A
Test Conditions
I
D
=-250μA, V
GS
=0V
V
DS
=-20V, V
GS
=0V
V
DS
=-20V, V
GS
=0V, T
J
=70℃
V
DS
=0V, V
GS
=±12V
V
DS
=V
GS
I
D
=-250μA
V
GS
=-10V, I
D
=-13.7A
V
GS
=-4.5V, I
D
=-12.3A
V
GS
=-2.5V, I
D
=-5A
V
GS
=-5V, V
DS
=-4.5V (Note.1)
V
DS
=-10V, I
D
=-13.7A (Note.1)
V
GS
=0V, V
DS
=0V, f=1MHz
-30
Min
-20
MOSFET
Typ
Max
-1
-10
±100
Unit
V
uA
nA
V
mΩ
A
-0.6
-1.4
11
14
20
44
2.7
37
8.7
11
55
90
170
115
75
-2.7
-1.1
56
S
Ω
nC
ns
A
V
Note.1: Pulse test; pulse width
≤
300us, duty cycle
≤
2%.
■
Marking
Marking
4463B
KC****
F
2
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SMD Type
P-Channel
MOSFET
SI4463BDY-HF
(KI4463BDY-HF)
■
Typical Characterisitics
Ou t p u t Ch ar ac t er i s t i c s
50
V
GS
= 10 thru 2.5 V
40
I
D
−
Drain Current (A)
I
D
−
Drain Current (A)
40
50
MOSFET
Tr an s f er Ch ar ac t er i s t i c s
30
2 V
20
30
20
T
C
= 125 C
10
25 C
0
0.0
−55
C
0.5
1.0
1.5
2.0
2.5
10
1.5 V
0
0
1
2
3
4
5
V
DS
−
Drain-to-Source Voltage (V)
V
GS
−
Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.04
)
5000
Capacitance
r
DS(on)
−
On-Resistance (
0.03
C
−
Capacitance (pF)
4000
C
iss
3000
0.02
V
GS
= 2.5 V
V
GS
= 4.5 V
0.01
2000
C
oss
1000
V
GS
= 10 V
0.00
0
10
20
30
40
50
0
0
C
rss
4
8
12
16
20
I
D
−
Drain Current (A)
V
DS
−
Drain-to-Source Voltage (V)
Gate Charge
5
V
GS
−
Gate-to-Source Voltage (V)
V
DS
= 10 V
I
D
= 13.7 A
4
r
DS(on)
−
On-Resiistance
(Normalized)
1.4
On-Resistance vs. Junction T emperature
V
GS
= 10 V
I
D
= 13.7 A
1.3
1.2
3
1.1
2
1.0
1
0.9
0
0
5
10
15
20
25
30
35
40
Q
g
−
Total Gate Charge (nC)
0.8
−50
−25
0
25
50
75
100
125
150
T
J
−
Junction Temperature (
C)
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SMD Type
P-Channel
MOSFET
SI4463BDY-HF
(KI4463BDY-HF)
■
Typical Characterisitics
Source-Drain Diode Forward V oltage
50
0.05
I
D
= 5 A
0.04
I = 13.7 A
D
0.03
)
MOSFET
On-Resistance vs. Gate-to-Source
Voltage
I
S
−
Source Current (A)
T
J
= 150 C
10
r
DS(on)
−
On-Resistance (
0.02
T
J
= 25 C
0.01
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
6
7
8
V
SD
−
Source-to-Drain Voltage (V)
V
GS
−
Gate-to-Source Voltage (V)
Threshold V oltage
0.6
50
Single Pulse Power, Junction-to-Ambient
0.4
V
GS(th)
Variance (V)
I
D
= 250 A
Power (W)
0.2
40
30
0.0
20
−0.2
10
−0.4
−50
.
−25
0
25
50
75
100
125
150
0
0.01
0.1
1
Time (sec)
10
100
600
T
J
−
Temperature ( C)
100
r
DS(on)
Limited
10
I
D
−
Drain Current (A)
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
0.1
T
C
= 25 C
Single Pulse
BV
DSS
Limited
0.01
0.1
1
10
100
V
DS
−
Drain-to-Source Voltage (V)
P(t) = 10
dc
Safe Operating Area
I Limited
DM
1
I
D(on)
Limited
4
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SMD Type
P-Channel
MOSFET
SI4463BDY-HF
(KI4463BDY-HF)
■
Typical Characterisitics
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
MOSFET
0.2
0.1
0.1
0.05
t
1
Notes:
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 70 C/W
t
1
t
2
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
1
Square Wave Pulse Duration (sec)
3. T
JM
−
T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
Square Wave Pulse Duration (sec)
1
10
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