SMD Type
P-Channel
MOSFET
SI9435BDY-HF
(KI9435BDY-HF)
MOSFET
IC
■
Features
●
V
DSS
= -30V
●
I
D
= -5.7A (V
GS
= -10V)
SOP-8
●
R
DS(ON)
= 42 mΩ
@ V
GS
= -10 V
●
R
DS(ON)
= 70 mΩ
@ V
GS
= -4.5 V
0.21
-0.02
+0.04
1.50
0.15
●
Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
S
G
S
S
S
G
D
P-Channel MOSFET
1
2
3
4
8
7
6
5
D
D
D
D
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source
Voltage
Gate-Source
Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Case
Junction Temperature
Storage Temperature Range
TA=25℃ *1
TA=70℃ *2
TA=25℃
TA=70℃
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
R
thJC
T
J
T
stg
Rating
-30
±20
-5.7
-4.6
-30
2.5
1.6
50
25
150
-55 to 150
W
A
Unit
V
℃/W
℃
*1 50℃/W when mounted on a 1 in2 pad of 2 oz copper
*2 105℃/W when mounted on a .04 pad of 2 oz copper
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1
SMD Type
P-Channel
MOSFET
SI9435BDY-HF
(KI9435BDY-HF)
IC
MOSFET
■
Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate Threshold Voltage
Static Drain-Source
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source
Diode Forward Current
Drain–Source Diode Forward Voltage
Symbol
B
VDSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
I
D(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
V
GS
= 0 V, I
S
=-2.3 A *
-0.8
V
DS
=-15 V, I
D
=-3.5 A,
V
GS
= -10 V *
V
DD
=-15 V, I
D
= -1 A,
V
GS
= -10 V, R
GEN
= 6
Ω
*
Testconditions
V
GS
= 0 V, I
D
= -250 µA
V
DS
=-30 V, V
GS
= 0 V
V
GS
=
±20
V, V
DS
= 0 V
V
DS
= V
GS
, I
D
=-250 μA
V
GS
=-10 V, I
D
= -5.7 A
V
GS
= -6 V, I
D
= -5 A
V
GS
= -4.5 V, I
D
=-4.4A,
V
GS
= -10 V, V
DS
= -5 V
V
DS
= -15 V, I
D
= -5.7 A
V
DS
=-15 V, V
GS
= 0 V,
f = 1.0 MHz
-20
13
690
306
77
14
14
42
30
Min
-30
Typ
Max
-1
±100
Unit
V
μA
nA
V
mΩ
A
S
pF
pF
pF
-1
-3
42
55
70
25
25
70
50
24
ns
ns
ns
ns
nC
nC
nC
16
2.3
4.5
-5.7
-1.1
A
V
* Pulse Test: Pulse Width
＜300
u s, Duty Cycle
＜
2.0%
■
Marking
Marking
9435B
KC****
F
2
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SMD Type
P-Channel
MOSFET
SI9435BDY-HF
(KI9435BDY-HF)
30
5 V
25
25
Drain Current (A)
Drain Current (A)
20
MOSFET
IC
■
Typical Characterisitics
30
V
Output Characteristics
Transfer Characteristics
20
V
GS
= 10 thru 6
15
4 V
15
10
I
D
10
T
C
= 125 C
5
5
3 V
0
0
0
1
2
3
4
5
V
DS
-Drain-to-Source Voltage (V)
0
1
V
GS
2
3
4
5
25 C
-55 C
I
D
Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.15
)
Capacitance (pF)
Capacitance
1100
On-Resistance(
0.12
880
C
iss
660
0.09
V
GS
= 4.5 V
0.06
V
GS
= 6 V
0.03
440
C
C
oss
220
V
GS
= 10 V
0
C
rss
0
5
V
DS
10
15
20
25
30
r
DS(on)
0.00
0
4
8
12
16
20
I
D
-Drain Current (A)
Drain-to-Source Voltage (V)
Gate Charge
10
Gate-to-Source Voltage (V)
V
DS
= 15 V
I
D
= 3.5 A
8
r
DS(on)
On-Resiistance
(Normalized)
On-Resistance vs. Junction Temperature
1.6
V
GS
= 10 V
I
D
= 5.7 A
1.4
6
1.2
4
1.0
V
GS
2
0.8
0
0.0
0.6
3.2
6.4
9.6
12.8
16.0
-50
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature
（℃）
Q g - Total Gate Charge (nC)
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3
SMD Type
P-Channel
MOSFET
SI9435BDY-HF
(KI9435BDY-HF)
■
Typical Characterisitics
Source-Drain Diode Forward Voltage
50
0.20
MOSFET
IC
On-Resistance vs. Gate-to-Source Voltage
On-Resistance( )
Source Current (A)
0.16
T
J
= 150 C
10
T
J
= 25 C
0.12
I
D
= 5.7 A
0.08
r
DS(on)
1
0.0
I
S
0.04
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
Source-to-Drain Voltage(V)
V
GS
Gate-to-Source Voltage (V)
Threshold Voltage
0.6
150
Single Pulse Power, Junction-to-Ambient
0.4
V
GS(th)
Variance (V)
I
D
= 250 A
0.2
Power (W)
120
90
0.0
60
-0.2
30
-0.4
-50
25
0
25
50
75
100
125
150
0
10
-3
10
-2
10
-1
Time (sec)
1
10
Tj Temperature (℃)
100
Safe Operating Area, Junction-to-Foot
*Limited by
DS
r
(on)
Drain Current (A)
10
1 ms
1
10 ms
100 ms
1 s
10 s
dc
I
D
0.1
T
C
=25 C
Single Pulse
0.01
0.1
*V
GS
1
10
100
V
DS
Drain-to-Source Voltage (V)
minimum V
GS
at which r
DS(on)
isspecified
4
www.kexin.com.cn
SMD Type
P-Channel
MOSFET
SI9435BDY-HF
(KI9435BDY-HF)
■
Typical Characterisitics
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
MOSFET
IC
0.2
0.1
0.1
0.05
t
1
Notes:
P
DM
0.02
t
2
t
1
1. Duty Cycle, D =
t
2
2. Per Unit Base =R
thJA
= 70 C/W
3. T
JM
T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
Square Wave Pulse Duration (sec)
10
100
600
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
Square Wave Pulse Duration (sec)
1
10
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