SMD Type
P-Channel
MOSFET
SI2341DS-HF
(KI2341DS-HF)
SOT-23
MOSFET
Unit: mm
+0.1
2.9
-0.1
+0.1
0.4
-0.1
■
Features
●
V
DS (V)
=-30V
+0.1
2.4
-0.1
●
R
DS(ON)
＜
72mΩ (V
GS
=-10V)
●
R
DS(ON)
＜
120mΩ (V
GS
=-4.5V)
●
Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
+0.1
1.3
-0.1
●
I
D
=-2.8A (V
GS
=-10V)
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1.Gate
2.Source
+0.1
0.38
-0.1
0-0.1
G
1
3
D
3.Drain
S
2
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation *1
Thermal Resistance.Junction- to-Ambient *1
Thermal Resistance.Junction- to-Ambient *2
Thermal Resistance.Junction- to-Foot
Junction Temperature
Storage Temperature Range
Ta = 25℃
Ta = 70℃
*1
Ta = 25℃
Ta = 70℃
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
R
thJF
T
J
T
stg
0.9
0.57
140
175
75
150
-55 to 150
℃
℃/W
-2.8
-2.2
-12
0.71
0.45
W
5 sec
-30
±20
-2.5
-2.0
A
Steady State
Unit
V
*1 Surface Mounted on FR4 Board, t
≤
5 sec.
*2 Surface Mounted on FR4 Board.
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SMD Type
P-Channel
MOSFET
SI2341DS-HF
(KI2341DS-HF)
■
Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance *1
On state drain current *1
Forward Transconductance *1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Maximum Body-Diode Continuous Current
Diode Forward Voltage
Symbol
V
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(O
n
)
I
D(ON)
g
FS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
V
SD
5 sec
Steady State
I
S
=-0.75A,V
GS
=0V
V
GS
=-4.5V, V
DS
=-15V, R
L
=15Ω,R
GEN
=6Ω
I
D
=-1.0 A
V
GS
=-10V, V
DS
=-15V, I
D
=-2.8A
V
GS
=0V, V
DS
=-15V, f=1MHz
Test Conditions
I
D
=-250μA, V
GS
=0V
V
DS
=-24V, V
GS
=0V
V
DS
=-24V, V
GS
=0V, T
J
=55℃
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS
I
D
=-250μA
V
GS
=-10V, I
D
=-2.8A
V
GS
=-4.5 V, I
D
=-2.0A
V
GS
=-10V, V
DS
=-5V
V
DS
=-5V, I
D
=-2.8A
-6
-1
Min
-30
MOSFET
Typ
Max
-1
-10
±100
-3
72
120
Unit
V
μA
nA
V
mΩ
A
8.0
400
95
70
9.5
1.5
2.5
7
15
20
20
15
25
30
30
-0.75
-0.6
-0.8
-1.2
15
S
pF
nC
ns
A
V
*1Pulse test: PW
≤
300us duty cycle
≤
2%.
■
Marking
Marking
F1*
F
2
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SMD Type
P-Channel
MOSFET
SI2341DS-HF
(KI2341DS-HF)
■
Typical Characterisitics
12
10
I D - Drain Current (A)
8
6
3V
4
2
0
0
2
4
6
8
V
DS
- Drain-to-Source Voltage (V)
2V
10
MOSFET
Output Characteristics
V
GS
= 10 thru 5 V
12
10
Transfer Characteristics
T
C
= - 55 C
25 C
I D - Drain Current (A)
8
6
4
2
0
0.0
125 C
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
GS
- Gate-to-Source Voltage (V)
0.15
On-Resistance vs. Drain Current
700
600
C - Capacitance (pF)
500
400
300
200
100
C
rss
0
Capacitance
0.12
V
GS
= 4.5 V
r DS(on)- On-Resistance (
)
0.09
C
iss
V
GS
= 10 V
0.06
0.03
C
oss
0.00
0
2
4
6
8
10
I
D
- Drain Current (A)
0
5
10
15
20
25
30
V
DS
- Drain-to-Source Voltage (V)
10
V
DS
= 15 V
I
D
= 3 A
V GS - Gate-to-Source Voltage (V)
Gate Charge
1.6
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 3 A
6
r DS(on)- On-Resistance (
(Normalized)
0
2
4
6
8
10
)
8
1.4
1.2
4
1.0
2
0.8
0
Q
g
- Total Gate Charge (nC)
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature ( C)
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SMD Type
P-Channel
MOSFET
SI2341DS-HF
(KI2341DS-HF)
■
Typical Characterisitics
20
10
0.8
I S - Source Current (A)
)
MOSFET
Source-Drain Diode Forward Voltage
1.0
On-Resistance vs. Gate-to-Source Voltage
T
J
= 150 C
r DS(on)- On-Resistance (
0.6
I
D
= 3 A
0.4
1
T
J
= 25 C
0.2
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
0.0
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
0.6
Threshold Voltage
10
Single Pulse Power
0.4
V GS(th) Variance (V)
8
I
D
= 250 A
Power (W)
0.2
6
0.0
4
T
A
= 25 C
Single Pulse
- 0.2
.
2
- 0.4
- 50
0
150
0.01
0.1
1
10
100
1000
Time (sec)
- 25
0
25
50
75
100
125
T
J
- Temperature ( C)
100.0
Safe Operating Area, Junction-to-Case
Limited
by r
DS(on)
10.0
I
D
- Drain Current (A)
10 s
100 s
1.0
1 ms
10 ms
0.1
T
A
= 25 C
Single Pulse
0.01
0.1
1
10
100 ms
dc, 100 s, 10 s, 1 s
100
V
DS
- Drain-to-Source Voltage (V)
Square Wave Pulse Duration (sec)
4
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SMD Type
P-Channel
MOSFET
SI2341DS-HF
(KI2341DS-HF)
■
Typical Characterisitics
Normalized Thermal Transient Impedance, Junction-to-Ambient
MOSFET
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Notes:
P
DM
t
1
0.1
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 62.5 C/W
t
1
t
2
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
Square Wave Pulse Duration (sec)
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