SMD Type
P-Channel Enhancement
MOSFET
SI2335DS
(KI2335DS)
SOT-23-3
MOSFET
Unit: mm
+0.2
2.9
-0.1
+0.1
0.4
-0.1
■
Features
●
V
DS (V)
=-12V
+0.2
2.8
-0.1
3
●
R
DS(ON)
＜
51mΩ (V
GS
=-4.5V)
●
R
DS(ON)
＜
70mΩ (V
GS
=-2.5V)
●
R
DS(ON)
＜
106mΩ (V
GS
=-1.8V)
G
1
3
S
2
D
+0.2
1.6
-0.1
●
I
D
=-4.0A (V
GS
=-4.5V)
1
+0.1
0.95
-0.1
+0.1
1.9
-0.2
2
0.55
0.4
+0.02
0.15
-0.02
+0.2
1.1
-0.1
1. Gate
+0.1
0.68
-0.1
0-0.1
2. Source
3. Drain
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(T
J
= 150℃) *1
Pulsed Drain Current
Power Dissipation
Ta = 25℃
Ta = 70℃
Thermal Resistance.Junction- to-Ambient t≤5 sec
Steady State
Thermal Resistance.Junction- to-Foot
Junction Temperature
Storage Temperature Range
*1 Surface Mounted on 1” x 1” FR4 Board.
Ta = 25℃
Ta = 70℃
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
R
thJF
T
J
T
stg
1.25
0.8
100
166
50
150
-55 to 150
℃
℃/W
-4.0
-3.3
-15
0.75
0.48
W
5 sec
-12
±8
-3.2
-2.6
A
Steady State
Unit
V
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1
SMD Type
P-Channel Enhancement
MOSFET
SI2335DS
(KI2335DS)
■
Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance *1
Symbol
V
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(O
n
)
Test Conditions
I
D
=-250μA, V
GS
=0V
V
DS
=-9.6V, V
GS
=0V
V
DS
=-9.6V, V
GS
=0V, T
J
=55℃
V
DS
=0V, V
GS
=±8V
V
DS
=V
GS
I
D
=-250μA
V
GS
=-4.5V, I
D
=-4.0A
V
GS
=-2.5V, I
D
=-3.5A
V
GS
=-1.8V, I
D
=-2A
On state drain current *1
Forward Transconductance *1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Maximum Body-Diode Continuous Current
Diode Forward Voltage
I
D(ON)
g
FS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
V
SD
I
S
=-1.6A,V
GS
=0V
V
GS
=-4.5V, V
DS
=-6V, R
L
=6Ω,R
GEN
=6Ω
I
D
=-1.0A
V
GS
=-4.5V, V
DS
=-6V, I
D
=-4.0A
V
GS
=0V, V
DS
=-6V, f=1MHz
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-2.5V, V
DS
=-5V
V
DS
=-5V, I
D
=-4.0A
-15
-6
-0.45
Min
-12
MOSFET
Typ
Max
-1
-10
±100
-1.0
Unit
V
μA
nA
V
mΩ
45
58
82
51
70
106
A
7
1225
260
130
9
1.9
1.5
13
15
50
19
20
25
70
35
-1.6
-1.2
15
S
pF
nC
ns
A
V
*1Pulse test: PW
≤
300us duty cycle
≤
2%.
■
Marking
Marking
E5*
2
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SMD Type
P-Channel Enhancement
MOSFET
SI2335DS
(KI2335DS)
■
Typical Characterisitics
15
MOSFET
Output Characteristics
V
GS
= 4.5 thru 2.5 V
15
Transfer Characteristics
12
I
D
– Drain Current (A)
2V
I
D
– Drain Current (A)
12
T
C
= –55 C
25 C
9
9
125 C
6
6
3
1.5 V
1, 0.5 V
3
0
0
2
4
6
8
10
V
DS
– Drain-to-Source Voltage (V)
0
0.0
0.5
1.0
1.5
2.0
2.5
V
GS
– Gate-to-Source Voltage (V)
0.30
0.25
On-Resistance vs. Drain Current
2000
Capacitance
)
r
DS(on)
– On-Resistance (
C – Capacitance (pF)
1500
0.20
V
GS
= 1.8 V
0.15
0.10
0.05
V
GS
= 4.5 V
0.00
0
3
6
9
12
15
V
GS
= 2.5 V
C
iss
1000
500
C
oss
C
rss
0
3
6
9
12
0
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
8
V
GS
– Gate-to-Source Voltage (V)
V
DS
= 6 V
I
D
= 4.0 A
6
Gate Charge
1.6
On-Resistance vs. Junction Temperature
V
GS
= 4.5 V
I
D
= 4.0 A
r
DS(on)
– On-Resistance ( )
(Normalized)
10
15
20
1.4
1.2
4
1.0
2
0.8
0
0
5
Q
g
– Total Gate Charge (nC)
0.6
–50
–25
0
25
50
75
100
125
150
T
J
– Junction Temperature ( C)
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3
SMD Type
P-Channel Enhancement
MOSFET
SI2335DS
(KI2335DS)
■
Typical Characterisitics
20
10
0.4
I
D
= 4.0 A
0.3
)
MOSFET
Source-Drain Diode Forward Voltage
0.5
On-Resistance vs. Gate-to-Source Voltage
I
S
– Source Current (A)
T
J
= 150 C
T
J
= 25 C
1
r
DS(on)
– On-Resistance (
0.2
0.1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
– Source-to-Drain Voltage (V)
0.0
0
2
4
6
8
V
GS
– Gate-to-Source Voltage (V)
0.4
0.3
V
GS(th)
Variance (V)
0.2
Threshold Voltage
12
I
D
= 250 A
10
Single Pulse Power
8
Power (W)
6
4
T
A
= 25 C
2
.
0.1
0.0
–0.1
–0.2
–50
–25
0
25
50
75
100
125
150
0
0.01
0.1
1
Time (sec)
10
100
600
T
J
– Temperature ( C)
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Normalized Thermal Transient Impedance, Junction-to-Ambient
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
2. Per Unit Base = R
thJA
= 120 C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
10
100
600
Square Wave Pulse Duration (sec)
4
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