SMD Type
Complementary power Trench MOSFET
MOSFET
SI5504DC
(KI5504DC)
1206-8 chipFET (Chip-8)
■
Features
●
N-Channel：V
DS
=30V I
D
= 3.9A
●
●
R
DS(ON)
＜
85mΩ (V
GS
= 10V)
R
DS(ON)
＜
143mΩ (V
GS
= 4.5 V)
R
DS(ON)
＜
165mΩ (V
GS
=-10V)
R
DS(ON)
＜
290mΩ (V
GS
=-4.5V)
D
1
S
2
●
P-Channel：V
DS
=-30V I
D
=- 2.8A
●
●
G
2
G
1
S
1
D
2
N-Channel MOSFET
P-Channel MOSFET
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Ta = 25℃
Ta = 85℃
Thermal Resistance.Junction- to-Ambient (Note.1)
Thermal Resistance.Junction- to-Case
Junction Temperature
Storage Temperature Range
Note.1: Surface Mounted on 1” x 1” FR4 Board.
Ta = 25℃
Ta = 85℃
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
R
thJC
T
J
T
stg
2.1
1.1
60
-
1.1
0.6
110
40
150
-55 to 150
3.9
2.8
2.9
2.1
±10
2.1
1.1
60
-
1.1
0.6
110
40
W
N-Channel
5 Secs
Steady State
30
±20
- 2.8
-2
- 2.1
-1.5
A
P-Channel
5 Secs
Steady State
-30
V
Unit
℃/W
℃
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1
SMD Type
Complementary power Trench MOSFET
■
Electrical Characteristics Ta = 25
℃
Parameter
Drain-Source Breakdown Voltage
MOSFET
SI5504DC
Symbol
V
DSS
(KI5504DC)
Test Conditions
Type
N-CH
P-CH
N-CH
P-CH
N-CH
P-CH
N-CH
P-CH
N-CH
P-CH
N-CH
P-CH
N-CH
P-CH
N-CH
P-CH
N-CH
P-CH
N-CH
P-CH
N-CH
P-CH
N-CH
10
-10
6
3
5
5.5
0.8
1.2
1
0.9
7
8
12
11
12
14
7
8
40
40
11
12
18
18
18
21
11
12
80
80
0.9
-0.9
0.8
-0.8
1.2
-1.2
V
A
ns
7.5
6.6
nC
1
-1
72
120
137
240
85
143
165
290
A
S
mΩ
Min
30
-30
1
-1
5
-5
±100
nA
V
μA
Typ
Max
Unit
V
I
D
=250μA, V
GS
=0V
I
D
=-250μA, V
GS
=0V
V
DS
=24V, V
GS
=0V
V
DS
=-24V, V
GS
=0V
V
DS
=24V, V
GS
=0V ,T
J
= 85℃
V
DS
=-24V, V
GS
=0V ,T
J
= 85℃
Zero Gate Voltage Drain Current
I
DSS
Gate-Body Leakage Current
Gate Threshold Voltage
I
GSS
V
GS(th)
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS
, I
D
=250μA
V
DS
=V
GS,
I
D
=-250μA
V
GS
=10V, I
D
=2.9A
V
GS
=4.5V, I
D
=2.2A
V
GS
=-10V, I
D
=-2.1A
V
GS
=-4.5V, I
D
=-1.6A
V
DS
= 5 V, V
GS
= 10 V
V
DS
= -5 V, V
GS
= -10 V
V
DS
=15V, I
D
=2.9A
V
DS
=-15V, I
D
=-2.1A
N-Channel:
V
GS
=10V, V
DS
=15V, I
D
=2.9A
P-Channel:
V
GS
=-10V, V
DS
=-15V, I
D
=-2.1A
Static Drain-Source On-Resistance
(Note.1)
R
DS(O
n
)
On-State Drain Current
(Note.1)
I
D(on)
g
FS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
S
V
SD
Forward Transconductance (Note.1)
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Maximum Body-Diode Continuous Current
Diode Forward Voltage
N-Channel:
V
GS
=10V, V
DS
=15V, I
D
=1A, R
G
=6Ω
R
L
=15
Ω
P-Channel:
V
GS
=-10V, V
DS
=-15V, I
D
=-1A, R
G
=6Ω
R
L
=15
Ω
I
F
=0.9A, d
I
/d
t
=100A/μs
I
F
=-0.9A, d
I
/d
t
=100A/μs
P-CH
N-CH
P-CH
N-CH
P-CH
N-CH
P-CH
N-CH
P-CH
N-CH
P-CH
I
S
=0.9A,V
GS
=0V
I
S
=-0.9A,V
GS
=0V
N-CH
P-CH
Note.1: Pulse test; pulse width
≤
300 s, duty cycle
≤
2%,
■
Marking
Marking
EA**
2
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SMD Type
Complementary power Trench MOSFET
■
Typical Characterisitics
10
V
GS
= 10 thru 5 V
8
I D - Drain Current (A)
I D - Drain Current (A)
8
MOSFET
SI5504DC
(KI5504DC)
Transfer Characteristics
Output Characteristics
N-MOSFET Characteristic curve
10
6
4V
6
4
4
T
C
= -125 C
2
25 C
-55 C
2
3V
0
0.0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
1
2
3
4
5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
400
0.20
On-Resistance vs. Drain Current
Capacitance
C
iss
C - Capacitance (pF)
0.15
300
r DS(on)- On-Resistance (
)
V
GS
= 4.5 V
0.10
V
GS
= 10 V
200
0.05
100
C
oss
0.00
0
2
4
6
8
10
I
D
- Drain Current (A)
0
0
C
rss
6
12
18
24
30
V
DS
- Drain-to-Source Voltage (V)
10
Gate Charge
1.8
1.6
r DS(on)- On-Resistance (
(Normalized)
)
1.4
1.2
1.0
0.8
0.6
-50
On-Resistance vs. Junction Temperature
V GS - Gate-to-Source Voltage (V)
8
V
DS
= 15 V
I
D
= 2.9 A
V
GS
= 10 V
I
D
= 2.9 A
6
4
2
0
0
1
2
3
4
5
Q
g
- Total Gate Charge (nC)
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature ( C)
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3
SMD Type
Complementary power Trench MOSFET
MOSFET
SI5504DC
(KI5504DC)
0.20
■
Typical Characterisitics
10
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
)
I
S
- Source Current (A)
T
J
= 150 C
r
DS(on)
- On-Resistance (
0.15
I
D
= 2.9 A
0.10
0.05
T
J
= 25 C
1
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
0.00
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
0.4
0.2
V
GS(th)
Variance (V)
-0.0
-0.2
-0.4
-0.6
Threshold Voltage
50
I
D
= 250 A
Single Pulse Power
40
Power (W)
30
20
10
.
-0.8
-50
-25
0
25
50
75
100
125
150
0
10
- 4
10
- 3
10
- 2
10
- 1
Time (sec)
1
10
100
600
T
J
- Temperature ( C)
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Normalized Thermal Transient Impedance, Junction-to-Ambient
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 90 C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
Single Pulse
0.01
10
- 4
10
- 3
10
- 2
10
- 1
1
10
100
600
Square Wave Pulse Duration (sec)
4
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SMD Type
Complementary power Trench MOSFET
MOSFET
SI5504DC
(KI5504DC)
■
Typical Characterisitics
2
1
Normalized Thermal Transient Impedance, Junction-to-Foot
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
- 4
10
- 3
10
- 2
10
- 1
Square Wave Pulse Duration (sec)
1
10
P-MOSFET Characteristic curve
10
Output Characteristics
V
GS
= 10 thru 7 V
6V
5V
I D - Drain Current (A)
10
Transfer Characteristics
T
C
= -55 C
25 C
8
I D - Drain Current (A)
8
6
6
125 C
4
4V
4
2
3V
0
0.0
2
0
0.5
1.0
1.5
2.0
2.5
3.0
0
1
2
3
4
5
6
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
400
0.4
On-Resistance vs. Drain Current
Capacitance
V
GS
= 4.5 V
)
r DS(on)- On-Resistance (
C - Capacitance (pF)
0.3
320
C
iss
240
0.2
V
GS
= 10 V
0.1
160
C
oss
80
C
rss
0
6
0.0
0
2
4
6
8
10
I
D
- Drain Current (A)
0
12
18
24
30
V
DS
- Drain-to-Source Voltage (V)
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